利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

74 条记录 (耗时 0.031 秒)

    Pattern for monitoring epitaxial layer washout
    21.
    发明授权
    Pattern for monitoring epitaxial layer washout 失效
    用于监测外延层冲洗的图案

    公开(公告)号：US06770138B2

    公开(公告)日：2004-08-03

    申请号：US10047379

    申请日：2002-01-14

    申请人： Shih-Feng Huang ,  Chih-Feng Huang ,  Kuo-Su Huang

    发明人： Shih-Feng Huang ,  Chih-Feng Huang ,  Kuo-Su Huang

    IPC分类号： C30B3500

    CPC分类号： H01L23/544 ,  C30B33/00 ,  H01L2924/0002 ,  Y10T117/1004 ,  H01L2924/00

    摘要： A pattern for monitoring epitaxial layer washout is disclosed. The pattern includes first and second sub-patterns. The first sub-pattern has a shape and defines one or more minimum dimensions. Obfuscation of the first sub-pattern means that epitaxial washout has occurred at least for dimensions equal to or less than the minimum dimensions. The second sub-pattern has the same shape of the first sub-pattern, but defines one or more maximum dimensions. Obfuscation of the second sub-pattern means that epitaxial washout has occurred for dimensions equal to or less than the maximum dimensions. The sub-patterns can include a pair of separated features, such as a pair of interlocking but separated L-shaped features, the separation of which defines the dimensions of the sub-patterns.

    摘要翻译： 公开了一种用于监测外延层冲洗的图案。 该模式包括第一和第二子模式。 第一子图案具有形状并且定义一个或多个最小尺寸。 第一子图案的混淆意味着至少在尺寸等于或小于最小尺寸的情况下发生外延冲洗。 第二子图案具有与第一子图案相同的形状，但是定义一个或多个最大尺寸。 第二子图案的混淆意味着对于等于或小于最大尺寸的尺寸发生外延冲洗。 子图案可以包括一对分离的特征，例如一对互锁但分开的L形特征，其分离限定子图案的尺寸。

    P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture
    22.
    发明授权
    P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture 有权
    P型LDMOS器件采用埋层解决穿孔问题及其制造工艺

    公开(公告)号：US06475870B1

    公开(公告)日：2002-11-05

    申请号：US09910158

    申请日：2001-07-23

    申请人： Chih-Feng Huang ,  Kuo-Su Huang

    发明人： Chih-Feng Huang ,  Kuo-Su Huang

    IPC分类号： H01L21331

    CPC分类号： H01L29/1083 ,  H01L29/42368 ,  H01L29/7835

    摘要： P-type LDMOS devices have been difficult to integrate with N-type LDMOS devices without adding an extra mask because the former have been unable to achieve the same breakdown voltage as the latter due to early punch-through. This problem has been overcome by preceding the epitaxial deposition of N− silicon onto the P− substrate with an additional process step in which a buried N+ layer is formed at the surface of the substrate by ion implantation. This N+ buried layer significantly reduces the width of the depletion layer that extends outwards from the P− well when voltage is applied to the drain thus substantially raising the punch-through voltage.

    摘要翻译： P型LDMOS器件难以与N型LDMOS器件集成而不增加额外的掩模，因为前者由于早期穿通而无法实现与后者相同的击穿电压。 通过在N衬底外延沉积到P-衬底上的附加工艺步骤之前已经克服了这个问题，其中通过离子注入在衬底的表面上形成掩埋的N +层。 当电压施加到漏极时，该N +掩埋层显着地减小了从P-阱向外延伸的耗尽层的宽度，从而基本上提高穿通电压。

    Compositions of trail and DNA damaging drugs and uses thereof
    23.
    发明授权
    Compositions of trail and DNA damaging drugs and uses thereof 有权
    痕迹和DNA损伤药物的组成及其用途

    公开(公告)号：US06444640B1

    公开(公告)日：2002-09-03

    申请号：US09409336

    申请日：1999-09-30

    申请人： Motoo Nagane ,  Webster Cavenee ,  Su Huang

    发明人： Motoo Nagane ,  Webster Cavenee ,  Su Huang

    IPC分类号： A61K3800

    CPC分类号： A61K38/177 ,  A61K31/17 ,  A61K31/282 ,  A61K2300/00

    摘要： The invention relates to compositions which include both a DR5 binding ligand, such as TRAIL, and a DNA damaging agent. In combination, these two materials have unexpected efficacy in treating conditions involving rapid cellular turnover, such as cancer, where an increase in apoptosis is desired. The compositions are particularly effective in treating neoplasias and diseases involving proliferative lesions, such as glioma.

