公开(公告)号：US20110088783A1

公开(公告)日：2011-04-21

申请号：US12656837

申请日：2010-02-17

申请人： Young-jun Park ,  Zhenan Bao ,  Joon-hak Oh

发明人： Young-jun Park ,  Zhenan Bao ,  Joon-hak Oh

IPC分类号： H01L31/00

CPC分类号： H01L51/4253 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0053 ,  H01L51/4226 ,  H01L51/441 ,  Y02E10/549 ,  Y02P70/521

摘要： Example embodiments relate to a solar cell including organic nanowires. The solar cell may include a photoelectric conversion layer formed of a p-type material including an organic material and an n-type material including organic nanowires.

摘要翻译： 示例实施例涉及包括有机纳米线的太阳能电池。 太阳能电池可以包括由包括有机材料的p型材料和包括有机纳米线的n型材料形成的光电转换层。

公开(公告)号：US07863086B2

公开(公告)日：2011-01-04

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

发明人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07839463B2

公开(公告)日：2010-11-23

申请号：US10578028

申请日：2004-10-28

申请人： Kyoung-Ju Shin ,  Chong-Chul Chai ,  Joon-Hak Oh ,  Jin-Hong Kim ,  Sung-Jin Hong

发明人： Kyoung-Ju Shin ,  Chong-Chul Chai ,  Joon-Hak Oh ,  Jin-Hong Kim ,  Sung-Jin Hong

IPC分类号： G02F1/136

CPC分类号： G02F1/1365 ,  G02F1/13624 ,  G02F1/136286 ,  G02F2001/13629

摘要： A thin film diode array panel comprising: an insulating substrate (110); first and second redundant gate lines (141, 142) made of an opaque conductor and formed on the insulating substrate; first and second floating electrodes (143, 144) made of an opaque conductor, formed on the insulating substrate, and disposed between the first and second redundant gate lines (141, 142); an insulating layer (151, 152) formed on the first and second floating electrodes (143, 144); a first gate line (121) formed on the first redundant gate line (141) and including a first input electrode (123) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first input electrode and the first floating electrode; a second gate line (122) formed on the second redundant gate line (142) and including a second input electrode (124) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second input electrode (124) and the second floating electrode (144); and a pixel electrode (190) including a first contact electrode (191) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first contact electrode (191) and the first floating electrode (143), a second contact electrode (192) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second contact electrode (192) and the second floating electrode (144), and a main body is provided.

摘要翻译： 一种薄膜二极管阵列面板，包括：绝缘衬底（110）; 第一和第二冗余栅极线（141,142），由不透明导体制成并形成在绝缘基板上; 第一和第二浮置电极（143,144），由不透明导体制成，形成在所述绝缘基板上，并设置在所述第一和第二冗余栅极线（141,142）之间; 形成在第一和第二浮置电极（143,144）上的绝缘层（151,152）; 第一栅极线（121），形成在所述第一冗余栅极线（141）上并且包括与所述第一浮置电极（143）重叠的第一输入电极（123），其中所述绝缘层（151）插入在所述第一输入电极和 第一浮动电极; 形成在第二冗余栅极线（142）上并包括与第二浮置电极（144）重叠的第二输入电极（124）的第二栅极线（122），其中绝缘层（152）介于第二输入电极 ）和第二浮置电极（144）; 和包括与所述第一浮动电极（143）重叠的第一接触电极（191）的像素电极（190），其中所述绝缘层（151）插入在所述第一接触电极（191）和所述第一浮动电极（143）之间， 与第二接触电极（192）和第二浮动电极（144）之间插入绝缘层（152）的第二浮动电极（144）重叠的第二接触电极（192）和主体。

公开(公告)号：US07638358B2

公开(公告)日：2009-12-29

申请号：US11601086

申请日：2006-11-17

申请人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

发明人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/0545 ,  B82Y30/00 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0016 ,  H01L51/0558

摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

摘要翻译： 根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层， 在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

公开(公告)号：US20090317942A1

公开(公告)日：2009-12-24

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung KIM ,  Soo-jin KIM ,  Young-min KIM ,  Keun-kyu SONG ,  Yong-uk LEE ,  Mun-pyo HONG ,  Tae-young CHOI ,  Joon-hak OH

