公开(公告)号：US09520302B2

公开(公告)日：2016-12-13

申请号：US14934547

申请日：2015-11-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Jungmin Ko ,  Sean Kang ,  Kwang-Soo Kim ,  Olivier Luere

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of processing a substrate includes depositing an oxide material on a substrate having a first region, a second region and a plurality of features, wherein the first region has a high feature density and the second region has a low feature density; and controlling a ratio of an etch rate of the oxide material in the first region to an etch rate of the oxide material in the second region by forming an ammonium hexafluorosilicate ((NH4)2SiF6) layer having a first thickness atop the oxide material in the first region and having a second thickness atop the oxide material in the second region.

Abstract translation: 一种处理衬底的方法包括在具有第一区域，第二区域和多个特征的衬底上沉积氧化物材料，其中第一区域具有高特征密度，第二区域具有低特征密度; 以及通过在所述第二区域中形成具有在所述氧化物材料的顶部的第一厚度的六氟硅酸铵（（NH 4）2 SiF 6））来控制所述第一区域中的氧化物材料的蚀刻速率与所述氧化物材料的蚀刻速率的比率 并且在第二区域中具有位于氧化物材料上方的第二厚度。

公开(公告)号：US10600639B2

公开(公告)日：2020-03-24

申请号：US16036635

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.

公开(公告)号：US11437242B2

公开(公告)日：2022-09-06

申请号：US16201724

申请日：2018-11-27

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Kwang-Soo Kim ,  Thomas Choi ,  Nitin Ingle

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/67

Abstract: Exemplary methods of etching semiconductor substrates may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having an exposed region of a first silicon-containing material and an exposed region of a second silicon-containing material. The second silicon-containing material may be exposed within a recessed feature defined by the substrate. The methods may include flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the semiconductor processing chamber to generate plasma effluents of the fluorine-containing precursor and the silicon-containing precursor. The methods may include contacting the substrate with the plasma effluents. The methods may include removing at least a portion of the second silicon-containing material.

公开(公告)号：US20180323075A1

公开(公告)日：2018-11-08

申请号：US16036635

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.

公开(公告)号：US10026621B2

公开(公告)日：2018-07-17

申请号：US15350803

申请日：2016-11-14

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02326 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3115

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.

公开(公告)号：US20200168463A1

公开(公告)日：2020-05-28

申请号：US16201724

申请日：2018-11-27

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Kwang-Soo Kim ,  Tom Choi ,  Nitin Ingle

IPC: H01L21/3065 ,  H01L21/308

Abstract: Exemplary methods of etching semiconductor substrates may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having an exposed region of a first silicon-containing material and an exposed region of a second silicon-containing material. The second silicon-containing material may be exposed within a recessed feature defined by the substrate. The methods may include flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the semiconductor processing chamber to generate plasma effluents of the fluorine-containing precursor and the silicon-containing precursor. The methods may include contacting the substrate with the plasma effluents. The methods may include removing at least a portion of the second silicon-containing material.

公开(公告)号：US20180138049A1

公开(公告)日：2018-05-17

申请号：US15350803

申请日：2016-11-14

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0223

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.