公开(公告)号：US11791127B2

公开(公告)日：2023-10-17

申请号：US17397863

申请日：2021-08-09

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Joe Wang

IPC: H01J37/22 ,  G01N21/95 ,  G01N21/956 ,  H01J37/14 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  G01N21/88 ,  H01J37/153

CPC classification number: H01J37/222 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  H01J37/14 ,  H01J37/1471 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/20292 ,  H01J2237/24592 ,  H01J2237/2804

Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

公开(公告)号：US11769317B2

公开(公告)日：2023-09-26

申请号：US16718706

申请日：2019-12-18

Applicant: ASML Netherlands B.V.

Inventor： Wentian Zhou ,  Liangjiang Yu ,  Teng Wang ,  Lingling Pu ,  Wei Fang

IPC: G06T7/00 ,  G06V10/774 ,  G06F18/214 ,  G06V10/776 ,  G06V10/98

CPC classification number: G06V10/774 ,  G06F18/214 ,  G06T7/0006 ,  G06V10/776 ,  G06V10/993 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.

公开(公告)号：US11756187B2

公开(公告)日：2023-09-12

申请号：US17567847

申请日：2022-01-03

Applicant: ASML Netherlands B.V.

Inventor： Lingling Pu ,  Wei Fang ,  Nan Zhao ,  Wentian Zhou ,  Teng Wang ,  Ming Xu

IPC: G06T7/00 ,  G06T7/60 ,  H01L21/66

CPC classification number: G06T7/001 ,  G06T7/60 ,  G06T2207/10061 ,  G06T2207/30148 ,  G06T2207/30168 ,  H01L22/12

Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.

公开(公告)号：US11694312B2

公开(公告)日：2023-07-04

申请号：US17308835

申请日：2021-05-05

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Ruochong Fei ,  Lingling Pu ,  Wentian Zhou ,  Liangjiang Yu ,  Bo Wang

IPC: G06T5/00 ,  G06T7/10 ,  G06T5/50

CPC classification number: G06T5/003 ,  G06T5/50 ,  G06T7/10 ,  G06T2207/10061 ,  G06T2207/20201 ,  G06T2207/30148

Abstract: An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a first image and a second image of multiple stacked layers of a sample that are taken with a first focal point and a second focal point, respectively, associating a first segment of the first image with a first layer among the multiple stacked layers and associating a second segment of the second image with a second layer among the multiple stacked layers, updating the first segment based on a first reference image corresponding to the first layer and updating the second segment based on a second reference image corresponding to the second layer, and combining the updated first segment and the updated second segment to generate a combined image including the first layer and the second layer.

公开(公告)号：US11527405B2

公开(公告)日：2022-12-13

申请号：US16730897

申请日：2019-12-30

Applicant: ASML Netherlands B.V.

Inventor： Lingling Pu ,  Wei Fang ,  Zhong-wei Chen

IPC: H01L21/02 ,  G03F7/20 ,  G06F30/39 ,  H01J37/147 ,  H01J37/244

Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

公开(公告)号：US11450122B2

公开(公告)日：2022-09-20

申请号：US16959415

申请日：2018-12-19

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang

IPC: G06K9/00 ,  G06V20/69 ,  G01R31/307

Abstract: Systems and methods for detecting defects are disclosed. According to certain embodiments, a method of performing image processing includes acquiring one or more images of a sample, performing first image analysis on the one or more images, identifying a plurality of first features in the one or more images, determining pattern data corresponding to the plurality of first features, selecting at least one of the plurality of first features based on the pattern data, and performing second image analysis of the at least one of the plurality of first features. Methods may also include determining defect probability of the plurality of first features based on the pattern data. Selecting the at least one of the plurality of first features may be based on the defect probability.

公开(公告)号：US11430631B2

公开(公告)日：2022-08-30

申请号：US16833463

申请日：2020-03-27

Applicant: ASML Netherlands B.V.

Inventor： Kuo-Shih Liu ,  Xuedong Liu ,  Wei Fang ,  Jack Jau

IPC: H01J37/28 ,  H01J37/26

Abstract: Disclosed herein is a method comprising: generating a plurality of probe spots on a sample by a plurality of beams of charged particles; while scanning the plurality of probe spots across a region on the sample, recording from the plurality of probe spots a plurality of sets of signals respectively representing interactions of the plurality of beams of charged particles and the sample; generating a plurality of images of the region respectively from the plurality of sets of signals; and generating a composite image of the region from the plurality of images.

公开(公告)号：US11308602B2

公开(公告)日：2022-04-19

申请号：US16479203

申请日：2018-01-18

Applicant: ASML Netherlands B.V.

Inventor： Zhichao Chen ,  Wei Fang

IPC: G06T7/00 ,  G01N21/95

Abstract: A defect inspection system is disclosed. According to certain embodiments, the system includes a memory storing instructions implemented as a plurality of modules. Each of the plurality of modules is configured to detect defects having a different property. The system also includes a controller configured to cause the computer system to: receive inspection data representing an image of a wafer; input the inspection data to a first module of the plurality of modules, the first module outputs a first set of points of interests (POIs) having a first property; input the first set of POIs to a second module of the plurality of modules, the second module output a second set of POIs having the second property; and report that the second set of POIs as defects having both the first property and the second property.

公开(公告)号：US11238579B2

公开(公告)日：2022-02-01

申请号：US16479138

申请日：2018-01-18

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Haili Zhang ,  Zhichao Chen ,  Shengcheng Jin

IPC: G06T7/00 ,  G03F7/20 ,  G05B19/406

Abstract: A defect pattern grouping method is disclosed. The defect pattern grouping method comprises obtaining a first polygon that represents a first defect from an image of a sample, comparing the first polygon with a set of one or more representative polygons of a defect-pattern collection, and grouping the first polygon with any one or more representative polygons identified based on the comparison.

公开(公告)号：US11126089B2

公开(公告)日：2021-09-21

申请号：US16848724

申请日：2020-04-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wei Fang ,  Lingling Pu ,  Zhichao Chen ,  Haili Zhang ,  Pengcheng Zhang

IPC: G03F7/20 ,  G03F1/36

Abstract: A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.