公开(公告)号：US08107202B2

公开(公告)日：2012-01-31

申请号：US12345733

申请日：2008-12-30

申请人： Wen-yaung Lee ,  Chang Man Park ,  Brian R. York ,  Alexander M. Zeltser

发明人： Wen-yaung Lee ,  Chang Man Park ,  Brian R. York ,  Alexander M. Zeltser

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.

摘要翻译： 一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。

公开(公告)号：US07848064B2

公开(公告)日：2010-12-07

申请号：US12172134

申请日：2008-07-11

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/12 ,  Y10T428/1121

摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

摘要翻译： 反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。 反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。 间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。 间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。 该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

公开(公告)号：US07408747B2

公开(公告)日：2008-08-05

申请号：US11048406

申请日：2005-02-01

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/12 ,  Y10T428/1121

摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

摘要翻译： 反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。 反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。 间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。 间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。 该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

公开(公告)号：US20080137236A1

公开(公告)日：2008-06-12

申请号：US11638271

申请日：2006-12-12

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Brian R. York

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Brian R. York

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163

摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1-x)(x=0.22-0.5) alloys, Ru(x)Cr(1-x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.

摘要翻译： 公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。 读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上部种子层 其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。 在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。 还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。

公开(公告)号：US20060171083A1

公开(公告)日：2006-08-03

申请号：US11048406

申请日：2005-02-01

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/12 ,  Y10T428/1121

摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

摘要翻译： 反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。 反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。 间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。 间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。 该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

公开(公告)号：US6141191A

公开(公告)日：2000-10-31

申请号：US986311

申请日：1997-12-05

申请人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  Robert John Wilson

发明人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  Robert John Wilson

IPC分类号： G01R33/09 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996

摘要： An SV sensor with the preferred structure Substrate/Seed/Free/Spacer/Pinned/AFM/Cap where the seed layer is a non-magnetic Ni--Fe--Cr or Ni--Cr film and the AFM layer is preferably Ni--Mn. The non-magnetic Ni--Fe--Cr seed layer results in improved grain structure in the deposited layers enhancing the GMR coefficients and the thermal stability of the SV sensors. The improved thermal stability enables use of Ni--Mn with its high blocking temperature and strong pinning field as the AFM layer material without SV sensor performance degradation from the high temperature anneal step needed to develop the desired exchange coupling.

摘要翻译： 具有优选结构的SV传感器，其中种子层是非磁性Ni-Fe-Cr或Ni-Cr膜，AFM层优选为Ni-Mn，其中底物/种子/自由/间隔物/固定/ AFM /帽。 非磁性Ni-Fe-Cr种子层导致沉积层中改善的晶粒结构增强了GMR系数和SV传感器的热稳定性。 改进的热稳定性使得具有高阻挡温度和强钉扎场的Ni-Mn作为AFM层材料而不会由于开发所需交换耦合所需的高温退火步骤而降低SV传感器性能。

公开(公告)号：US20090257152A1

公开(公告)日：2009-10-15

申请号：US12345733

申请日：2008-12-30

申请人： Wen-yaung Lee ,  Chang Man Park ,  Brian R. York ,  Alexander M. Zeltser

发明人： Wen-yaung Lee ,  Chang Man Park ,  Brian R. York ,  Alexander M. Zeltser

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.

摘要翻译： 一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。

公开(公告)号：US20080285182A1

公开(公告)日：2008-11-20

申请号：US12172134

申请日：2008-07-11

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/12 ,  Y10T428/1121

摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

摘要翻译： 反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。 反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。 间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。 间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。 该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

公开(公告)号：US07196878B2

公开(公告)日：2007-03-27

申请号：US10788727

申请日：2004-02-27

申请人： Ciaran Avram Fox ,  Hardayal Singh Gill ,  Prakash Kasiraj ,  Wen-Yaung Lee ,  Mustafa Michael Pinarbasi

发明人： Ciaran Avram Fox ,  Hardayal Singh Gill ,  Prakash Kasiraj ,  Wen-Yaung Lee ,  Mustafa Michael Pinarbasi

IPC分类号： G11B5/39

CPC分类号： G11B5/33 ,  G11B5/1272

摘要： A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.

摘要翻译： 自固定型的自旋阀（SV）传感器包括一个或多个压缩应力修改层，用于降低钉扎场将翻转其方向的可能性。 自旋阀传感器包括形成在自旋阀结构上的覆盖层，其包括自由层，反平行（AP）自固定层结构以及位于自由层和AP自固位层结构之间的间隔层。 在封盖层的上方或下方形成压应力改性层，邻近AP自固化层结构或两者。 优选地，压应力改性层由钌（Ru）或其它合适的材料制成。

公开(公告)号：US20060226940A1

公开(公告)日：2006-10-12

申请号：US11244618

申请日：2005-10-05

申请人： Wen-yaung Lee ,  Jinshan Li

发明人： Wen-yaung Lee ,  Jinshan Li

IPC分类号： H01F6/00

CPC分类号： H01F6/00 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3909 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F13/00 ,  H01F27/365 ,  H01L43/12

摘要： A method for constructing a magnetoresistive sensor using a horizontally disposed superconducting magnetic tool. The superconducting magnetic tool is capable of generating very high magnetic fields for sustained periods of time to effectively set the magnetizations of magnetoresitive sensors having a very high pinning field. The supermagnetic tool has a ceramic tube surrounded by a superconducting coil. The tube has a longitudinal axis that is oriented horizontally, thereby providing numerous important benefits, such as: facilitating manipulation of the sensor containing wafer within the tool; facilitating loading of the wafer into the tool; preventing temperature and field gradients within the wafer during the anneal; and facilitating maintenance and storage of the tool by limiting the height of the tool.

摘要翻译： 一种使用水平布置的超导磁性工具构造磁阻传感器的方法。 超导磁性工具能够在持续的时间段内产生非常高的磁场，以有效地设置具有非常高的钉扎场的磁阻传感器的磁化。 超磁性工具具有由超导线圈包围的陶瓷管。 管具有水平定向的纵向轴线，从而提供许多重要的益处，例如：便于在工具内操纵含传感器的晶片; 便于将晶片装载到工具中; 在退火期间防止晶片内的温度和场梯度; 并且通过限制工具的高度来促进工具的维护和储存。