公开(公告)号：US08348520B2

公开(公告)日：2013-01-08

申请号：US12864677

申请日：2008-12-22

申请人： Motohiko Yamasaki ,  Tadahiko Nakai ,  Takeshi Satake ,  Takafumi Hyodo ,  Haruo Ooizumi ,  Masahiro Hoshino ,  Kenji Sato

发明人： Motohiko Yamasaki ,  Tadahiko Nakai ,  Takeshi Satake ,  Takafumi Hyodo ,  Haruo Ooizumi ,  Masahiro Hoshino ,  Kenji Sato

IPC分类号： G02B6/38

CPC分类号： G02B6/4296 ,  G02B6/262 ,  G02B6/32 ,  G02B6/4206 ,  G02B6/4292

摘要： An optical connector structure (C) includes: an optical fiber (100) having a laser beam entrance end to which a quartz chip (120) is integrally connected; a ferrule (200) into which a portion of the optical fiber (100) including the quartz chip (120) is inserted and which holds the portion of the optical fiber; and a receptacle (21) surrounding the ferrule (200), and including a large-diameter hole (21b) formed toward an opening and a small-diameter hole formed toward a back of the receptacle so as to be connected to the large-diameter hole. A front end portion (210) of the ferrule (200) is inserted into the small-diameter hole (21a) of the receptacle (21), and a back body portion (211) of the ferrule (200) is inserted into the large-diameter hole (21b) of the receptacle (21).

摘要翻译： 光连接器结构（C）包括：具有激光束入射端的光纤（100），石英芯片（120）整体连接到激光束入口端; 套管（200），其中插入包括石英片（120）的光纤（100）的一部分并保持光纤的该部分; 以及围绕所述套圈（200）的容器（21），并且包括朝向所述开口形成的大直径孔（21b）和朝向所述容器的后部形成的小直径孔，以便连接到所述大直径 孔。 套圈（200）的前端部（210）插入到容器（21）的小直径孔（21a）中，并且将套圈（200）的后部部分（211）插入到大的 - 插座（21）的直径孔（21b）。

公开(公告)号：US08236266B2

公开(公告)日：2012-08-07

申请号：US13187282

申请日：2011-07-20

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C01B33/021

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for improving yield of an upgraded metallurgical-grade (UMG) silicon purification process is disclosed. In the UMG silicon (UMGSi) purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time, including: a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for purification processes is also disclosed, which allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

摘要翻译： 公开了一种提高冶金级（UMG）硅纯化工艺的产率的方法。 在UMG硅（UMGSi）纯化方法中，在反应室中，同时在同一装置中对其中的硅熔体进行纯化，全部或多种以下技术，包括：坩埚比方法， 添加水溶性物质，控制功率，控制真空压力，排气向上排气，通过高压气体喷射隔离，并通过喷砂除碳，从而减少硅中的氧，碳和其他杂质 熔化，满足太阳能电池的高纯硅标准，提高产量同时保持低成本，并避免随着时间的推移EMF减少。 还公开了一种用于净化过程的排气装置，其允许排气从反应器室的顶部排出，从而避免排入硅熔体的回流和反应器的侵蚀。

公开(公告)号：US20120020865A1

公开(公告)日：2012-01-26

申请号：US13187282

申请日：2011-07-20

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C01B33/037 ,  C03B19/00 ,  C04B5/06

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for improving yield of an upgraded metallurgical-grade (UMG) silicon purification process is disclosed. In the UMG silicon (UMGSi) purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time, including: a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for purification processes is also disclosed, which allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

摘要翻译： 公开了一种提高冶金级（UMG）硅纯化工艺的产率的方法。 在UMG硅（UMGSi）纯化方法中，在反应室中，同时在同一装置中对其中的硅熔体进行纯化，全部或多种以下技术，包括：坩埚比方法， 添加水溶性物质，控制功率，控制真空压力，排气向上排气，通过高压气体喷射隔离，并通过喷砂除碳，从而减少硅中的氧，碳和其他杂质 熔化，满足太阳能电池的高纯硅标准，提高产量同时保持低成本，并避免随着时间的推移EMF减少。 还公开了一种用于净化过程的排气装置，其允许排气从反应器室的顶部排出，从而避免排入硅熔体的回流和反应器的侵蚀。