    摘要翻译： 本发明涉及包含DR5结合配体如TRAIL和DNA损伤剂的组合物。 综合起来，这两种材料在治疗涉及快速细胞周转的病症方面具有出人意料的疗效，如需要增加细胞凋亡的癌症。 组合物在治疗肿瘤和涉及增殖性病变的疾病如胶质瘤中特别有效。

    Method of forming self-aligned twin wells
    24.
    发明授权
    Method of forming self-aligned twin wells 有权
    形成自对准双孔的方法

    公开(公告)号：US06348371B1

    公开(公告)日：2002-02-19

    申请号：US09809831

    申请日：2001-03-19

    申请人： Chih-Feng Huang ,  Kuo-Su Huang ,  Shun-Liang Hsu

    发明人： Chih-Feng Huang ,  Kuo-Su Huang ,  Shun-Liang Hsu

    IPC分类号： H01L218238

    CPC分类号： H01L21/823892

    摘要： A process for forming self-aligned, twin well regions for a CMOS device, without the use of an oxidation retarding silicon nitride layer, has been developed. A first ion implantation procedure is used to place N type ions in a first portion of a semiconductor substrate, followed by a wet thermal oxidation procedure resulting in the growth of a thick silicon dioxide layer on the N type ions, in the first portion of the semiconductor substrate, while growing a thin silicon dioxide layer on a second portion of the lightly doped, P type semiconductor substrate. A second ion implantation procedure places P type ions through the thin silicon dioxide layer, into the second portion of the semiconductor substrate, while the thick silicon dioxide layer prevents the P type ions from reaching the first portion of the semiconductor substrate. A subsequent anneal procedure results in the formation of a N well region, in the first portion of the semiconductor substrate, self-aligned to the formed P well region, located in the second portion of the semiconductor substrate.

    摘要翻译： 已经开发了用于为CMOS器件形成自对准双阱区而不使用氧化阻滞氮化硅层的工艺。 使用第一离子注入程序将N型离子放置在半导体衬底的第一部分中，随后进行湿热氧化过程，导致在N型离子上生长厚二氧化硅层，在第一部分 半导体衬底，同时在轻掺杂的P型半导体衬底的第二部分上生长薄的二氧化硅层。 第二离子注入程序使P型离子通过薄二氧化硅层进入半导体衬底的第二部分，而厚二氧化硅层防止P型离子到达半导体衬底的第一部分。 随后的退火程序导致在位于半导体衬底的第二部分中的形成的P阱区自对准的半导体衬底的第一部分中的N阱区的形成。

    MANUAL/AUTOMATIC AND COLD/HOT FAUCET WITH A CERAMIC VALVE
    27.
    发明申请
    MANUAL/AUTOMATIC AND COLD/HOT FAUCET WITH A CERAMIC VALVE 有权
    手动/自动和冷/热陶瓷与陶瓷阀

    公开(公告)号：US20120248351A1

    公开(公告)日：2012-10-04

    申请号：US13074288

    申请日：2011-03-29

    申请人： Su HUANG

    发明人： Su HUANG

    IPC分类号： F16K31/02

    CPC分类号： E03C1/055 ,  F16K11/0787 ,  F16K27/045 ,  Y10T137/86831 ,  Y10T137/87281 ,  Y10T137/87692

    摘要： A manual/automatic and cold/hot faucet with a ceramic valve includes a main body adopting a ceramic valve that is connected with an automatic water exit passage and a manual water exit passage. The ceramic valve has a fixing member and a sliding member, with the sliding member sliding against the fixing member to command water to flow into the automatic water exit passage or the manual water exit passage. So the faucet can give water automatically or manually. As the ceramic valve is excellently resistant to abrasion, the present faucet can thus be durable, not apt to get leaked.

    摘要翻译： 具有陶瓷阀的手动/自动冷/热水龙头包括主体，其采用与自动出水通道和手动出水通道连接的陶瓷阀。 陶瓷阀具有固定构件和滑动构件，滑动构件滑动抵靠固定构件，以使水流入自动出水通道或手动出水通道。 所以龙头可以自动或手动给水。 由于陶瓷阀具有优异的耐磨性，因此本发明的龙头可以耐用，不容易泄漏。

    SOLAR AUTO-SENSING OUTLET VALVE WITHOUT A USE OF BATTERIES AND ADAPTED CIRCUIT STRUCTURE THEREOF
    28.
    发明申请
    SOLAR AUTO-SENSING OUTLET VALVE WITHOUT A USE OF BATTERIES AND ADAPTED CIRCUIT STRUCTURE THEREOF 审中-公开
    太阳能自动感应出口阀不使用电池和适配电路结构

    公开(公告)号：US20120246814A1

    公开(公告)日：2012-10-04

    申请号：US13074338

    申请日：2011-03-29

    申请人： Su HUANG

    发明人： Su HUANG

    IPC分类号： E03D5/10 ,  F16K31/02

    CPC分类号： E03D5/105 ,  E03C1/057 ,  H01L31/02021 ,  H02S20/00 ,  H02S40/36 ,  Y02E10/50

    摘要： A solar auto-sensing outlet valve without a use of batteries and adapted circuit structure thereof comprises at least one solar board and an outlet valve body. The solar board is disposed near a light source for converting light into electricity and is electrically connected with the outlet valve body via a guiding line, facilitating to a normal operation of a sensor and an electromagnetic valve inside the outlet valve body. For the outlet valve body, the use of batteries or an electrical connection with any commercial powers is unnecessary for reducing the energy consumption and environmental sufferings.

    摘要翻译： 不使用电池的太阳能自动检测出口阀及其适用的电路结构包括至少一个太阳能板和出口阀体。 太阳能电池板设置在光源附近，用于将光转换成电，并且经由引导线与出口阀体电连接，便于在出口阀体内部的传感器和电磁阀的正常操作。 对于出口阀体，不需要使用电池或具有任何商业电力的电气连接来减少能量消耗和环境负担。