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21.发明授权Method for planarizing a perpendicular magnetic recording disk for thermally-assisted recording (TAR) 有权平面化用于热辅助记录（TAR）的垂直磁记录盘的方法公开(公告)号：US08721903B2
公开(公告)日：2014-05-13
申请号：US13439929
申请日：2012-04-05
IPC分类号： B44C1/22
CPC分类号： G11B5/65 , G11B5/72 , G11B5/8408
摘要： A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.
摘要翻译： 真空平面化方法大大提高了具有由基本上化学排列的FePt合金或FePt-X合金（或CoPt合金或CoPt-X合金（或CoPt-X）合金）形成的记录层（RL）的热辅助记录（TAR）盘的表面粗糙度 ）和分离剂，如SiO 2。 第一非晶碳外涂层（OC1）沉积在RL上并用非化学反应性等离子体蚀刻，以除去OC1的至少一半的厚度。 然后在蚀刻的OC1上沉积第二个无定形碳外涂层（OC2）。 然后将OC2反应离子蚀刻，例如在H 2 / Ar等离子体中，以去除OC2的至少一半的厚度。 可以在蚀刻的OC2上沉积薄的第三外涂层（OC3）。
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22.发明申请METHOD FOR PLANARIZING A PERPENDICULAR MAGNETIC RECORDING DISK FOR THERMALLY-ASSISTED RECORDING (TAR) 有权用于平面化用于热辅助记录（TAR）的平滑磁记录盘的方法公开(公告)号：US20130264306A1
公开(公告)日：2013-10-10
申请号：US13439929
申请日：2012-04-05
IPC分类号： G11B5/84
CPC分类号： G11B5/65 , G11B5/72 , G11B5/8408
摘要： A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.
摘要翻译： 真空平面化方法大大提高了具有由基本上化学排列的FePt合金或FePt-X合金（或CoPt合金或CoPt-X合金（或CoPt-X）合金）形成的记录层（RL）的热辅助记录（TAR）盘的表面粗糙度 ）和分离剂，如SiO 2。 第一非晶碳外涂层（OC1）沉积在RL上并用非化学反应性等离子体蚀刻，以除去OC1的至少一半的厚度。 然后在蚀刻的OC1上沉积第二个无定形碳外涂层（OC2）。 然后将OC2反应离子蚀刻，例如在H 2 / Ar等离子体中，以去除OC2的至少一半的厚度。 可以在蚀刻的OC2上沉积薄的第三外涂层（OC3）。
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公开(公告)号：US20120325771A1
公开(公告)日：2012-12-27
申请号：US13604235
申请日：2012-09-05
申请人： Xiaoping Bian , Qing Dai , Dan S. Kercher , Mark F. Mercado , Qi-fan Xiao , Jane J. Zhang
发明人： Xiaoping Bian , Qing Dai , Dan S. Kercher , Mark F. Mercado , Qi-fan Xiao , Jane J. Zhang
IPC分类号： G11B5/84
CPC分类号： G11B5/8408
摘要： A method of fabricating media comprises forming recording media on a substrate. An overcoat is deposited on the recording media opposite the substrate. The overcoat has a first surface finish. The overcoat is etched to remove material and provide the overcoat with a second surface finish that is smoother than the first surface finish. The depositing and etching may occur sequentially in an in-situ, dry vacuum process. The second surface finish may not be mechanically processed after etching to further planarize the overcoat.
