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    Cutting element assembly including one or more superabrasive cutting elements, drill bit utilizing the same, and methods of manufacture
    21.
    发明授权
    Cutting element assembly including one or more superabrasive cutting elements, drill bit utilizing the same, and methods of manufacture 有权
    包括一个或多个超级磨料切割元件的切割元件组件，利用其的钻头以及制造方法

    公开(公告)号：US08479845B1

    公开(公告)日：2013-07-09

    申请号：US12853752

    申请日：2010-08-10

    Applicant: Jiang Qian ,  Debkumar Mukhopadhyay ,  Jason Wiggins ,  Kenneth E. Bertagnolli ,  Shawn C. Scott ,  Kevin Duy Nguyen ,  Michael A. Vail

    Inventor： Jiang Qian ,  Debkumar Mukhopadhyay ,  Jason Wiggins ,  Kenneth E. Bertagnolli ,  Shawn C. Scott ,  Kevin Duy Nguyen ,  Michael A. Vail

    IPC: E21B10/42

    CPC classification number: E21B10/56 ,  E21B10/43 ,  E21B10/52 ,  E21B10/567 ,  E21B10/633

    Abstract: Some embodiments relate to cutting element assemblies including a superabrasive cutting element that may be axially compressed to enhance the damage tolerance thereof, enclosed in an enclosure that exposes the superabrasive cutting element therethrough, enclosed in an enclosure that restricts rotation of the superabrasive cutting element, or combinations of the foregoing. Additionally, some embodiments relate to cutting element assemblies in which a superabrasive cutting element is mechanically fastened to a base, such as a substrate or directly to a bit body of a rotary drill bit. Some embodiments also relate to cutting element assemblies including one or more superabrasive cutting elements that are rotatable about a longitudinal axis of the cutting element assembly, that may be axially compressed to enhance the damage tolerance thereof, that may be enclosed in an enclosure that exposes the superabrasive cutting element therethrough, or combinations thereof.

    Abstract translation: 一些实施例涉及切割元件组件，其包括可以被轴向压缩以增强其破坏公差的超研磨切割元件，其包围在限制超研磨切割元件的旋转的外壳中的外罩中，该外壳将露出超硬磨料切割元件， 上述的组合。 另外，一些实施例涉及切割元件组件，其中超研磨切割元件机械地紧固到基座，例如基底或直接连接到旋转钻头的钻头体。 一些实施例还涉及切割元件组件，其包括可围绕切割元件组件的纵向轴线旋转的一个或多个超级研磨切割元件，其可以被轴向压缩以增强其损伤容限，其可以封闭在暴露于 超研磨切割元件或其组合。

    POLYCRYSTALLINE DIAMOND COMPACT INCLUDING A CARBONATE-CATALYZED POLYCRYSTALLINE DIAMOND TABLE AND APPLICATIONS THEREFOR
    27.
    发明申请
    POLYCRYSTALLINE DIAMOND COMPACT INCLUDING A CARBONATE-CATALYZED POLYCRYSTALLINE DIAMOND TABLE AND APPLICATIONS THEREFOR 有权
    多晶金刚石，包括碳酸钙催化的多晶金刚石表及其应用

    公开(公告)号：US20130043078A1

    公开(公告)日：2013-02-21

    申请号：US13552052

    申请日：2012-07-18

    Applicant: Jiang Qian ,  C. Eugene McMurray ,  Debkumar Mukhopadhyay ,  Jason K. Wiggins ,  Michael A. Vail ,  Kenneth E. Bertagnolli

    Inventor： Jiang Qian ,  C. Eugene McMurray ,  Debkumar Mukhopadhyay ,  Jason K. Wiggins ,  Michael A. Vail ,  Kenneth E. Bertagnolli

    IPC: B24D3/06 ,  B23B51/00 ,  E21B10/46 ,  B24D18/00

    CPC classification number: B24D3/10 ,  B22F7/062 ,  B22F2005/001 ,  B24D18/0009 ,  C22C26/00 ,  E21B10/54 ,  E21B10/56 ,  E21B10/567 ,  F16C33/043 ,  F16C33/108 ,  F16C2352/00 ,  Y10T408/89

