公开(公告)号：US20240297255A1

公开(公告)日：2024-09-05

申请号：US17919301

申请日：2021-11-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969

Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

公开(公告)号：US20240250178A1

公开(公告)日：2024-07-25

申请号：US18017649

申请日：2022-02-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Kun ZHAO ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.

公开(公告)号：US20240215332A1

公开(公告)日：2024-06-27

申请号：US17908224

申请日：2021-11-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Fengjuan LIU ,  Wei LIU ,  Tianmin ZHOU ,  Kun ZHAO

IPC: H10K59/124 ,  H10K39/34 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K39/34 ,  H10K59/1201

Abstract: The present disclosure provides a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a circuit layer disposed on a base substrate, an emitting structure layer and a photoelectric structure layer disposed on a side of the circuit layer away from the base substrate, the circuit layer includes at least one impurity absorption layer and at least one transistor, the transistor includes an active layer, and at least one insulation layer is provided between the impurity absorption layer and the active layer; an atomic ratio of a silicon element to a nitrogen element in the impurity absorption layer is 1:5 to 1:35.