DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20220139968A1

    公开(公告)日:2022-05-05

    申请号:US17357347

    申请日:2021-06-24

    Abstract: Disclosed are a display substrate, a manufacturing method thereof, a display panel and a display device. The display panel comprises: a base substrate provided with a first area and a second area which are not overlapped with each other; a low temperature poly-silicon transistor arranged in the first area, the low temperature poly-silicon transistor comprises a poly-silicon active layer; an oxide transistor arranged in the second area, the oxide transistor comprises a first gate electrode; the first gate electrode is arranged in a same layer as the poly-silicon active layer, and a material of the first gate electrode is heavily-doped poly-silicon.

    QLED DISPLAY PANEL AND PREPARATION METHOD THEREOF AND DISPLAY APPARATUS

    公开(公告)号:US20210249620A1

    公开(公告)日:2021-08-12

    申请号:US17241147

    申请日:2021-04-27

    Inventor: Dong LI

    Abstract: Disclosed are a QLED display panel and a preparation method thereof and a display apparatus. The QLED display panel includes: a base substrate; a second electrode, an electron transport layer, a quantum dot luminescent layer, a hole transport layer, a hole injection layer, and a first electrode disposed sequentially on the base substrate; and the QLED display panel further including: a first ionic coordination compound layer between the quantum dot luminescent layer and the hole transport layer.

    QLED DISPLAY PANEL AND PREPARATION METHOD THEREOF AND DISPLAY APPARATUS

    公开(公告)号:US20200044174A1

    公开(公告)日:2020-02-06

    申请号:US16420705

    申请日:2019-05-23

    Inventor: Dong LI

    Abstract: Disclosed are a QLED display panel and a preparation method thereof and a display apparatus. The QLED display panel includes: a first and second substrates oppositely disposed; a first electrode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer and a second electrode formed between the first and second substrates and disposed sequentially along a direction from the first substrate to the second substrate; and a first ionic coordination compound layer formed on a side facing quantum dot luminescent layer, of hole transport layer. The first ionic coordination compound layer includes a first positive and a first negative ion portions; the first positive ion portion is on a side close to hole transport layer, of first ionic coordination compound layer, and the first negative ion portion is on a side close to quantum dot luminescent layer, of first ionic coordination compound layer.

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