公开(公告)号：US20110198336A1

公开(公告)日：2011-08-18

申请号：US13023467

申请日：2011-02-08

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： H05B7/18 ,  F27B14/06

CPC分类号： C01B33/037 ,  C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  F27B14/06 ,  F27B14/14 ,  H05B7/18

摘要： A system for forming high quality silicon material, e.g., polysilicon. In a specific embodiment, the melted material comprises a silicon material and an impurity, e.g., phosphorous species. The system includes a crucible having an interior region. In a specific embodiment, the crucible is made of a suitable material such as a quartz material or others. The quartz material is capable of withstanding a temperature of at least 1400 Degrees Celsius for processing silicon. In a specific embodiment, the crucible is configured in an upright position and has an open region to expose a melted material. In a specific embodiment, the present system has an energy source. Such energy source may be an arc heater or other suitable heating device, including multiple heating devices, which may be the same or different. The arc heater is configured above the open region and spaced by a gap between the exposed melted material and a muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. In a specific embodiment, the system produces a melted material comprising a resulting phosphorous species of 0.1 ppm and less, which is purified silicon.

摘要翻译： 一种用于形成高质量硅材料的系统，例如多晶硅。 在具体实施方案中，熔融材料包括硅材料和杂质，例如磷类。 该系统包括具有内部区域的坩埚。 在具体实施例中，坩埚由合适的材料例如石英材料制成。 石英材料能够耐受至少1400摄氏度的温度来处理硅。 在具体实施例中，坩埚被构造成直立位置并且具有敞开的区域以暴露熔融的材料。 在具体实施例中，本系统具有能量源。 这种能量源可以是电弧加热器或其它合适的加热装置，包括可以相同或不同的多个加热装置。 电弧加热器构造在开放区域之上并且间隔开暴露的熔融材料和电弧加热器的枪口区域之间的间隙，以在暴露的熔融材料的中心区域附近形成确定的温度分布，同时保持外部 在低于坩埚的石英材料的熔点的温度下熔化的材料的区域。 在一个具体的实施方案中，系统产生熔融材料，其包含0.1ppm及更少的所得磷种，其为纯化的硅。

公开(公告)号：USD637513S1

公开(公告)日：2011-05-10

申请号：US29327795

申请日：2008-11-13

申请人： Masahiro Hoshino

设计人： Masahiro Hoshino

公开(公告)号：US07923583B2

公开(公告)日：2011-04-12

申请号：US12392122

申请日：2009-02-25

申请人： Masahiro Hoshino ,  Nobufumi Watanabe ,  Keisuke Sugita

发明人： Masahiro Hoshino ,  Nobufumi Watanabe ,  Keisuke Sugita

IPC分类号： C07C45/33 ,  C07C35/08

CPC分类号： B01J35/1061 ,  B01J23/38 ,  B01J23/70 ,  B01J23/75 ,  B01J29/0308 ,  B01J35/1023 ,  B01J35/1028 ,  B01J37/0018 ,  B01J37/033 ,  B01J37/10 ,  B01J2229/32 ,  C07C29/50 ,  C07C45/33 ,  C07C2601/14 ,  C07C35/08 ,  C07C49/403

摘要： An object of the present invention is to provide a method capable of producing a cycloalkanol and/or a cycloalkanone with a favorable selectivity coefficient by oxidizing a cycloalkane with a favorable conversion ratio.Disclosed is a method for producing a cycloalkanol and/or a cycloalkanone, which comprises oxidizing a cycloalkane with oxygen in the presence of a mesoporous silica which contains at least one transition metal and has been also subjected to contact treatment with an amine and/or ammonia. Preferably, a crystal obtained by mixing a compound containing the metal, a silicon compound, a structure-directing agent and water is subjected to contact treatment with an amine and/or ammonia and then fired to obtain a mesoporous silica, and a cycloalkane is oxidized with oxygen in the presence of the mesoporous silica.