    Abstract: In an embodiment, a polycrystalline diamond compact includes a substrate and a preformed polycrystalline diamond table bonded to the substrate. The table includes bonded diamond grains defining interstitial regions. The table includes an upper surface, a back surface bonded to the substrate, and at least one lateral surface extending therebetween. The table includes a first region extending inwardly from the upper surface and the lateral surface. The first region exhibits a first interstitial region concentration and includes at least one interstitial constituent disposed therein, which may be present in at least a residual amount and includes at least one metal carbonate and/or at least one metal oxide. The table includes a second bonding region adjacent to the substrate that extends inwardly from the back surface. The second bonding region exhibits a second interstitial region concentration that is greater than the first interstitial region concentration and includes a metallic infiltrant therein.

    Abstract translation: 在一个实施例中，多晶金刚石致密体包括基底和结合到基底的预成型多晶金刚石台。 该表包括定义间隙区域的结合金刚石颗粒。 桌子包括上表面，粘合到基底的后表面和在它们之间延伸的至少一个侧表面。 桌子包括从上表面和侧表面向内延伸的第一区域。 第一区域表现出第一间隙区域浓度并且包括至少一个置于其中的间隙成分，其可以以至少残留量存在并且包括至少一种金属碳酸盐和/或至少一种金属氧化物。 桌子包括与衬底相邻的第二接合区域，其从后表面向内延伸。 第二结合区域表现出比第一间隙区域浓度大的第二间隙区域浓度，并且其中包括金属渗透剂。

    METHOD OF PARTIALLY INFILTRATING AN AT LEAST PARTIALLY LEACHED POLYCRYSTALLINE DIAMOND TABLE AND RESULTANT POLYCRYSTALLINE DIAMOND COMPACTS
    28.
    发明申请
    METHOD OF PARTIALLY INFILTRATING AN AT LEAST PARTIALLY LEACHED POLYCRYSTALLINE DIAMOND TABLE AND RESULTANT POLYCRYSTALLINE DIAMOND COMPACTS 审中-公开
    部分浸入多部分浸出的多晶金刚石表和多晶金刚石复合材料的方法

    公开(公告)号：US20120138370A1

    公开(公告)日：2012-06-07

    申请号：US12961787

    申请日：2010-12-07

    Applicant: Debkumar Mukhopadhyay ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez

    Inventor： Debkumar Mukhopadhyay ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez

    IPC: E21B10/36 ,  B01J3/06 ,  B24D18/00 ,  B24D3/10

    CPC classification number: E21B10/5735 ,  B22F7/06 ,  B22F2005/001 ,  B24D3/10 ,  C22C26/00 ,  E21B10/55 ,  E21B10/567 ,  Y10T428/24777

    Abstract: In an embodiment, a method of fabricating a polycrystalline diamond compact (“PDC”) includes forming a polycrystalline diamond (“PCD”) table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (“HPHT”) process. The PCD table includes bonded diamond grains defining interstitial regions, with the metal-solvent catalyst disposed therein. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process under diamond-stable temperature-pressure conditions to partially infiltrate the at least partially leached PCD table with an infiltrant. A maximum temperature (T), a total process time (t), and a maximum pressure (P) of the second HPHT process are chosen so that β is about 2° Celsius·hours/gigapascals (“° C.·h/GPa”) to about 325° C.·h/GPa, with β represented as β=T·t/P.

    Abstract translation: 在一个实施例中，制造多晶金刚石压块（“PDC”）的方法包括在金属溶剂催化剂存在下，在第一高压/高温（“HPHT”）中形成多晶金刚石（“PCD”） “）进程。 PCD表包括定义间隙区的结合金刚石颗粒，金属溶剂催化剂置于其中。 该方法包括至少部分浸出PCD表以从其中除去至少一部分金属溶剂催化剂。 该方法包括在金刚石稳定的温度压力条件下使至少部分浸出的PCD台和基板经受第二HPHT处理，以用渗透剂部分渗透至少部分浸出的PCD台。 选择第二HPHT处理的最高温度（T），总处理时间（t）和最大压力（P），使得＆bgr; 约2摄氏度·小时/千兆帕（“℃·h / GPa”）至约325℃·h / GPa，具有＆bgr; 表示为＆bgr; = T·t / P。

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