Abstract:
A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.
Abstract:
A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.
Abstract:
A method of accessing a memory device multiple times in a same time period can include, in a first sequence of accesses, starting an access operation to one of a plurality of banks in synchronism with a first part of a first clock cycle and starting an access operation to another of the plurality of banks in synchronism with a second part of the first clock cycle, each bank having separate access circuits; and the time between consecutive accesses is faster than an access speed for back-to-back accesses to a same one of the banks; wherein during the access operations, storage locations of each bank are accessed in a same time period.
Abstract:
An integrated circuit may include at least a first replica driver stage coupled between a reference impedance input and a first power supply node and having a first programmable driver impedance set by a first driver configuration value in the same manner as a first output driver section of the integrated circuit. At least a first replica input termination stage may be coupled between the reference impedance input and the first power supply node and having a first programmable termination impedance set by a first termination configuration value in the same manner as a first input termination section of the integrated circuit. An impedance programming circuit may generate at least the first driver configuration value and the first termination configuration value in response to a potential at the reference node.
Abstract:
Embodiments of the invention relate to the testing and reduction of read disturb failures in a memory, e.g., an array of SRAM cells. A read disturb test mode may be added during wafer sort to identify any marginal memory cells that may fail read disturb, thus minimizing yield loss. The read disturb test mode may include first writing data to the memory. After a predetermined time period, the read disturb test mode reads data from the same memory, and compares the read data with the data previously written to the memory. A repair signal may be generated, when the read data is different from the data previously written to the memory. Additionally, a system may be implemented to reduce read disturb failures in the memory. The system may include a match logic circuit and a data selecting circuit. When a match condition is satisfied, data is read from a register that stores the previous written data, instead of from the memory. The match logic circuit may be selectively enabled or disabled.
Abstract:
Data paths (100 and 900) can be configured to accommodate two or four burst data sequences, with a data value being input/output each half clock cycle. A data sequence can be a fixed order or user-defined order depending upon a selected option. A data input path (100) can reduce power consumption with an enable signal (dinen) timed to activate after data input lines have settled values. A data output path (900) can access output data in a parallel fashion for subsequent output according to a burst sequence. Cycle latencies for such output data can include one clock cycle latency or one and a half-clock cycles. A data output path (900) can also accommodate various clocking modes, including: single clocking with a delay locked loop (DLL) type circuit enabled, single clocking with a delay locked loop (DLL) type circuit disabled, and double clocking, with a phase difference between an input clock and output clock of up to 180°.
Abstract:
An integrated circuit may include at least a first replica driver stage coupled between a reference impedance input and a first power supply node and having a first programmable driver impedance set by a first driver configuration value in the same manner as a first output driver section of the integrated circuit. At least a first replica input termination stage may be coupled between the reference impedance input and the first power supply node and having a first programmable termination impedance set by a first termination configuration value in the same manner as a first input termination section of the integrated circuit. An impedance programming circuit may generate at least the first driver configuration value and the first termination configuration value in response to a potential at the reference node.