公开(公告)号：US20210391185A1

公开(公告)日：2021-12-16

申请号：US17459070

申请日：2021-08-27

Applicant: Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/32 ,  C23C16/56

Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.

公开(公告)号：US20210343541A1

公开(公告)日：2021-11-04

申请号：US17372847

申请日：2021-07-12

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Shawming Ma

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3105

Abstract: A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.

公开(公告)号：US20210305071A1

公开(公告)日：2021-09-30

申请号：US17217019

申请日：2021-03-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Shanyu Wang ,  Chun Yan

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/02

Abstract: Methods for processing a workpiece are provided. conducting a thermal treatment on a workpiece are provided. The workpiece contains at least one layer of metal. The method can include generating one or more species from a process gas. The process gas can include hydrogen or deuterium. The method can include filtering the one or more species to create a filtered mixture and exposing the workpiece to the filtered mixture. an oxidation process on a workpiece are provided. The method can be conducted at a process temperature of less than 350° C.

公开(公告)号：US11107695B2

公开(公告)日：2021-08-31

申请号：US16718356

申请日：2019-12-18

Applicant: Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/32 ,  C23C16/56 ,  H01L29/66

Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.

公开(公告)号：US11107693B2

公开(公告)日：2021-08-31

申请号：US16587439

申请日：2019-09-30

Applicant: Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

Inventor： Li Diao ,  Robert George Elliston ,  David Gilbert ,  Chan-Yun Lee ,  James Paris ,  HaiAu PhanVu ,  Tom Tillery ,  Vijay Matthew Vaniapura

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  G03F7/42 ,  H01J37/32

Abstract: A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.

公开(公告)号：US20210202231A1

公开(公告)日：2021-07-01

申请号：US17120382

申请日：2020-12-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Jeyta Anand Sahay ,  Hua Chung ,  Qi Zhang

IPC: H01L21/02 ,  H01L21/311 ,  B08B7/00 ,  B08B7/04

Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., boron doped amorphous carbon hardmask) removal process on a workpiece are provided. In one example implementation, a method includes supporting a workpiece on a workpiece support in a processing chamber. The method can include generating a plasma from a process gas in a plasma chamber using a plasma source. The process gas includes a fluorine containing gas. The method can include exposing the workpiece to one or more radicals generated in the plasma to perform a plasma strip process on the workpiece to at least partially remove the hardmask layer from the workpiece. The method can include exposing the workpiece to one or more hydrogen radicals as a passivation agent during the plasma strip process.

公开(公告)号：US20210202214A1

公开(公告)日：2021-07-01

申请号：US17201081

申请日：2021-03-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

公开(公告)号：US11039527B2

公开(公告)日：2021-06-15

申请号：US16258744

申请日：2019-01-28

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  G01N21/00 ,  H01J37/32

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US20210118694A1

公开(公告)日：2021-04-22

申请号：US17071293

申请日：2020-10-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US20210066085A1

公开(公告)日：2021-03-04

申请号：US17001728

申请日：2020-08-25

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu

IPC: H01L21/3065 ,  G03F7/42 ,  H01J37/32

Abstract: Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can include exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer.