Methods for depositing films comprising cobalt and cobalt nitrides
    23.
    发明授权
    Methods for depositing films comprising cobalt and cobalt nitrides 有权
    用于沉积包含钴和钴的氮化物的膜的方法

    公开(公告)号:US09005704B2

    公开(公告)日:2015-04-14

    申请号:US14198776

    申请日:2014-03-06

    Abstract: Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.

    Abstract translation: 含钴膜,以及提供含钴膜的方法。 某些方法涉及将底物表面暴露于前体和共反应物以提供含钴膜,第一前体具有由以下表示的结构:其中每个R独立地为C 1 -C 6取代或未取代的烷烃,支链或 支链烷烃,取代或未取代的烯烃,支链或非支链烯烃,取代或未取代的炔烃,支链或非支链炔烃或取代或未取代的芳烃,L是包含路易斯碱的配位配体。

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