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公开(公告)号：US5437941A
公开(公告)日：1995-08-01
申请号：US373903
申请日：1995-01-17
CPC分类号： H01G9/145 , H01M2/0212 , H01M2/08 , H01M2/18
摘要： An electrical energy storage device (10). An electrode (12) consisting of a thin film of metal or metal oxide is deposited on a substrate (24), preferably by sputtering. Spherical plastic spacers (16) are uniformly dispersed on the electrode at a maximum density of about 1000 spacers per square millimeter of the electrode area. A second substrate also has an electrode (14) formed of a thin film of metal or metal oxide deposited on it, similar to the first substrate. The first and second substrates are arranged so that the electrodes face each other and are separated by the spherical plastic spacers to form a gap (18) of about 20 microns between the electrodes. An electrolyte (20) is filled in the gap, and the edges of the gap are optionally sealed (22) to form the electrical energy storage device. The device may also be formed by using metal foils, and eliminating one or more of the substrates. In both cases, the use of an electrolyte is optional.
摘要翻译： 一种电能存储装置（10）。 优选通过溅射将由金属或金属氧化物薄膜组成的电极（12）沉积在基板（24）上。 球形塑料间隔物（16）以电极面积每平方毫米约1000个间隔物的最大密度均匀分散在电极上。 类似于第一衬底，第二衬底还具有由沉积在其上的金属或金属氧化物薄膜形成的电极（14）。 第一和第二基板被布置成使得电极彼此面对并且被球形塑料间隔物隔开，以在电极之间形成约20微米的间隙（18）。 电解质（20）填充在间隙中，并且间隙的边缘任选地被密封（22）以形成电能存储装置。 该装置还可以通过使用金属箔形成，并且消除一个或多个基板。 在这两种情况下，使用电解质都是可选的。
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22.发明授权Rechargeable electrical energy storage device having organometallic electrodes 失效具有有机金属电极的可充电电能储存装置
公开(公告)号：US5388025A
公开(公告)日：1995-02-07
申请号：US937776
申请日：1992-09-01
摘要： A rechargeable electrical energy storage device (20). The cell has two electrodes (28, 36) constructed from a similar organometallic compound (30), and the electrodes are electrically connected by an ion carrying electrolyte (32). The electrodes are also physically separated from each other by a barrier (34) that will pass ions but not electrons. In one embodiment of the invention, the electrodes are ferrocene, and the electrolyte is sulfuric acid.
摘要翻译： 一种可充电电能存储装置（20）。 电池具有由类似的有机金属化合物（30）构成的两个电极（28,36），并且电极通过离子载体电解质（32）电连接。 电极也通过将通过离子而不是电子的屏障（34）在物理上彼此分离。 在本发明的一个实施方案中，电极是二茂铁，电解质是硫酸。
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23.发明授权
公开(公告)号：US5278726A
公开(公告)日：1994-01-11
申请号：US824136
申请日：1992-01-22
CPC分类号： H01L23/3121 , H01L21/56 , H01L24/48 , H01L2224/13144 , H01L2224/45644 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L24/45 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/181
摘要： A partially overmolded integrated circuit package (10) comprises a substrate (14) having circuit traces (11) and a semiconductor die receiving area (15) for attachment of a semiconductor die to the semiconductor die receiving area. Conductive bumps (18) are then applied to a plurality of contact pads on the semiconductor die. Then overmolding compound (16) is applied over the semiconductor die and a portion of the conductive bumps, leaving a portion of the conductive bumps partially exposed (19). Finally, interconnections (13) between the exposed portion of the conductive bumps and the circuit traces of the substrate are formed.
摘要翻译： 部分包覆成型的集成电路封装（10）包括具有电路迹线（11）的基板（14）和用于将半导体管芯附接到半导体管芯接收区域的半导体管芯接收区域（15）。 然后将导电凸块（18）施加到半导体管芯上的多个接触焊盘。 然后将包覆成型化合物（16）施加在半导体管芯上，并将一部分导电凸起部分露出（19）。 最后，形成导电凸块的暴露部分和衬底的电路迹线之间的互连（13）。
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公开(公告)号：US5217589A
公开(公告)日：1993-06-08
申请号：US770270
申请日：1991-10-03
CPC分类号： C04B41/009 , C04B41/52 , C04B41/89 , C23C14/022 , C23C14/18 , C23C26/00 , H05K3/388 , Y10T428/265
摘要： A method of metallizing a substrate by vacuum depositing a thin layer of chromium. The substrate is first cleaned (16) by exposing it to a plasma gas discharge. A thin layer of chromium metal is then sputtered under vacuum (17) onto the substrate. The substrate is then heated in an oxygen containing atmosphere (18) for a period of time and at a temperature sufficient to convert the chromium metal to chromium oxide. A second layer of chromium metal is then sputtered (20) onto the chromium oxide layer in order to form an adherent metal system to the substrate.
摘要翻译： 通过真空沉积薄层的铬来金属化衬底的方法。 首先通过将衬底暴露于等离子体气体放电来清洁衬底（16）。 然后将薄的铬金属层在真空（17）下溅射到基底上。 然后将基材在含氧气氛（18）中加热一段时间，并在足以将铬金属转化为氧化铬的温度下加热。 然后将第二层铬金属溅射（20）到氧化铬层上，以便形成与衬底粘附的金属体系。
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