发明人： Bo-sung KIM ,  Soo-jin KIM ,  Young-min KIM ,  Keun-kyu SONG ,  Yong-uk LEE ,  Mun-pyo HONG ,  Tae-young CHOI ,  Joon-hak OH

IPC分类号： H01L51/40 ,  H01L21/336

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07622738B2

公开(公告)日：2009-11-24

申请号：US11638270

申请日：2006-12-12

申请人： Joon-hak Oh ,  Keun-kyu Song

发明人： Joon-hak Oh ,  Keun-kyu Song

IPC分类号： H01L29/04

CPC分类号： H01L51/102 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0005 ,  H01L51/0545

摘要： An display device having a thin film transistor with improved characteristics comprising a gate conductor including a gate electrode formed on an insulating substrate; a gate insulating layer formed on the gate electrode; a conductive layer comprising a plurality of layers including a source electrode and a drain electrode formed on the gate insulating layer and separated from each other across the gate electrode to define a channel region; and an organic semiconductor layer formed in the channel region, wherein the conductive layer comprises a metal layer and a transparent electrode layer.

摘要翻译： 一种具有改进特性的薄膜晶体管的显示装置，包括：栅极导体，其包括形成在绝缘基板上的栅电极; 形成在所述栅电极上的栅极绝缘层; 导电层，包括多个层，所述多个层包括形成在所述栅极绝缘层上的源电极和漏极，并且跨越所述栅电极彼此分离以限定沟道区; 以及形成在所述沟道区中的有机半导体层，其中所述导电层包括金属层和透明电极层。

公开(公告)号：US20090195725A1

公开(公告)日：2009-08-06

申请号：US12369260

申请日：2009-02-11

申请人： Hee-Seob Kim ,  Joon-Hak Oh ,  Doo-Hwan You ,  Young-Chol Yang

发明人： Hee-Seob Kim ,  Joon-Hak Oh ,  Doo-Hwan You ,  Young-Chol Yang

IPC分类号： G02F1/133

CPC分类号： G02F1/133707 ,  G02F1/134336 ,  G02F1/1393

摘要： A thin film transistor array panel is provided, which includes: a substrate; a plurality of first signal lines formed on the substrate; a plurality of second signal lines intersecting the first signal lines to define pixel areas; first and second pixel electrodes disposed substantially in a pixel area and having different areas; a plurality of thin film transistors connected to the first and the second signal lines and at least one of the first and the second pixel electrodes; a coupling electrode overlapping the second pixel electrode; and a tilt direction defining member for determining tilt directions of liquid crystal molecules formed on the substrate.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：基板; 形成在所述基板上的多个第一信号线; 与所述第一信号线相交的多个第二信号线，以限定像素区域; 第一和第二像素电极基本上设置在像素区域中并且具有不同的面积; 连接到第一和第二信号线以及第一和第二像素电极中的至少一个的多个薄膜晶体管; 与第二像素电极重叠的耦合电极; 以及用于确定形成在基板上的液晶分子的倾斜方向的倾斜方向限定件。

公开(公告)号：US20080012821A1

公开(公告)日：2008-01-17

申请号：US11860314

申请日：2007-09-24

申请人： Yong-Uk Lee ,  Joon-Hak Oh ,  Jong-Hyun Seo ,  Bo-Sung Kim ,  Mun-Pyo Hong

发明人： Yong-Uk Lee ,  Joon-Hak Oh ,  Jong-Hyun Seo ,  Bo-Sung Kim ,  Mun-Pyo Hong

IPC分类号： G09G3/34

CPC分类号： G02F1/167

摘要： A electrophoretic display is provided, which includes: a thin film transistor array panel including a plurality of data lines having a plurality of source electrodes and a plurality of drain electrodes, a plurality of organic semiconductor islands at least covering the portion of the source and the drain electrodes and disposed between the source and the drain electrodes, a plurality of gate insulators formed on the organic semiconductor islands, a plurality of gate lines including a plurality of gate electrodes disposed on the gate insulators, and a plurality of pixel electrodes connected to the drain electrodes; a common electrode panel facing the thin film transistor array panel and having a common electrode; and a plurality of micro-capsules containing a plurality of negative and positive pigment particles and interposed between the thin film transistor array panel and the common electrode panel.

