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21.
公开(公告)号:US11942566B2
公开(公告)日:2024-03-26
申请号:US17347314
申请日:2021-06-14
申请人: Utica Leaseco, LLC
发明人: Yan Zhu , Sean Sweetnam , Brendan M. Kayes , Melissa J. Archer , Gang He
IPC分类号: H01L33/00 , H01L31/0216 , H01L31/0236 , H01L31/056 , H01L31/18 , H01L33/22 , H01L33/30 , H01L33/42 , H01L33/44 , H01L33/46
CPC分类号: H01L33/0093 , H01L31/02168 , H01L31/02366 , H01L31/056 , H01L31/1892 , H01L33/0062 , H01L33/22 , H01L33/30 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2933/0016 , H01L2933/0025 , H01L2933/0091 , Y02E10/52
摘要: A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.
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公开(公告)号:US11387681B2
公开(公告)日:2022-07-12
申请号:US15809576
申请日:2017-11-10
申请人: UTICA LEASECO, LLC
发明人: Gang He , Brendan Kayes , Christopher France
摘要: A charging device configured to charge a mobile device through the solar cells integrated on the mobile device. The charging device converts wall power to light energy which can be absorbed by the solar cells and then converted to electricity for storage in the rechargeable battery of the mobile device. The charging device includes a light source configured to emit a light beam having a spectrum tuned to the spectral response of the solar cells. The charging device includes a proximity sensor for detecting the presence of a mobile device within the charging device housing and responsively signaling the activation of the light source. The charging device includes logic for wirelessly communicating with the mobile device as well as controlling the charging process in various stages and aspects. The light source may be LEDs that also serve to transmit light communication signals to the mobile device.
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公开(公告)号:US20220173260A1
公开(公告)日:2022-06-02
申请号:US17675761
申请日:2022-02-18
申请人: Utica Leaseco, LLC
发明人: Linlin YANG , Liguang LAN , Chris FRANCE , Gang HE , Erhong LI , Jose CORBACHO
IPC分类号: H01L31/0224 , H01L31/05 , H01L31/0693 , H01L31/0445 , H01L31/0304 , H01L31/048 , H01L31/18
摘要: System and method of providing a photovoltaic (PV) cell having a cushion layer to alleviate stress impact between a front metal contact and a thin film PV layer. A cushion layer is disposed between an extraction electrode and a photovoltaic (PV) surface. The cushion layer is made of a nonconductive material and has a plurality of vias filled with a conductive material to provide electrical continuity between the bus bar and the PV layer. The cushion layer may be made of a flexible material preferably with rigidity that matches the substrate. Thus, the cushion layer can effectively protect the PV layer from physical damage due to tactile contact with the front metal contact.
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公开(公告)号:US20220090275A1
公开(公告)日:2022-03-24
申请号:US17472075
申请日:2021-09-10
申请人: Utica Leaseco, LLC
IPC分类号: C25B9/30 , C25B11/034 , C25B1/01 , C25B11/061 , C25B11/075 , C25B15/08
摘要: A system and method for generating arsine are disclosed. The system may include a shell having a top interior surface. The system may also include a cathode-anode assembly positioned in the shell and forming an elongated structure substantially parallel to the top surface. The cathode-anode assembly may include a first electrode and a second electrode surrounding the first electrode and forming a gap therebetween. The second electrode may include a plurality of channels along a length of the second electrode. The plurality of channels may allow circulation of electrolyte within and around at least a portion of the cathode-anode assembly and allow gases generated in response to current applied to the cathode-anode assembly to escape from the cathode-anode assembly. Such gases may be used as precursor gases for a high-volume metal-organic chemical vapor deposition (MOCVD) operation.
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公开(公告)号:US11271121B2
公开(公告)日:2022-03-08
申请号:US16373305
申请日:2019-04-02
申请人: UTICA LEASECO, LLC
发明人: Octavi Santiago Escala Semonin , Daniel Guilford Patterson , Reto Adrian Furler , Andrew James Ritenour
IPC分类号: H01L31/02 , H01L31/0236 , H01L31/0304 , H01L31/056 , H01L31/18
摘要: A photovoltaic device and a method of making the photovoltaic device are disclosed. The photovoltaic device may include a semiconductor layer epitaxially grown using a compound semiconductor material, such as a group III-V semiconductor material, wherein a surface of the semiconductor layer is textured via one or more laser pulses of a laser. The photovoltaic device may also include a dielectric layer deposited over the textured surface of the semiconductor layer, and a back metal reflector provided on the dielectric layer. The textured surface extends a path of light traveling through the photovoltaic device to increase absorption of the light within the photovoltaic device.
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公开(公告)号:US20220069141A1
公开(公告)日:2022-03-03
申请号:US17459032
申请日:2021-08-27
申请人: Utica Leaseco, LLC
发明人: Todd Allen KRAJEWSKI
IPC分类号: H01L31/02 , H01L31/0392 , H01L31/18
摘要: The present disclosure relates to electrical connections between shingled solar cells in a solar cell assembly. More particularly, the present disclosure describes the use of low temperature metallic interconnects that reduce resistivity between solar cells and assembly time. In an aspect, an assembly of shingled solar cells is described that includes a first solar cell having an insulating film on a back side, the insulating film having vias that expose a back metal layer of the first solar cell, and a second solar cell having a bus bar on a front side. In this assembly, the back metal layer of the first solar cell is electrically connected to the bus bar of the second solar cell through multiple electrical connections formed by low temperature solder that fills the vias in the insulating film of the first solar cell. A method of fabricating or manufacturing the assembly is also described.
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公开(公告)号:US11257978B2
公开(公告)日:2022-02-22
申请号:US16370473
申请日:2019-03-29
申请人: UTICA LEASECO, LLC
IPC分类号: H01L31/18 , H01L31/06 , H01L31/02 , H01L31/0224 , H01L31/0693 , H01L31/20 , H01L31/0735
摘要: A photovoltaic device and a method of forming a contact stack of the photovoltaic device are disclosed. The photovoltaic device may include a first layer deposited on a semiconductor layer including a compound semiconductor material. The photovoltaic device may also include a dopant layer comprising tin (Sn) deposited on the first layer. The photovoltaic device may further include a conductive layer deposited or provided over the dopant layer to form a contact stack with the first layer and the dopant layer.
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公开(公告)号:US11257965B2
公开(公告)日:2022-02-22
申请号:US16427142
申请日:2019-05-30
申请人: Utica Leaseco, LLC
发明人: Linlin Yang , Liguang Lan , Chris France , Gang He , Erhong Li , Jose Corbacho
IPC分类号: H01L31/0224 , H01L31/05 , H01L31/0693 , H01L31/0445 , H01L31/0304 , H01L31/048 , H01L31/18
摘要: System and method of providing a photovoltaic (PV) cell having a cushion layer to alleviate stress impact between a front metal contact and a thin film PV layer. A cushion layer is disposed between an extraction electrode and a photovoltaic (PV) surface. The cushion layer is made of a nonconductive material and has a plurality of vias filled with a conductive material to provide electrical continuity between the bus bar and the PV layer. The cushion layer may be made of a flexible material preferably with rigidity that matches the substrate. Thus, the cushion layer can effectively protect the PV layer from physical damage due to tactile contact with the front metal contact.
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公开(公告)号:US20210391494A1
公开(公告)日:2021-12-16
申请号:US17459611
申请日:2021-08-27
申请人: Utica Leaseco, LLC
IPC分类号: H01L31/18 , H01L31/0216 , H01L31/0304 , H01L31/054 , H01L31/0735 , H01L31/0725 , H01L31/056 , H01L31/0687
摘要: A method is described that includes sputtering multiple layers on a back surface of the photovoltaic structure, the photovoltaic structure being made of at least one group III-V semiconductor material, and evaporating, over the multiple layers, one or more additional layers including a metal layer, the back metal structure being formed by the multiple layers and the additional layers. A photovoltaic device is also described that includes a back metal structure disposed over a back surface of a photovoltaic structure made of a group III-V semiconductor material, the back metal structure including one or more evaporated layers disposed over multiple sputtered layers, the one or more evaporated layers including a metal layer. By allowing evaporation along with sputtering, tool size and costs can be reduced, including minimizing a number of vacuum breaks. Moreover, good yield and reliability, such as reducing dark line defects (DLDs), can also be achieved.
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公开(公告)号:US11075313B2
公开(公告)日:2021-07-27
申请号:US16657765
申请日:2019-10-18
申请人: UTICA LEASECO, LLC
发明人: Nikhil Jain , Andrew J. Ritenour , Ileana Rau , Claudio Canizares , Lori D. Washington , Gang He , Brendan M. Kayes
IPC分类号: H01L21/00 , H01L31/0725 , H01L31/0687 , H01L31/076 , H01L31/18 , H01L31/0236 , H01L31/056 , H01L31/0735 , H01L31/054
摘要: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.
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