公开(公告)号：US09520302B2

公开(公告)日：2016-12-13

申请号：US14934547

申请日：2015-11-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Jungmin Ko ,  Sean Kang ,  Kwang-Soo Kim ,  Olivier Luere

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of processing a substrate includes depositing an oxide material on a substrate having a first region, a second region and a plurality of features, wherein the first region has a high feature density and the second region has a low feature density; and controlling a ratio of an etch rate of the oxide material in the first region to an etch rate of the oxide material in the second region by forming an ammonium hexafluorosilicate ((NH4)2SiF6) layer having a first thickness atop the oxide material in the first region and having a second thickness atop the oxide material in the second region.

Abstract translation: 一种处理衬底的方法包括在具有第一区域，第二区域和多个特征的衬底上沉积氧化物材料，其中第一区域具有高特征密度，第二区域具有低特征密度; 以及通过在所述第二区域中形成具有在所述氧化物材料的顶部的第一厚度的六氟硅酸铵（（NH 4）2 SiF 6））来控制所述第一区域中的氧化物材料的蚀刻速率与所述氧化物材料的蚀刻速率的比率 并且在第二区域中具有位于氧化物材料上方的第二厚度。

公开(公告)号：US20150214337A1

公开(公告)日：2015-07-30

申请号：US14164786

申请日：2014-01-27

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L29/66795 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6875 ,  H01L29/66818

Abstract: Embodiments of the present invention may include a semiconductor patterning method involving forming a fin on a substrate, where the fin may have a sloped sidewall. The fin may be characterized by an initial height and a first width measured proximate a midpoint of the initial height. The method may include forming a masking layer above the fin, and the method may involve removing a first portion of the masking layer. The method may include decreasing the first width of the fin while maintaining the initial height.

Abstract translation: 本发明的实施例可以包括半导体图案化方法，其包括在基底上形成翅片，其中翅片可以具有倾斜的侧壁。 翅片的特征在于初始高度和在初始高度的中点附近测量的第一宽度。 该方法可以包括在翅片上形成掩模层，并且该方法可以包括去除掩模层的第一部分。 该方法可以包括在保持初始高度的同时减小翅片的第一宽度。