公开(公告)号：US10763090B2

公开(公告)日：2020-09-01

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/56 ,  H01J37/32

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

公开(公告)号：USD851613S1

公开(公告)日：2019-06-18

申请号：US29621221

申请日：2017-10-05

Applicant: APPLIED MATERIALS, INC.

Designer： William Johanson ,  Kirankumar Savandaiah ,  Anthony Chih-Tang Chan ,  Siew Kit Hoi ,  Prashant Prabhakar Prabhu

公开(公告)号：US10312116B2

公开(公告)日：2019-06-04

申请号：US15722549

申请日：2017-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Jallepally Ravi ,  Steven V. Sansoni ,  Kirankumar Savandaiah

IPC: H01L21/67

Abstract: Methods and apparatus for changing the temperature of a substrate are provided. In some embodiments, a method includes: placing a substrate onto a support surface of a substrate support disposed within an inner volume of a cooling chamber; moving at least one of the substrate support or a plate disposed in the cooling chamber opposite the substrate support from a first position, in which the substrate is placed onto the support surface, to a second position, in which a second volume is created between the support surface and the plate, the second volume being smaller than and substantially sealed off from a remaining portion of the inner volume; flowing a gas into the second volume to increase a pressure within the second volume; and flowing a coolant through a plurality of channels disposed in at least one of the substrate support or the plate to cool the substrate.

公开(公告)号：US10115573B2

公开(公告)日：2018-10-30

申请号：US14864031

申请日：2015-09-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Junqi Wei ,  Kirankumar Savandaiah ,  Ananthkrishna Jupudi ,  Zhitao Cao ,  Yueh Sheng Ow

IPC: H01J37/34 ,  H01J37/32

Abstract: Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.

公开(公告)号：US10103012B2

公开(公告)日：2018-10-16

申请号：US15260190

申请日：2016-09-08

Applicant: APPLIED MATERIALS, INC.

Inventor： William Johanson ,  Kirankumar Savandaiah

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/56

Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield configured for use in a processing chamber for processing a substrate having a given diameter includes: a cylindrical body having an upper portion and a lower portion; an annular heat transfer channel disposed within the upper portion; and a cover ring section extending radially inward from the lower portion and having an annular leg extending from a bottom surface of the cover ring section, wherein the annular leg is configured to interface with a deposition ring to form a tortuous path between the bottom surface and the deposition ring.

公开(公告)号：US09960023B2

公开(公告)日：2018-05-01

申请号：US14587967

申请日：2014-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Junqi Wei ,  Zhitao Cao ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Kirankumar Savandaiah ,  Xin Wang ,  Sriskantharajah Thirunavukarasu

IPC: C23C14/34 ,  H01J37/34 ,  C22C1/04 ,  C22C27/04 ,  B22F3/12 ,  C22C14/00

CPC classification number: H01J37/3429 ,  B22F3/12 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/0458 ,  C22C14/00 ,  C22C27/04 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/10 ,  B22F2003/247 ,  B22F2202/13

Abstract: Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.

公开(公告)号：US20180025924A1

公开(公告)日：2018-01-25

申请号：US15722549

申请日：2017-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Jallepally Ravi ,  Steven V. Sansoni ,  Kirankumar Savandaiah

IPC: H01L21/67

CPC classification number: H01L21/67109

Abstract: Methods and apparatus for changing the temperature of a substrate are provided. In some embodiments, a method includes: placing a substrate onto a support surface of a substrate support disposed within an inner volume of a cooling chamber; moving at least one of the substrate support or a plate disposed in the cooling chamber opposite the substrate support from a first position, in which the substrate is placed onto the support surface, to a second position, in which a second volume is created between the support surface and the plate, the second volume being smaller than and substantially sealed off from a remaining portion of the inner volume; flowing a gas into the second volume to increase a pressure within the second volume; and flowing a coolant through a plurality of channels disposed in at least one of the substrate support or the plate to cool the substrate.

公开(公告)号：US20150294886A1

公开(公告)日：2015-10-15

申请号：US14251134

申请日：2014-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Jallepally Ravi ,  Steven V. Sansoni ,  Kirankumar Savandaiah

IPC: H01L21/67

CPC classification number: H01L21/67109

Abstract: Embodiments of methods and apparatus for rapidly cooling a substrate are provided herein. In some embodiments, a cooling chamber for cooling a substrate includes a chamber body having an inner volume; a substrate support disposed in the chamber and having a support surface to support a substrate; a plate disposed in the chamber body opposite the substrate support, wherein the substrate support and the plate are movable with respect to each other between a first position and a second position, wherein when in the first position the substrate support and the plate are disposed away from each other such that the support surface is exposed to a first volume within the inner volume, wherein when in the second position the substrate support and the plate are disposed adjacent to each other such that the support surface is exposed to a second volume within the inner volume, and wherein the second volume is smaller than the first volume; a plurality of flow channels disposed in one or more of the plate or the substrate support to flow a coolant; and a gas inlet to provide a gas into the second volume.

Abstract translation: 本文提供了用于快速冷却基板的方法和装置的实施例。 在一些实施例中，用于冷却基板的冷却室包括具有内部容积的室主体; 设置在所述腔室中并具有用于支撑衬底的支撑表面的衬底支撑件; 设置在所述室主体中与所述基板支撑件相对的板，其中所述基板支撑件和所述板可在第一位置和第二位置之间相对于彼此移动，其中当所述基板支撑件和所述板被放置在第一位置时 彼此之间使得支撑表面暴露于内部体积内的第一体积，其中当在第二位置时，衬底支撑件和板彼此相邻地设置，使得支撑表面暴露于内部容积内的第二体积 内部体积，并且其中所述第二体积小于所述第一容积; 设置在所述板或所述基板支撑件中的一个或多个中以流过冷却剂的多个流动通道; 以及将气体提供到第二容积中的气体入口。