摘要翻译： 制造介质的方法包括在基底上形成记录介质。 在与衬底相对的记录介质上沉积外涂层。 外套具有第一表面光洁度。 蚀刻外涂层以除去材料，并为外涂层提供比第一表面光洁度更平滑的第二表面光洁度。 沉积和蚀刻可以在原位干燥的真空过程中顺序地进行。 蚀刻后第二表面光洁度可能不能机械加工，以进一步平整外涂层。
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24.发明申请SYSTEM, METHOD AND APPARATUS FOR ONSET MAGNETIC OXIDE LAYER FOR HIGH PERFORMANCE PERPENDICULAR MAGNETIC RECORDING MEDIA 有权用于高性能电磁记录介质的磁性氧化层的系统，方法和装置公开(公告)号：US20100067149A1
公开(公告)日：2010-03-18
申请号：US12210603
申请日：2008-09-15
申请人： Xiaoping Bian , Jyh-Kau Chang , Weikang Shen , Zhupei Shi , Kai Tang
发明人： Xiaoping Bian , Jyh-Kau Chang , Weikang Shen , Zhupei Shi , Kai Tang
CPC分类号： G11B5/667 , B82Y25/00 , B82Y40/00 , G11B5/66 , G11B5/82 , G11B5/8404 , H01F10/30 , H01F41/302
摘要： Perpendicular magnetic recording media has been enhanced by controlling the initial growth of magnetic oxide layers and increased magnetic isolation between the grains in the initial magnetic layer. An onset magnetic oxide layer is sputter deposited in an argon-oxygen gas mixture between the main CoPtCr-oxide magnetic layers and the underlying Ru layer. The insertion of the onset magnetic oxide layer enhances the coercivity of the oxide magnetic layers and also improves the nucleation field. The media signal-to-noise ratio and bit error rate also are significantly improved due to the improvement of the initial segregation of Co magnetic grains in the magnetic oxide layers.
摘要翻译： 通过控制磁性氧化物层的初始生长和增加初始磁性层中的晶粒之间的磁隔离，增强了垂直磁记录介质。 起始磁性氧化物层溅射沉积在主CoPtCr-氧化物磁性层和下面的Ru层之间的氩 - 氧气体混合物中。 开始的磁性氧化物层的插入增强了氧化物磁性层的矫顽力，并且还改善了成核场。 由于磁性氧化物层中Co磁性晶粒的初始偏析的改善，介质信噪比和误码率也显着提高。
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公开(公告)号：US06572989B2
公开(公告)日：2003-06-03
申请号：US09876571
申请日：2001-06-06
IPC分类号： G11B566
CPC分类号： G11B5/732 , G11B5/66 , G11B5/7325 , Y10S428/90 , Y10T428/12465 , Y10T428/12847 , Y10T428/12854 , Y10T428/12944 , Y10T428/24975 , Y10T428/265
摘要： In a thin film magnetic disk, a crystalline CrNi pre-seed layer is sputtered onto a substrate such as glass, followed by a RuAl seed layer. The CrNi pre-seed layer reduces grain size and its distribution, and improves in-plane crystallographic orientation, coercivity (Hc) and SNR. In a preferred embodiment the RuAl seed layer is followed by a Cr alloy underlayer. In a preferred embodiment the Cr alloy underlayer is followed by an onset layer and a magnetic layer, or by two or more magnetic layers antiferromagnetically coupled through one or more spacer layers. The crystalline CrNi pre-seed layer allows use of a thinner RuAl seed layer which results in smaller overall grain size, as well as a reduction in manufacturing cost due to relatively high cost of ruthenium. The CrNi pre-seed layer also allows use of a thinner Cr alloy underlayer which also contributes to reduce overall grain size.
摘要翻译： 在薄膜磁盘中，将结晶CrNi预种子层溅射到诸如玻璃的衬底上，随后是RuAl种子层。 CrNi预种子层减小晶粒尺寸及其分布，并提高晶面取向，矫顽力（Hc）和信噪比。 在优选的实施方案中，RuAl种子层之后是Cr合金底层。 在优选的实施方案中，Cr合金底层之后是起始层和磁性层，或者由两个或更多个通过一个或多个间隔层反铁磁耦合的磁性层。 结晶CrNi预种子层允许使用更薄的RuAl种子层，其导致更小的总体晶粒尺寸，以及由于钌的相对高的成本而导致的制造成本的降低。 CrNi预种子层还允许使用更薄的Cr合金底层，这也有助于减小总体晶粒尺寸。
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26.发明授权Seed layer and underlayer with high and low oxygen concentration portions for hand disk magnetic recording medium on a glass substrate 失效在玻璃基板上的手盘磁记录介质的种子层和具有高和低氧浓度部分的底层公开(公告)号：US06413608B1
公开(公告)日：2002-07-02
申请号：US09336641
申请日：1999-06-18
IPC分类号： G11B566
CPC分类号： G11B5/732 , C23C14/185 , G11B5/7325 , Y10S428/90 , Y10T428/24942 , Y10T428/265
摘要： The thin film magnetic disk of the present invention includes a non-metallic substrate having a seed layer deposited on the substrate, an underlayer deposited upon the seed layer composed of a chromium alloy having a relatively high oxygen concentration portion of from 2,000 ppm to 20,000 ppm and preferably approximately 4,000 ppm to 12,000 ppm, followed by a relatively low oxygen concentration portion of from 0-2,000 ppm, and preferably from 500 ppm to 1,500 ppm and a magnetic layer that is deposited upon the underlayer. The underlayer total thickness is in the range of from approximately 250 Å to approximately 700 Å with a preferred thickness of approximately 450 Å, wherein approximately half of the underlayer thickness is the high oxygen concentration portion and half is the low oxygen concentration portion.
