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21.发明申请公开(公告)号：US20200057368A1
公开(公告)日：2020-02-20
申请号：US16656103
申请日：2019-10-17
Applicant: Arkema France
Inventor： Xavier Chevalier , Raber Inoubli , Christophe Navarro , Celia Nicolet
Abstract: Provided is a process for controlling the critical dimension uniformity of ordered films of block copolymers on a nanometric scale. The invention also relates to the compositions used for controlling the critical dimension uniformity of ordered films of block copolymers and to the resulting ordered films that can be used in particular as masks in the lithography field.
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公开(公告)号：US10023677B2
公开(公告)日：2018-07-17
申请号：US14971661
申请日：2015-12-16
Applicant: Arkema France
Inventor： Christophe Navarro , Celia Nicolet , Xavier Chevalier
IPC: C08F297/02 , C09D153/00 , G03F7/00 , G03F7/004 , B82Y30/00
Abstract: A method for controlling the synthesis of a block copolymer containing at least two blocks, with at least one nonpolar block and at least one polar block, said method making it possible in particular to control the ratio between the blocks and the molecular weight of each of the blocks, said copolymer being a block copolymer intended to be used as a mask in a method of nanolithography by direct self-assembly (DSA), said control being achieved by semicontinuous anionic polymerization in an aprotic nonpolar medium.
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公开(公告)号：US20180015645A1
公开(公告)日：2018-01-18
申请号：US15545134
申请日：2016-01-21
Applicant: Arkema France
Inventor： Xavier Chevalier , Raber Inoubli , Christophe Navarro , Celia Nicolet
CPC classification number: B29C41/003 , B29C41/46 , B29K2105/0085 , B29L2011/00 , C08J5/18 , C08J2353/00 , C08J2453/00 , G03F1/50 , G03F7/0002
Abstract: The present invention relates to a process for reducing the assembly time comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.
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