公开(公告)号：US20240363317A1

公开(公告)日：2024-10-31

申请号：US18138811

申请日：2023-04-25

申请人： Applied Materials, Inc.

发明人： Vicknesh Sahmuganathan ,  Sze Chieh Tan ,  Kok Keong Lim ,  Song Seng Low ,  Yi Kun Kelvin Goh ,  Abdul Rahman Bin Abu Bakar ,  Syed Muhammad Darwis ,  Cheng Hong Tan ,  John Sudijono ,  Han Yan Koh

IPC分类号： H01J37/32 ,  C23C16/511 ,  C23C16/56 ,  H01L21/02

CPC分类号： H01J37/32862 ,  C23C16/511 ,  C23C16/56 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32816 ,  H01L21/02274 ,  H01J2237/332

摘要： Methods and apparatus for cleaning a dielectric tube are described. The dielectric tube is exposed to a cleaning gas comprising a fluorine-containing compound and a microwave plasma is generated. The dielectric tube is cleaned to restore transparency and increase electronic coupling between the microwave waveguide and the plasma through the dielectric tube.

公开(公告)号：US20240271272A1

公开(公告)日：2024-08-15

申请号：US18635639

申请日：2024-04-15

申请人： Applied Materials, Inc.

发明人： Yong Wang ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/56 ,  C23C22/77 ,  C23C22/82

CPC分类号： C23C16/0227 ,  C23C16/04 ,  C23C16/56 ,  C23C22/77 ,  C23C22/82

摘要： Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

公开(公告)号：US11946134B2

公开(公告)日：2024-04-02

申请号：US17585755

申请日：2022-01-27

申请人： Applied Materials, Inc.

发明人： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  John Sudijono

IPC分类号： C23C16/27 ,  C23C16/02 ,  C23C16/455 ,  B82Y40/00

CPC分类号： C23C16/279 ,  C23C16/0227 ,  C23C16/45536 ,  B82Y40/00

摘要： Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.

公开(公告)号：US20230402285A1

公开(公告)日：2023-12-14

申请号：US17839809

申请日：2022-06-14

申请人： Applied Materials, Inc.

发明人： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC分类号： H01L21/033

CPC分类号： H01L21/0337 ,  H01L21/0332

摘要： Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD). The carbon-containing film may act as an etch protection layer or an etch resistance layer for the sidewall of the nanostructures. When no etch is performed, the carbon-containing film may act as a liner material.

公开(公告)号：US20230207314A1

公开(公告)日：2023-06-29

申请号：US17562441

申请日：2021-12-27

申请人： Applied Materials, Inc.

发明人： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  Supriya Ghosh ,  Jiecong Tang ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC分类号： H01L21/02

CPC分类号： H01L21/02565 ,  H01L21/02614

摘要： Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

公开(公告)号：US20240352621A1

公开(公告)日：2024-10-24

申请号：US18137069

申请日：2023-04-20

申请人： Applied Materials, Inc.

发明人： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Christian W. Valencia ,  Thai Cheng Chua ,  Masahiro Kawasaki ,  Jenn-Yue Wang ,  John Sudijono

IPC分类号： C30B29/04 ,  C30B25/10 ,  C30B25/18

CPC分类号： C30B29/04 ,  C30B25/10 ,  C30B25/186

摘要： Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.

公开(公告)号：US20240183035A1

公开(公告)日：2024-06-06

申请号：US17991931

申请日：2022-11-22

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Long Liu

IPC分类号： C23C16/455 ,  C23C16/02 ,  C23C16/04

CPC分类号： C23C16/45553 ,  C23C16/0272 ,  C23C16/045

摘要： Methods of selectively depositing a selectively deposited layer are described. Exemplary processing methods may include treating a substrate comprising a non-hydroxyl-containing surface and a second surface with one or more of ozone, hydrogen peroxide, or a hydrogen plasma to passivate the second surface. In one or more embodiments, a selectively deposited layer is then selectively deposited on the non-hydroxyl-containing surface and not on the second surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the non-hydroxyl-containing surface and not on the second surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial selectively deposited layer. The methods may include removing a second precursor effluent from the substrate.

公开(公告)号：US11894230B2

公开(公告)日：2024-02-06

申请号：US18101317

申请日：2023-01-25

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC分类号： H10B41/27 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/0332 ,  H01L21/0337 ,  H10B41/27 ,  H01L21/31122 ,  H01L21/31144

摘要： Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US20240027912A1

公开(公告)日：2024-01-25

申请号：US17872370

申请日：2022-07-25

申请人： Applied Materials, Inc.

发明人： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC分类号： G03F7/40 ,  G03F7/34

CPC分类号： G03F7/40 ,  G03F7/346

摘要： Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

公开(公告)号：US20230360967A1

公开(公告)日：2023-11-09

申请号：US17739856

申请日：2022-05-09

申请人： Applied Materials, Inc.

发明人： Chandan Das ,  Susmit Singha Roy ,  Supriya Ghosh ,  John Sudijono ,  Abhijit Basu Mallick ,  Jiecong Tang

IPC分类号： H01L21/768 ,  H01L27/11556 ,  H01L27/11582

CPC分类号： H01L21/76843 ,  H01L21/76877 ,  H01L27/11556 ,  H01L27/11582

摘要： Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.