公开(公告)号：US20230017035A1

公开(公告)日：2023-01-19

申请号：US17844181

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Thai Cheng Chua ,  Christian W. Valencia ,  Joung Joo Lee ,  Xianmin Tang ,  Xiao Chen

IPC: C23C16/27 ,  C23C16/56 ,  C23C16/511 ,  C23C16/52

Abstract: A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.

公开(公告)号：US20220319812A1

公开(公告)日：2022-10-06

申请号：US17840500

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Hanh Nguyen ,  Thai Cheng Chua ,  Philip Allan Kraus

IPC: H01J37/32

Abstract: Embodiments described herein include a processing tool that comprises a processing chamber, a chuck for supporting a substrate in the processing chamber, a dielectric window forming a portion of the processing chamber, and a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source comprises a plurality of high-frequency emission modules. In an embodiment, each high-frequency emission module comprises, an oscillator module, amplification module, and an applicator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, the applicator is positioned proximate to the dielectric window.

公开(公告)号：US20220254641A1

公开(公告)日：2022-08-11

申请号：US17174224

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Christian Valencia ,  Chikuang Wang ,  Bencherki Mebarki ,  Hanh Nguyen ,  Philip Allan Kraus

IPC: H01L21/285 ,  H01L23/532 ,  H01J37/32 ,  C23C16/26 ,  C23C16/02 ,  C23C16/511

Abstract: Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma chamber, and flowing a carbon source and a hydrogen source into the modular microwave plasma chamber. In an embodiment, the method further comprises striking a plasma in the modular microwave plasma chamber, where a substrate temperature is below approximately 400° C., and depositing the graphene layer on the substrate.

公开(公告)号：US20210183621A1

公开(公告)日：2021-06-17

申请号：US17164703

申请日：2021-02-01

Applicant: Applied Materials, Inc.

Inventor： Hanh Nguyen ,  Thai Cheng Chua ,  Philip Allan Kraus

IPC: H01J37/32

Abstract: Embodiments described herein include an applicator frame for a processing chamber. In an embodiment, the applicator frame comprises a first major surface of the applicator frame and a second major surface of the applicator frame opposite the first major surface. In an embodiment, the applicator frame further comprises a through hole, wherein the through hole extends entirely through the applicator frame. In an embodiment, the applicator frame also comprises a lateral channel embedded in the applicator frame. In an embodiment the lateral channel intersects the through hole.

公开(公告)号：US10937678B2

公开(公告)日：2021-03-02

申请号：US16714144

申请日：2019-12-13

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Jaeyong Cho

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/223 ,  H01L21/02 ,  H01J37/00

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US20200303167A1

公开(公告)日：2020-09-24

申请号：US16895904

申请日：2020-06-08

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Christian Amormino ,  Dmitry A. Dzilno

IPC: H01J37/32 ,  H01Q3/34 ,  H01Q21/00 ,  H03B5/24

Abstract: Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.

公开(公告)号：US10748745B2

公开(公告)日：2020-08-18

申请号：US15238695

申请日：2016-08-16

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/511

Abstract: Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

公开(公告)号：US10510575B2

公开(公告)日：2019-12-17

申请号：US15710753

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Jaeyong Cho

IPC: H01L21/683 ,  H01J37/00 ,  H01L21/687 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/223 ,  H01L21/02

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US12300497B2

公开(公告)日：2025-05-13

申请号：US17174224

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Christian Valencia ,  Chikuang Wang ,  Bencherki Mebarki ,  Hanh Nguyen ,  Philip Allan Kraus

IPC: C23C16/00 ,  C23C16/02 ,  C23C16/26 ,  C23C16/511 ,  H01J37/32 ,  H01L21/285

Abstract: Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma chamber, and flowing a carbon source and a hydrogen source into the modular microwave plasma chamber. In an embodiment, the method further comprises striking a plasma in the modular microwave plasma chamber, where a substrate temperature is below approximately 400° C., and depositing the graphene layer on the substrate.

公开(公告)号：US20250043413A1

公开(公告)日：2025-02-06

申请号：US18228555

申请日：2023-07-31

Applicant: Applied Materials, Inc.

Inventor： Sze Chieh Yvonne Tan ,  Vicknesh Sahmuganathan ,  John Sudijono ,  Philip Allan Kraus ,  Christian Valencia ,  Thai Cheng Chua

IPC: C23C16/27 ,  C23C16/02 ,  C23C16/511 ,  C23C16/52

Abstract: Embodiments include a modular high-frequency emission source for growth of a low roughness nanocrystalline diamond film. In an embodiment, a method of fabricating a nanocrystalline diamond (NCD) film includes loading a nanodiamond-seeded silicon wafer or a bare silicon wafer that has been surface-treated and incubated into a microwave plasma-enhanced chemical vapor deposition (MWPECVD) chamber, and processing the nanodiamond-seeded silicon wafer or the bare silicon wafer that has been surface-treated and incubated with a plasma of CxHy (y≥x), CO2 and H2, at power greater than 50 W, to form a layer of nanocrystalline diamond thereon.