ORGANIC SEMICONDUCTOR COPOLYMERS CONTAINING OLIGOTHIOPHENE AND n-TYPE HETEROAROMATIC UNITS
    22.
    发明申请
    ORGANIC SEMICONDUCTOR COPOLYMERS CONTAINING OLIGOTHIOPHENE AND n-TYPE HETEROAROMATIC UNITS 有权
    含有二乙二醇和n-型异构体单体的有机半导体共聚物

    公开(公告)号:US20080224130A1

    公开(公告)日:2008-09-18

    申请号:US12054134

    申请日:2008-03-24

    CPC classification number: H01L51/0043 H01L51/0036 H01L51/0512 Y10T428/31533

    Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    Abstract translation: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件,例如作为沟道层。

    Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films
    28.
    发明授权
    Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films 有权
    使用芳香族烯二炔衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件

    公开(公告)号:US08097694B2

    公开(公告)日:2012-01-17

    申请号:US12382033

    申请日:2009-03-06

    Abstract: Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

    Abstract translation: 公开了使用芳族烯二炔衍生物的有机半导体薄膜,其制造方法,以及制造结合有机半导体薄膜的电子器件的制造方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性,其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂,在室温或接近室温的温度下沉积在各种基材上,以形成涂膜,然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此,根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管,电致发光器件,太阳能电池和存储器件中。

    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
    29.
    发明授权
    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
    星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管

    公开(公告)号:US08058457B2

    公开(公告)日:2011-11-15

    申请号:US12656831

    申请日:2010-02-17

    Abstract: A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

    Abstract translation: 具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物,从而同时显示两者 p型和n型半导体特性。 另外,使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。 星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂,导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

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