摘要翻译： 本发明的目的是提供一种通过以良好的转化率氧化环烷烃，能够制备具有良好选择性系数的环烷醇和/或环烷酮的方法。 公开了一种制备环烷醇和/或环烷酮的方法，其包括在含有至少一种过渡金属的介孔二氧化硅的存在下用氧氧化环烷烃，并且还已经用胺和/或氨进行接触处理 。 优选将通过混合含有金属，硅化合物，结构导向剂和水的化合物得到的晶体与胺和/或氨进行接触处理，然后烧制以获得介孔二氧化硅，并且环烷烃被氧化 在介孔二氧化硅存在下用氧气。

公开(公告)号：US20100310212A1

公开(公告)日：2010-12-09

申请号：US12864677

申请日：2008-12-22

申请人： Motohiko Yamasaki ,  Tadahiko Nakai ,  Takeshi Satake ,  Takafumi Hyodo ,  Haruo Ooizumi ,  Masahiro Hoshino ,  Kenji Sato

发明人： Motohiko Yamasaki ,  Tadahiko Nakai ,  Takeshi Satake ,  Takafumi Hyodo ,  Haruo Ooizumi ,  Masahiro Hoshino ,  Kenji Sato

IPC分类号： G02B6/38

CPC分类号： G02B6/4296 ,  G02B6/262 ,  G02B6/32 ,  G02B6/4206 ,  G02B6/4292

摘要： An optical connector structure (C) includes: an optical fiber (100) having a laser beam entrance end to which a quartz chip (120) is integrally connected; a ferrule (200) into which a portion of the optical fiber (100) including the quartz chip (120) is inserted and which holds the portion of the optical fiber; and a receptacle (21) surrounding the ferrule (200), and including a large-diameter hole (21b) formed toward an opening and a small-diameter hole formed toward a back of the receptacle so as to be connected to the large-diameter hole. A front end portion (210) of the ferrule (200) is inserted into the small-diameter hole (21a) of the receptacle (21), and a back body portion (211) of the ferrule (200) is inserted into the large-diameter hole (21b) of the receptacle (21).

摘要翻译： 光连接器结构（C）包括：具有激光束入射端的光纤（100），石英芯片（120）整体连接到激光束入口端; 套管（200），其中插入包括石英片（120）的光纤（100）的一部分并保持光纤的该部分; 以及围绕所述套圈（200）的容器（21），并且包括朝向所述开口形成的大直径孔（21b）和朝向所述容器的后部形成的小直径孔，以便连接到所述大直径 孔。 套圈（200）的前端部（210）插入到容器（21）的小直径孔（21a）中，并且将套圈（200）的后部部分（211）插入到大的 - 插座（21）的直径孔（21b）。

公开(公告)号：US07189845B2

公开(公告)日：2007-03-13

申请号：US11088874

申请日：2005-03-25

申请人： Keisuke Sugita ,  Masaru Kitamura ,  Masahiro Hoshino

发明人： Keisuke Sugita ,  Masaru Kitamura ,  Masahiro Hoshino

IPC分类号： C07D201/04

CPC分类号： C07D201/04 ,  B01J29/90 ,  B01J38/12 ,  Y02P20/52 ,  Y02P20/584

摘要： The invention provides a method for producing ε-caprolactam comprising the steps of: a reaction process which subjects cyclohexanone oxime to a Beckmann rearrangement reaction in the presence of a solid catalyst; and a catalyst regeneration process which regenerates the solid catalyst used in the reaction process by heat treatment under an atmosphere comprising an oxygen-containing gas, wherein the solid catalyst heat-treated in the catalyst regeneration process is used in the reaction process, the carbon contents in the solid catalyst in the reaction process and the catalyst regeneration process are maintained in a range of 0.5 to 2% by weight, and the nitrogen contents in the solid catalyst in the reaction process and the catalyst regeneration process are maintained in a range of 0.01 to 0.2% by weight.According to the invention, ε-caprolactam can be produced in a high production yield for a long period of time by enhancing persistence of the catalytic activity for producing ε-caprolactam.

