公开(公告)号：US20080164579A1

公开(公告)日：2008-07-10

申请号：US11621365

申请日：2007-01-09

申请人： Fenton R. McFeely ,  Alejandro G. Schrott ,  John J. Yurkas

发明人： Fenton R. McFeely ,  Alejandro G. Schrott ,  John J. Yurkas

IPC分类号： H01L21/20 ,  H01L29/12

CPC分类号： C23C16/30 ,  H01L21/28556 ,  H01L21/76877 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  Y10T428/249994

摘要： A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.

摘要翻译： 提供了一种用于沉积包括锗（Ge）和锑（Sb）在内的材料的化学气相沉积（CVD）方法，其在一些实施例中具有填充高纵横比开口的能力。 本发明的CVD方法允许在宽范围的值范围内控制GeSb化学计量，并且本发明的方法在低于400℃的衬底温度下进行，这使得本发明的方法与现有的互连工艺和材料兼容 。 除了上述之外，本发明的方法是非选择性CVD工艺，这意味着GeSb材料在绝缘和非绝缘材料上同样良好地沉积。

公开(公告)号：US07067422B2

公开(公告)日：2006-06-27

申请号：US10830804

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  John J. Yurkas ,  Vijay Narayanan

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  John J. Yurkas ,  Vijay Narayanan

IPC分类号： H01L21/44

CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517

摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

摘要翻译： 一种通过在处理室中提供具有高k电介质层的衬底并在热化学气相沉积工艺中在高k电介质层上形成含钽层的方法来形成含钽栅电极结构的方法， 将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体， （CH 3）2））前体气体。 在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。 在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。 还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

公开(公告)号：US06579614B2

公开(公告)日：2003-06-17

申请号：US09814766

申请日：2001-03-23

申请人： Kevin K. Chan ,  Erin C. Jones ,  Fenton R. McFeely ,  Paul M. Solomon ,  John J. Yurkas

发明人： Kevin K. Chan ,  Erin C. Jones ,  Fenton R. McFeely ,  Paul M. Solomon ,  John J. Yurkas

IPC分类号： B32B900

CPC分类号： C23C16/56 ,  H01L21/28008 ,  H01L21/32053 ,  H01L21/3211 ,  H01L29/4908 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12674 ,  Y10T428/1284 ,  Y10T428/265

摘要： A method of treating structures (and the structure formed thereby), so as to prevent or retard the oxidation of a metal film, and/or prevent its delamination a substrate, includes providing a structure including a refractory metal film formed on a substrate, placing the structure into a vessel having a base pressure below approximately 10−7 torr, exposing the structure to a silane gas at a sufficiently high predetermined temperature and predetermined pressure to cause formation of a metal silicide layer on the refractory metal film, and exposing the structure to a second gas at a sufficiently high temperature and pressure to nitride the metal silicide layer into a nitrided layer.

摘要翻译： 一种处理结构（及其形成的结构）的方法，以防止或延缓金属膜的氧化和/或防止其基板的分层，包括提供包括在基板上形成的难熔金属膜的结构，放置 将结构转换成基本压力低于约10 -7乇的容器，将结构暴露于足够高的预定温度和预定压力下的硅烷气体，以在难熔金属膜上形成金属硅化物层，并使结构暴露 以足够高的温度和压力将第二气体氮化成氮化层。

公开(公告)号：US06452276B1

公开(公告)日：2002-09-17

申请号：US09070394

申请日：1998-04-30

申请人： Stephan A. Cohen ,  Fenton R. McFeely ,  Cevdet I. Noyan ,  Kenneth P. Rodbell ,  John J. Yurkas ,  Robert Rosenberg

发明人： Stephan A. Cohen ,  Fenton R. McFeely ,  Cevdet I. Noyan ,  Kenneth P. Rodbell ,  John J. Yurkas ,  Robert Rosenberg

IPC分类号： H01L2348

CPC分类号： H01L21/7687 ,  H01L21/76843 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.