公开(公告)号：US20190147017A1

公开(公告)日：2019-05-16

申请号：US16300028

申请日：2017-05-10

Applicant: Thinh Tran

Inventor： Thinh Tran

IPC: G06F17/21 ,  G06F16/9537 ,  G06Q10/10 ,  H04L29/08 ,  G06F3/0485

Abstract: A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.

公开(公告)号：US08675434B1

公开(公告)日：2014-03-18

申请号：US13459206

申请日：2012-04-29

Applicant: Morgan Whately ,  Thinh Tran

Inventor： Morgan Whately ,  Thinh Tran

IPC: G11C7/00

CPC classification number: G11C11/419 ,  G11C7/1042 ,  G11C7/22

Abstract: A memory device can include first sense amplifiers coupled to bit lines of a memory array in a first access period and de-coupled from the bit lines in a first sense period, the first sense amplifiers configured to amplify data signals from the memory array in the first sense period; and second sense amplifiers coupled to the bit lines in a second access period that follows the first access period and configured to amplify data signals from the memory cell array in a second sense period that overlaps the first sense period.

Abstract translation: 存储器件可以包括在第一访问周期中耦合到存储器阵列的位线的第一读出放大器，并且在第一读出周期中从位线去耦合，第一读出放大器被配置为放大来自存储器阵列中的数据信号 第一感觉期; 以及第二读出放大器，其在与所述第一访问周期之后的第二访问周期中耦合到所述位线，并且被配置为在与所述第一感测周期重叠的第二感测周期中放大来自所述存储单元阵列的数据信号。

公开(公告)号：US20090160475A1

公开(公告)日：2009-06-25

申请号：US12004131

申请日：2007-12-20

Applicant: Anwar Ali ,  Thinh Tran ,  Wilson Choi

Inventor： Anwar Ali ,  Thinh Tran ,  Wilson Choi

IPC: G01R31/26 ,  G06F17/50

CPC classification number: G01R31/2884 ,  G06F2217/40 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/50 ,  H01L2224/16225

Abstract: An apparatus and method for reducing the number of package pins in a chip package which must be budgeted for test purposes. In one embodiment, the invention achieves this by housing test balls in the depopulated center of a package ball array. The test balls are used to test a chip package prior to connection with a printed wiring board (PWB)/printed circuit board (PCB). After tests are completed, and when the chip package is connected to a PWB/PCB, the test balls may be left electrically isolated and unconnected. In another embodiment, the test balls are located in previously unused interstitial sites in a package ball array.

Abstract translation: 一种用于减少芯片封装中的封装引脚数量的装置和方法，其必须用于测试目的。 在一个实施例中，本发明通过将测试球容纳在包装球阵列的减排中心来实现。 测试球用于在与印刷电路板（PWB）/印刷电路板（PCB）连接之前测试芯片封装。 测试完成后，当芯片封装连接到PWB / PCB时，测试球可能会被电隔离和未连接。 在另一个实施例中，测试球位于包装球阵列中的先前未使用的间隙位置。

公开(公告)号：US07196925B1

公开(公告)日：2007-03-27

申请号：US10927583

申请日：2004-08-26

Applicant: Joseph Tzou ,  Jithender Majjiga ,  Morgan Whately ,  Thinh Tran

Inventor： Joseph Tzou ,  Jithender Majjiga ,  Morgan Whately ,  Thinh Tran

IPC: G11C11/00

CPC classification number: G11C11/413

Abstract: A memory device can include a group of memory cells, which can be arranged in a column (100) that receives power by way of a first cell supply nodes (106-0 to 106-m). A current limiter (110) can be situated between first cell supply nodes (106-0 to 106-m) and a power supply (VH), and limit a current (llimit) to less than a latch-up holding current (lhold_lu) for the group of memory cells (100). In a particle event, such as an α-particle strike, a current limiter (110) can prevent a latch-up holding current (lhold_lu) from developing, thus preventing latch-up from occurring. Current limiter (110) can include p-channel transistors and/or resistors, and thus consume a relatively small area of the memory device.

Abstract translation: 存储器设备可以包括一组存储器单元，其可以被布置在通过第一单元电源节点（106-0至106-m）接收电力的列（100）中。 电流限制器（110）可以位于第一单元电源节点（106-0至106-m）和电源（VH）之间，并将电流（限制）限制为小于闭锁保持电流（lhold_lu） 用于存储单元组（100）。 在诸如α粒子撞击的粒子事件中，限流器（110）可以防止闩锁保持电流（lhold_lu）发展，从而防止发生闩锁。 限流器（110）可以包括p沟道晶体管和/或电阻器，因此消耗存储器件的相对小的面积。

公开(公告)号：US07142477B1

公开(公告)日：2006-11-28

申请号：US10871825

申请日：2004-06-18

Applicant: Thinh Tran ,  Joseph Tzou ,  Suresh Parameswaran

Inventor： Thinh Tran ,  Joseph Tzou ,  Suresh Parameswaran

IPC: G11C8/00

CPC classification number: G11C11/417 ,  G11C7/1066 ,  G11C8/18

Abstract: A memory interface system and method are provided for transferring data between a memory controller and an array of storage elements. The storage elements are preferably SRAM elements, and the memory interface is preferably one having separate address bus paths and separate data bus paths. One address bus path is reserved for receiving read addresses and the other address bus path is reserved for receiving write addresses. One of the data bus paths is reserved for receiving read data from the array, and the other data bus path is reserved for receiving data written to the array. While bifurcating the address and data bus paths within the interface is transparent to the memory controller, the separate paths afford addressing phases of a read and write address operation to be partially overlapped, as well as the data transfer phases. This will essentially reduce the cycle time between a read and write memory access, and proves useful when maximizing the data throughput across the data bus when implementing double data rate (QDR) mechanisms.

