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1.
公开(公告)号:US20220254641A1
公开(公告)日:2022-08-11
申请号:US17174224
申请日:2021-02-11
Applicant: Applied Materials, Inc.
Inventor: Thai Cheng Chua , Christian Valencia , Chikuang Wang , Bencherki Mebarki , Hanh Nguyen , Philip Allan Kraus
IPC: H01L21/285 , H01L23/532 , H01J37/32 , C23C16/26 , C23C16/02 , C23C16/511
Abstract: Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma chamber, and flowing a carbon source and a hydrogen source into the modular microwave plasma chamber. In an embodiment, the method further comprises striking a plasma in the modular microwave plasma chamber, where a substrate temperature is below approximately 400° C., and depositing the graphene layer on the substrate.
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公开(公告)号:US20240379331A1
公开(公告)日:2024-11-14
申请号:US18144745
申请日:2023-05-08
Applicant: Applied Materials, Inc.
Inventor: Thai Cheng Chua , Kelvin Chan , Adam Fischbach , Farzad Houshmand , Christian Valencia , Philip Allan Kraus
Abstract: Embodiments disclosed herein include an applicator for microwave plasma generation. In an embodiment, the applicator comprises a resonator body with a hole into an axial center of the resonator body, where the resonator body comprises a first dielectric material. In an embodiment, the applicator further comprises a pin inserted into the hole, where the pin is an electrically conductive material. In an embodiment, the applicator further comprises a plate under the resonator body, where the plate comprises a second dielectric material that is different than the first dielectric material.
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3.
公开(公告)号:US12300497B2
公开(公告)日:2025-05-13
申请号:US17174224
申请日:2021-02-11
Applicant: Applied Materials, Inc.
Inventor: Thai Cheng Chua , Christian Valencia , Chikuang Wang , Bencherki Mebarki , Hanh Nguyen , Philip Allan Kraus
IPC: C23C16/00 , C23C16/02 , C23C16/26 , C23C16/511 , H01J37/32 , H01L21/285
Abstract: Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma chamber, and flowing a carbon source and a hydrogen source into the modular microwave plasma chamber. In an embodiment, the method further comprises striking a plasma in the modular microwave plasma chamber, where a substrate temperature is below approximately 400° C., and depositing the graphene layer on the substrate.
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公开(公告)号:US20250043413A1
公开(公告)日:2025-02-06
申请号:US18228555
申请日:2023-07-31
Applicant: Applied Materials, Inc.
Inventor: Sze Chieh Yvonne Tan , Vicknesh Sahmuganathan , John Sudijono , Philip Allan Kraus , Christian Valencia , Thai Cheng Chua
IPC: C23C16/27 , C23C16/02 , C23C16/511 , C23C16/52
Abstract: Embodiments include a modular high-frequency emission source for growth of a low roughness nanocrystalline diamond film. In an embodiment, a method of fabricating a nanocrystalline diamond (NCD) film includes loading a nanodiamond-seeded silicon wafer or a bare silicon wafer that has been surface-treated and incubated into a microwave plasma-enhanced chemical vapor deposition (MWPECVD) chamber, and processing the nanodiamond-seeded silicon wafer or the bare silicon wafer that has been surface-treated and incubated with a plasma of CxHy (y≥x), CO2 and H2, at power greater than 50 W, to form a layer of nanocrystalline diamond thereon.
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公开(公告)号:US20240153795A1
公开(公告)日:2024-05-09
申请号:US17981278
申请日:2022-11-04
Applicant: Applied Materials, Inc.
Inventor: Adam Fischbach , Richard McKissick , Brian Hatcher , Christian Valencia , Thai Cheng Chua , Philip Allan Kraus
CPC classification number: H01L21/6719 , H01J37/32192 , H01L21/681
Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, and a lid configured to seal the chamber. In an embodiment, a modular microwave plasma applicator is provided through the lid, and an optical port is provided through the lid and adjacent to the modular microwave plasma source. In an embodiment, a pin is inserted in the optical port.
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