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    Method of making a semiconductor device having a process of hydrogen annealing
    23.
    发明授权
    Method of making a semiconductor device having a process of hydrogen annealing 失效
    制造具有氢退火工艺的半导体器件的方法

    公开(公告)号：US5506176A

    公开(公告)日：1996-04-09

    申请号：US159566

    申请日：1993-12-01

    申请人： Ritsuo Takizawa

    发明人： Ritsuo Takizawa

    IPC分类号： H01L27/148 ,  H01L21/322 ,  H01L21/324

    CPC分类号： H01L21/3225 ,  H01L21/324

    摘要： Not only a thermal donor (Si.sub.x O.sub.y cluster) that exists in the state presented immediately after the crystal growth but also a fine oxide precipitate, a point defect cluster or the like can be erased during the process of making a semiconductor wafer. During the slicing process of a semiconductor ingot to the rinsing process after the semiconductor wafer had been polished, preferably, after a damage caused by the lapping work or impurity had been removed by the etching work and before the semiconductor wafer is polished in the final polishing process, the semiconductor wafer is subjected to a heat treatment in a gas ambient containing hydrogen at a temperature higher than 500.degree. C., preferably at a temperature ranging from 900.degree. C. to 1250.degree. so that defects can be decomposed.

    摘要翻译： 在制造半导体晶片的过程中，不仅存在于晶体生长后立即呈现的状态，而且存在细小的氧化物沉淀物，点缺陷簇等的热供体（SixOy簇）。 在对半导体晶片进行了抛光之后的半导体晶锭的冲切处理中，优选的是，在通过蚀刻工作除去研磨作业或杂质造成的损伤之后，在最终抛光中半导体晶片被抛光之前 在半导体晶片在含有氢的气体环境中，在高于500℃，优选在900℃至1250℃的温度范围内进行热处理，从而可以使缺陷分解。

    Solid-state imaging device
    25.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US07791118B2

    公开(公告)日：2010-09-07

    申请号：US12277982

    申请日：2008-11-25

    申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

    摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

    SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
    27.
    发明申请
    SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS 有权
    固态成像装置和成像装置

    公开(公告)号：US20080246853A1

    公开(公告)日：2008-10-09

    申请号：US12061135

    申请日：2008-04-02

    申请人： Ritsuo Takizawa ,  Taichi Natori

    发明人： Ritsuo Takizawa ,  Taichi Natori

    IPC分类号： H04N5/228

    CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14627

    摘要： There is provided a solid-state imaging device including a plurality of pixels that are provided on a semiconductor substrate, and that include a plurality of photoelectric-conversion units and metal oxide semiconductor transistors that selectively read signals from the plurality of photoelectric-conversion units, an organic-photoelectric-conversion film disposed on the plurality of photoelectric-conversion units, and an organic-color-filter layer disposed on the plurality of photoelectric-conversion units. Only a signal corresponding to a first color is extracted through the organic-photoelectric-conversion film. Signals corresponding to a plurality of colors not including the first color are extracted by absorption spectroscopy using the organic-color-filter layer.

    摘要翻译： 提供了一种固态成像装置，其包括设置在半导体基板上的多个像素，并且包括选择性地从多个光电转换单元读取信号的多个光电转换单元和金属氧化物半导体晶体管， 设置在所述多个光电转换单元上的有机 - 光电转换膜以及设置在所述多个光电转换单元上的有机滤色层。 仅通过有机光电转换膜提取对应于第一颜色的信号。 通过使用有机彩色滤色层的吸收光谱法提取与不包括第一颜色的多种颜色相对应的信号。