摘要:
Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate and a preformed polycrystalline diamond table including an interfacial surface bonded to the substrate and an opposing working surface. The preformed polycrystalline diamond table includes a proximal region extending from the interfacial surface to an intermediate location within the preformed polycrystalline diamond table that includes a metallic infiltrant infiltrated from the substrate, and a distal region extending from the working surface to the intermediate location that is substantially free of the metallic infiltrant. A boundary exists between the proximal and distal regions that has a nonplanar irregular profile characteristic of the metallic infiltrant having been infiltrated into the preformed polycrystalline diamond table.
摘要:
In an embodiment, a method of fabricating a polycrystalline diamond structure includes forming an assembly including a sintered polycrystalline diamond body positioned between an aluminum-containing layer and a substrate. The method further includes subjecting the assembly to a high-pressure/high-temperature process to form the polycrystalline diamond structure including a polycrystalline diamond table bonded to the substrate.
摘要:
In one embodiment of the present invention, a method of fabricating a superabrasive article is disclosed. A mass of unsintered diamond particles may be infiltrated with metal-solvent catalyst from a metal-solvent-catalyst-containing material to promote formation of a sintered body of diamond grains including interstitial regions. At least a portion of the interstitial regions may also be infiltrated with silicon from a silicon-containing material. The silicon reacts with the sintered body to form silicon carbide within a portion of the interstitial regions.
摘要:
In an embodiment, a polycrystalline diamond compact (“PDC”) includes a substrate and a polycrystalline diamond (“PCD”) table bonded to the substrate. The PCD table includes an upper surface. The PCD table includes a first PCD region including bonded-together diamond grains and exhibits a first diamond density. At least a portion of the first PCD region extending inwardly from the working surface is substantially free of metal-solvent catalyst. The PCD table includes an intermediate second PCD region bonded to the substrate, which is disposed between the first PCD region and the substrate. The second PCD region includes bonded-together diamond grains defining interstitial regions, with at least a portion of the interstitial regions including metal-solvent catalyst disposed therein. The second PCD region exhibits a second diamond density that is greater than that of the first diamond density of the first PCD region.
摘要:
A polycrystalline diamond compact includes a substrate and a polycrystalline diamond table attached to the substrate. The polycrystalline diamond table includes an upper surface and at least one peripheral surface. Diamond grains of the polycrystalline diamond table define a plurality of interstitial regions. The polycrystalline diamond table includes a region having silicon carbide positioned within at least some of the interstitial regions thereof. In an embodiment, the first region extends over only a selected portion of the upper surface and/or at least a portion of the at least one peripheral surface. In another embodiment, the first region substantially contours the upper surface and a chamfer.
摘要:
In an embodiment, a polycrystalline diamond compact (“PDC”) comprises a substrate and a pre-sintered polycrystalline diamond (“PCD”) table including a plurality of bonded diamond grains defining a plurality of interstitial regions, an upper surface, and a back surface that is bonded to the substrate. The pre-sintered PCD table includes a first thermally-stable region extending inwardly from the upper surface, and a second region located between the first thermally-stable region and the substrate. The second region exhibits a thermal stability that is less than that of the first thermally-stable region, and includes at least one interstitial constituent disposed interstitially between the bonded diamond grains thereof. The at least one interstitial constituent may include at least one silicon-containing phase.
摘要:
Embodiments relate to methods of manufacturing polycrystalline diamond compacts (“PDCs”). In an embodiment, a method of fabricating a PDC includes positioning a plurality of diamond particles adjacent to a cemented carbide material. The cemented carbide material includes one or more types of tungsten-containing eta phases. The method further includes subjecting the plurality of diamond particles and the cemented carbide material to a high-pressure/high-temperature process effective to sinter the plurality of diamond particles so that a polycrystalline diamond table is formed without tungsten carbide grains of the cemented carbide material exhibiting abnormal grain growth that project into the polycrystalline diamond table.
摘要:
Embodiments relate to polycrystalline diamond compacts (“PDCs”) including a polycrystalline diamond (“PCD”) table that is substantially free of defects formed due to abnormal grain growth of tungsten carbide grains, and methods of fabricating such PDCs. In an embodiment, a PDC comprises a cemented tungsten carbide substrate including an interfacial surface that is substantially free of tungsten carbide grains exhibiting abnormal grain growth, and a PCD table bonded to the interfacial surface of the cemented tungsten carbide substrate. The PCD table includes a plurality of bonded diamond grains defining a plurality of interstitial regions. At least a portion of the interstitial regions includes a metal-solvent catalyst disposed therein. The PCD table may be substantially free of chromium or the PCD table and the cemented tungsten carbide substrate may each include chromium.
摘要:
A polycrystalline diamond compact includes a substrate and a polycrystalline diamond table attached to the substrate. The polycrystalline diamond table includes an upper surface and at least one peripheral surface. Diamond grains of the polycrystalline diamond table define a plurality of interstitial regions. The polycrystalline diamond table includes a region having silicon carbide positioned within at least some of the interstitial regions thereof. In an embodiment, the first region extends over only a selected portion of the upper surface and/or at least a portion of the at least one peripheral surface. In another embodiment, the first region substantially contours the upper surface and a chamfer.
摘要:
Embodiments of the present invention relate to superabrasive materials, superabrasive compacts employing such superabrasive materials, and methods of fabricating such superabrasive materials and compacts. One or more embodiments of a superabrasive material include a plurality of first superabrasive regions characteristic of being formed at least partially from a plurality of agglomerates, with each first superabrasive region including a plurality of first superabrasive grains that exhibit a first average grain size, and a matrix through which the plurality of first superabrasive regions is dispersed. The matrix includes a plurality second intercrystalline-bonded superabrasive grains that exhibit a second average grain size. The superabrasive material exhibits one or more of the following characteristics: (1) the first average grain size being less than that of the second average grain size; (2) the plurality of first superabrasive regions exhibiting a selectivity to be preferentially removed from the matrix; or (3) a thermal stability of the plurality of first superabrasive regions being greater than that of the matrix.