摘要翻译： 提供一种电泳显示器，其包括：薄膜晶体管阵列面板，包括具有多个源电极和多个漏电极的多条数据线，多个有机半导体岛至少覆盖源的部分， 漏电极，并且设置在源极和漏极之间，形成在有机半导体岛上的多个栅极绝缘体，多个栅极线，包括设置在栅极绝缘体上的多个栅电极，以及多个像素电极， 漏电极; 面对薄膜晶体管阵列面板并具有公共电极的公共电极面板; 以及包含多个负极和正性颜料颗粒的多个微胶囊，并且插入在薄膜晶体管阵列面板和公共电极面板之间。

公开(公告)号：US07286281B2

公开(公告)日：2007-10-23

申请号：US11152897

申请日：2005-06-14

申请人： Yong-Uk Lee ,  Joon-Hak Oh ,  Jong-Hyun Seo ,  Bo-Sung Kim ,  Mun-Pyo Hong

发明人： Yong-Uk Lee ,  Joon-Hak Oh ,  Jong-Hyun Seo ,  Bo-Sung Kim ,  Mun-Pyo Hong

IPC分类号： G02B26/00 ,  G09G3/34 ,  G03G17/04

CPC分类号： G02F1/167

摘要： A electrophoretic display is provided, which includes: a thin film transistor array panel including a plurality of data lines having a plurality of source electrodes and a plurality of drain electrodes, a plurality of organic semiconductor islands at least covering the portion of the source and the drain electrodes and disposed between the source and the drain electrodes, a plurality of gate insulators formed on the organic semiconductor islands, a plurality of gate lines including a plurality of gate electrodes disposed on the gate insulators, and a plurality of pixel electrodes connected to the drain electrodes; a common electrode panel facing the thin film transistor array panel and having a common electrode; and a plurality of micro-capsules containing a plurality of negative and positive pigment particles and interposed between the thin film transistor array panel and the common electrode panel.

摘要翻译： 提供一种电泳显示器，其包括：薄膜晶体管阵列面板，包括具有多个源电极和多个漏电极的多条数据线，多个有机半导体岛至少覆盖源的部分， 漏电极，并且设置在源极和漏极之间，形成在有机半导体岛上的多个栅极绝缘体，多个栅极线，包括设置在栅极绝缘体上的多个栅电极，以及多个像素电极， 漏电极; 面对薄膜晶体管阵列面板并具有公共电极的公共电极面板; 以及包含多个负极和正性颜料颗粒的多个微胶囊，并且插入在薄膜晶体管阵列面板和公共电极面板之间。

公开(公告)号：US20070216627A1

公开(公告)日：2007-09-20

申请号：US11739359

申请日：2007-04-24

申请人： Jong-Lae Kim ,  Byeong-Seob Ban ,  So-Youn Park ,  Joon-Hak Oh

发明人： Jong-Lae Kim ,  Byeong-Seob Ban ,  So-Youn Park ,  Joon-Hak Oh

IPC分类号： G09G3/36

CPC分类号： G02F1/13624 ,  G02F1/136213 ,  H01L27/12 ,  H01L27/124

摘要： A thin film transistor array panel is provided, which includes: a substrate; a plurality of first signal lines formed on the substrate; a plurality of second signal lines intersecting, and intersection from, the first signal lines; a plurality of pixel electrodes formed in insulated areas of the first and second signal lines; a plurality of first thin film transistors electrically connected to the first signal lines, the second signal lines, and the pixel electrodes; a plurality of buffer electrodes capacitively coupled to the pixel electrodes and located at a boundary of the intersection areas; and a plurality of second thin film transistors electrically connected to the buffer electrodes and the first signal lines, wherein the first signal lines are connected to the pixel electrodes of a previous row.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：基板; 形成在所述基板上的多个第一信号线; 与第一信号线相交和交叉的多个第二信号线; 形成在所述第一和第二信号线的绝缘区域中的多个像素电极; 电连接到第一信号线，第二信号线和像素电极的多个第一薄膜晶体管; 电容耦合到像素电极并位于交叉区域的边界处的多个缓冲电极; 以及电连接到缓冲电极和第一信号线的多个第二薄膜晶体管，其中第一信号线连接到前一行的像素电极。