公开(公告)号：US20210005723A1

公开(公告)日：2021-01-07

申请号：US17026510

申请日：2020-09-21

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US10818758B2

公开(公告)日：2020-10-27

申请号：US16194041

申请日：2018-11-16

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC: H01L21/02 ,  H01L29/40 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US10229833B2

公开(公告)日：2019-03-12

申请号：US15711989

申请日：2017-09-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  C23C16/455 ,  H01L29/49 ,  H01L21/8238 ,  C23C16/34 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US10087522B2

公开(公告)日：2018-10-02

申请号：US15135224

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455

Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.

公开(公告)号：US20180122642A1

公开(公告)日：2018-05-03

申请号：US15711989

申请日：2017-09-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  C23C16/455 ,  H01L21/8238 ,  H01L29/49

CPC classification number: H01L21/28088 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US20180108587A1

公开(公告)日：2018-04-19

申请号：US15673278

申请日：2017-08-09

Applicant: ASM IP Holding B.V.

Inventor： Xiaoqiang Jiang ,  Fu Tang ,  Qi Xie ,  Pauline Calka ,  Sung-Hoon Jung ,  Michael Eugene Givens

IPC: H01L23/31 ,  H01L21/02 ,  H01L23/29 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/305 ,  C23C16/45544 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67017 ,  H01L21/67155 ,  H01L21/6719 ,  H01L23/291 ,  H01L29/66477

Abstract: A system and a method for passivating a surface of a semiconductor. The method includes providing the surface of the semiconductor to a reaction chamber of a reactor, exposing the surface of the semiconductor to a gas-phase metal containing precursor in the reaction chamber and exposing the surface of the semiconductor to a gas-phase chalcogenide containing precursor. The methods also include passivating the surface of the semiconductor using the gas-phase metal containing precursor and the gas-phase chalcogenide containing precursor to form a passivated surface. The system for passivating a surface of a semiconductor may include a reactor, a metal containing precursor source fluidly coupled to the reactor, and a chalcogenide containing precursor source fluidly couple to the reactor, wherein the metal containing precursor source provides a gas-phase metal containing precursor to a reaction chamber of the reactor, and wherein the chalcogenide containing precursor source provides a gas-phase chalcogenide containing precursor to a reaction chamber of the reactor.

公开(公告)号：US20170306479A1

公开(公告)日：2017-10-26

申请号：US15135258

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455 ,  C23C16/42

CPC classification number: C23C16/38 ,  C23C16/42 ,  C23C16/45525

Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.

公开(公告)号：US09741815B2

公开(公告)日：2017-08-22

申请号：US14741246

申请日：2015-06-16

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Fu Tang ,  Michael Eugene Givens ,  Jan Willem Maes

IPC: H01L29/51 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/517 ,  H01L21/28255 ,  H01L21/28264 ,  H01L29/513 ,  H01L29/66568

Abstract: In some aspects, methods of forming a metal selenide or metal telluride thin film are provided. According to some methods, a metal selenide or metal telluride thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase selenium or tellurium reactant. In some aspects, methods of forming three-dimensional architectures on a substrate surface are provided. In some embodiments, the method includes forming a metal selenide or metal telluride interface layer between a substrate and a dielectric. In some embodiments, the method includes forming a metal selenide or metal telluride dielectric layer between a substrate and a conductive layer.

公开(公告)号：US20250081588A1

公开(公告)日：2025-03-06

申请号：US18950377

申请日：2024-11-18

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US12166099B2

公开(公告)日：2024-12-10

申请号：US18217739

申请日：2023-07-03

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.