摘要翻译： 本发明的薄膜磁盘包括具有沉积在基板上的种子层的非金属基板，沉积在由具有2000ppm至20,000ppm的较高氧浓度部分的铬合金构成的种子层的底层 优选为约4,000ppm〜12,000ppm，其次为相对较低的氧浓度部分为0〜2,000ppm，优选为500ppm〜1500ppm，以及沉积在底层上的磁性层。 底层总厚度在约250至约700的范围内，优选的厚度约为450，其中下层厚度的大约一半是高氧浓度部分，一半是低氧浓度部分。
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27.发明授权System, method and apparatus for onset magnetic oxide layer for high performance perpendicular magnetic recording media 有权用于高性能垂直磁记录介质的起始磁性氧化层的系统，方法和装置公开(公告)号：US09082442B2
公开(公告)日：2015-07-14
申请号：US12210603
申请日：2008-09-15
申请人： Xiaoping Bian , Jyh-Kau Chang , Weikang Shen , Zhupei Shi , Kai Tang
发明人： Xiaoping Bian , Jyh-Kau Chang , Weikang Shen , Zhupei Shi , Kai Tang
CPC分类号： G11B5/667 , B82Y25/00 , B82Y40/00 , G11B5/66 , G11B5/82 , G11B5/8404 , H01F10/30 , H01F41/302
摘要： Perpendicular magnetic recording media has been enhanced by controlling the initial growth of magnetic oxide layers and increased magnetic isolation between the grains in the initial magnetic layer. An onset magnetic oxide layer is sputter deposited in an argon-oxygen gas mixture between the main CoPtCr-oxide magnetic layers and the underlying Ru layer. The insertion of the onset magnetic oxide layer enhances the coercivity of the oxide magnetic layers and also improves the nucleation field. The media signal-to-noise ratio and bit error rate also are significantly improved due to the improvement of the initial segregation of Co magnetic grains in the magnetic oxide layers.
摘要翻译： 通过控制磁性氧化物层的初始生长和增加初始磁性层中的晶粒之间的磁隔离，增强了垂直磁记录介质。 起始磁性氧化物层溅射沉积在主CoPtCr-氧化物磁性层和下面的Ru层之间的氩 - 氧气体混合物中。 开始的磁性氧化物层的插入增强了氧化物磁性层的矫顽力，并且还改善了成核场。 由于磁性氧化物层中Co磁性晶粒的初始偏析的改善，介质信噪比和误码率也显着提高。
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公开(公告)号：US08580409B2
公开(公告)日：2013-11-12
申请号：US12614598
申请日：2009-11-09
申请人： Xiaoping Bian , Jack Jyh-Kau Chang , Zhupei Shi
发明人： Xiaoping Bian , Jack Jyh-Kau Chang , Zhupei Shi
CPC分类号： G11B5/66 , G11B5/65 , G11B5/7325 , G11B5/738 , Y10T428/115
摘要： Perpendicular magnetic recording (PMR) media and methods of fabricating PMR media are described. The PMR media includes, among other layers, an underlayer, a first onset layer on the underlayer, a second onset layer on the first onset layer, and a perpendicular magnetic recording layer on the second onset layer. The second onset layer has a magnetic moment which is higher than both a magnetic moment of the first onset layer and a magnetic moment of the perpendicular magnetic recording layer.