摘要翻译： 本发明提供了一种生产ε-己内酰胺的方法，包括以下步骤：在固体催化剂存在下将环己酮肟与贝克曼重排反应相对应的反应过程; 以及催化剂再生方法，其通过在包含含氧气体的气氛下进行热处理来再生反应过程中使用的固体催化剂，其中在反应过程中使用在催化剂再生过程中热处理的固体催化剂，碳含量 在反应过程中的固体催化剂和催化剂再生过程保持在0.5〜2重量％的范围内，并且在反应过程和催化剂再生过程中固体催化剂中的氮含量保持在0.01 至0.2重量％。 根据本发明，ε-己内酰胺可以通过增加用于生产ε-己内酰胺的催化活性的持久性，以高生产率长时间生产。

公开(公告)号：US20050245740A1

公开(公告)日：2005-11-03

申请号：US11088874

申请日：2005-03-25

申请人： Keisuke Sugita ,  Masaru Kitamura ,  Masahiro Hoshino

发明人： Keisuke Sugita ,  Masaru Kitamura ,  Masahiro Hoshino

IPC分类号： C07D223/10 ,  B01J29/90 ,  B01J38/12 ,  C07B61/00 ,  C07D201/04 ,  B01J20/34

CPC分类号： C07D201/04 ,  B01J29/90 ,  B01J38/12 ,  Y02P20/52 ,  Y02P20/584

摘要： The invention provides a method for producing ε-caprolactam comprising the steps of: a reaction process which subjects cyclohexanone oxime to a Beckmann rearrangement reaction in the presence of a solid catalyst; and a catalyst regeneration process which regenerates the solid catalyst used in the reaction process by heat treatment under an atmosphere comprising an oxygen-containing gas, wherein the solid catalyst heat-treated in the catalyst regeneration process is used in the reaction process, the carbon contents in the solid catalyst in the reaction process and the catalyst regeneration process are maintained in a range of 0.5 to 2% by weight, and the nitrogen contents in the solid catalyst in the reaction process and the catalyst regeneration process are maintained in a range of 0.01 to 0.2% by weight. According to the invention, ε-caprolactam can be produced in a high production yield for a long period of time by enhancing persistence of the catalytic activity for producing ε-caprolactam.

摘要翻译： 本发明提供了一种生产ε-己内酰胺的方法，包括以下步骤：在固体催化剂存在下将环己酮肟与贝克曼重排反应相对应的反应过程; 以及催化剂再生方法，其通过在包含含氧气体的气氛下进行热处理来再生反应过程中使用的固体催化剂，其中在反应过程中使用在催化剂再生过程中热处理的固体催化剂，碳含量 在反应过程中的固体催化剂和催化剂再生过程保持在0.5〜2重量％的范围内，并且在反应过程和催化剂再生过程中固体催化剂中的氮含量保持在0.01 至0.2重量％。 根据本发明，ε-己内酰胺可以通过增加用于生产ε-己内酰胺的催化活性的持久性，以高生产率长时间生产。

公开(公告)号：US20050182254A1

公开(公告)日：2005-08-18

申请号：US11055101

申请日：2005-02-11

申请人： Keisuke Sugita ,  Masaru Kitamura ,  Masahiro Hoshino

发明人： Keisuke Sugita ,  Masaru Kitamura ,  Masahiro Hoshino

IPC分类号： C07D223/10 ,  B01J29/035 ,  B01J29/90 ,  B01J38/06 ,  B01J38/08 ,  B01J38/12 ,  B01J38/18 ,  B01J38/62 ,  B01J38/66 ,  C07B61/00 ,  C07D201/04 ,  C07D201/14 ,  B01J38/04

CPC分类号： B01J38/08 ,  B01J29/90 ,  B01J38/12 ,  B01J38/66 ,  C07D201/04 ,  Y02P20/52 ,  Y02P20/584

摘要： A method for producing ε-caprolactam and a method for reactivating a zeolite catalyst for the production are provided. In the reactivation step, a zeolite catalyst is allowed to contact a gas containing a carboxylic acid, water and a compound selected from ammonia and amines. In accordance with the present invention, the catalytic activities of a zeolite catalyst used for the Beckmann rearrangement reaction of cyclohexanone oxime can be effectively restored. Consequently, ε-caprolactam may be produced with a high production yield for a long period of time by reusing the catalyst by the method described above.

摘要翻译： 提供了制备ε-己内酰胺的方法和用于再生催化剂的方法。 在再活化步骤中，使沸石催化剂与含有羧酸，水和选自氨和胺的化合物的气体接触。 根据本发明，可以有效地恢复用于环己酮肟的贝克曼重排反应的沸石催化剂的催化活性。 因此，通过上述方法重新使用催化剂，可以长期生产ε-己内酰胺。