Abstract translation: 提供了一种用于在存储器控制器和存储元件阵列之间传送数据的存储器接口系统和方法。 存储元件优选地是SRAM元件，并且存储器接口优选地具有分离的地址总线路径和单独的数据总线路径。 保留一个地址总线路径用于接收读取地址，另一个地址总线路径被保留用于接收写入地址。 数据总线路径之一被保留用于从阵列接收读取数据，另一条数据总线路径被保留用于接收写入阵列的数据。 虽然分区接口内的地址和数据总线路径对于存储器控制器是透明的，但是单独的路径提供读取和写入地址操作的寻址阶段以部分重叠，以及数据传输阶段。 这将实质上减少读写存储器访问之间的周期时间，并且在实现双数据速率（QDR）机制时在数据总线上最大化数据吞吐量时被证明是有用的。

公开(公告)号：US11137878B2

公开(公告)日：2021-10-05

申请号：US16988413

申请日：2020-08-07

Applicant: Thinh Tran

Inventor： Thinh Tran

IPC: G06F3/0481 ,  G06Q50/00 ,  G06F16/9537 ,  G06F3/0485 ,  H04L12/58

Abstract: A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.

公开(公告)号：US20110016374A1

公开(公告)日：2011-01-20

申请号：US12838035

申请日：2010-07-16

Applicant: Edward L. Grivna ,  Gabriel Li ,  Thinh Tran

Inventor： Edward L. Grivna ,  Gabriel Li ,  Thinh Tran

IPC: H03M13/05 ,  G06F11/10

CPC classification number: G06F13/4291 ,  G06F11/1016

Abstract: A serial interface device may include a plurality of serial link connections that receive at least address values and at least one error detection code (EDC) on different serial link connections, the EDC generated from at least the address values.

Abstract translation: 串行接口设备可以包括多个串行链路连接，其至少在不同的串行链路连接上接收地址值和至少一个错误检测码（EDC），EDC至少从地址值生成。

公开(公告)号：US07403446B1

公开(公告)日：2008-07-22

申请号：US11237378

申请日：2005-09-27

Applicant: Suresh Parameswaran ,  Thinh Tran ,  Joseph Tzou

Inventor： Suresh Parameswaran ,  Thinh Tran ,  Joseph Tzou

IPC: G11C7/00 ,  G11C8/00

CPC classification number: G11C11/419 ,  G11C7/1072 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C7/1096 ,  G11C7/22 ,  G11C8/18

Abstract: Synchronous SRAM may conform to Std. Sync or early-write at an external interface whilst providing late-write internally.

Abstract translation: 同步SRAM可以符合标准 在外部接口同步或提前写入，同时在内部提供后期写入。

公开(公告)号：US07269772B1

公开(公告)日：2007-09-11

申请号：US10785826

申请日：2004-02-23

Applicant: Jun Li ,  Joseph Tzou ,  Thinh Tran

Inventor： Jun Li ,  Joseph Tzou ,  Thinh Tran

IPC: G01R31/28

CPC classification number: G01R31/3187 ,  G01R31/31725

Abstract: An integrated circuit device (200) can include a main portion (204) and a built-in self-test (BIST) portion (204) having outputs coupled to physical input structures (e.g., bond pads) (206) of the integrated circuit device (200). A BIST portion (202) can test timing critical parameters that take into account the effect of input structures (206). A BIST portion (202) can apply BIST test signals with a pipeline structure that can emulate timing parameters, such as a set-up time (Ts) and a clock-to-output time (Tco).

Abstract translation: 集成电路装置（200）可以包括主要部分（204）和内置自检（BIST）部分（204），其具有耦合到集成电路的物理输入结构（例如，接合焊盘）（206）的输出 装置（200）。 BIST部分（202）可以测试考虑到输入结构（206）的影响的时序关键参数。 BIST部分（202）可以应用具有可以模拟定时参数（诸如建立时间（Ts））和时钟到输出时间（Tco）的流水线结构的BIST测试信号。

公开(公告)号：US20220057915A1

公开(公告)日：2022-02-24

申请号：US17404801

申请日：2021-08-17

Applicant: Thinh Tran

Inventor： Thinh Tran

IPC: G06F3/0481 ,  G06F3/0485 ,  G06F21/44

Abstract: An orthogonal or multi-dimensional fabric user interface is described herein. A remote server executes an operating system that provides a multi-dimensional fabric for storing content for a particular user. The user can access select content by manipulating the multi-dimensional fabric through a graphical user interface displayed on a display device. In this way, the user experiences and manipulates various data dimensions around the specific content they are accessing, rather than selecting a particular file structure location.