摘要翻译： 描述了垂直磁记录（PMR）介质和制造PMR介质的方法。 除了其它层之外，PMR介质包括底层，底层上的第一起始层，第一起始层上的第二起始层和第二起始层上的垂直磁记录层。 第二起始层具有高于第一起始层的磁矩和垂直磁记录层的磁矩的磁矩。
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公开(公告)号：US06852430B2
公开(公告)日：2005-02-08
申请号：US10059780
申请日：2002-01-29
申请人： Xiaoping Bian , Mary Frances Doerner , James A. Hagan , Tim Minvielle , Mohammad Taghi Mirzamaani , Adam Daniel Polcyn , Kai Tang
发明人： Xiaoping Bian , Mary Frances Doerner , James A. Hagan , Tim Minvielle , Mohammad Taghi Mirzamaani , Adam Daniel Polcyn , Kai Tang
CPC分类号： B82Y25/00 , G11B5/732 , H01F10/30 , H01F10/32 , Y10S428/90 , Y10T428/12472 , Y10T428/12681 , Y10T428/265
摘要： A thin film magnetic media structure with a pre-seed layer of CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by at least one underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.
摘要翻译： 公开了一种具有CrTi预种子层的薄膜磁介质结构。 CrTi预种子层呈现无定形或纳米晶体结构。 优选的种子层是用于CrTi预种子层的RuAl。 CrTi / RuAl双层结构的使用提供了优异的与基板的粘附性和耐划伤性，以及优于现有技术的矫顽力和信噪比（SNR）以及降低的成本。 本发明的一个实施方案溅射沉积CrTi预种子层和RuAl种子层，随后是周向抛光的衬底结构上的至少一个底层和至少一个磁性层，以实现大于1的Mrt取向比。 根据本发明的两种方法允许通过改变RuAl种子层的厚度和/或改变预种子层中钛的原子百分比来调节或最大化盘的Mrt取向比。
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公开(公告)号：US6077586A
公开(公告)日：2000-06-20
申请号：US892724
申请日：1997-07-15
CPC分类号： G11B5/66 , Y10S428/90 , Y10T428/265
摘要： A thin film disk with laminated magnetic layers, for use in a disk drive, is described which exhibits a single switching behavior resulting in a smooth hysteresis loop. This is achieved by depositing a seed layer prior to depositing the Cr or Cr alloy underlayer. The seed layer material is selected to promote a [112] PO in the underlayer and subsequently a [1010] PO in the two or more laminated magnetic layers. The [1010] PO aids in maintaining minimal Hc variations between the magnetic layers. The seed layer can be a B2 type structure material such as NiAl or FeAl or any other material which results in the [112] PO in the underlayer. The underlayer is preferably Cr or a Cr alloy; the magnetic layers are preferably CoPtCr, CoPtCrTa or CoPtCrB. The spacer layer between the magnetic layers may be made from the same material as the underlayer, but may also be different, e.g. an hexagonal crystalline material such as Ru. The disks of the invention can be manufactured in standard high volume sputtering systems by virtue of the fact the magnetic layers have a reduced dependency on substrate temperature.
摘要翻译： 描述了一种用于磁盘驱动器的具有层叠磁性层的薄膜盘，其具有导致平滑磁滞回线的单一切换行为。 这是通过在沉积Cr或Cr合金底层之前沉积种子层来实现的。 选择种子层材料以促进底层中的[112] PO和随后在两个或更多个层叠磁性层中的[10 + E，ov 1 + EE 0] PO。 [10 + E，ovs 1 + EE 0] PO有助于保持磁层之间的最小Hc变化。 种子层可以是B2型结构材料，例如NiAl或FeAl，或其它材料，其导致底层中的PO。 底层优选为Cr或Cr合金; 磁性层优选为CoPtCr，CoPtCrTa或CoPtCrB。 磁性层之间的间隔层可以由与底层相同的材料制成，但是也可以不同。 六方晶结晶材料如Ru。 由于磁性层对衬底温度的依赖性降低，本发明的磁盘可以用标准的高体积溅射系统制造。
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