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    Organic thin film transistor
    21.
    发明授权
    Organic thin film transistor 有权
    有机薄膜晶体管

    公开(公告)号：US08373161B2

    公开(公告)日：2013-02-12

    申请号：US13346119

    申请日：2012-01-09

    申请人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

    发明人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0533

    摘要： Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

    摘要翻译： 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

    Composition for forming organic insulating film and method for forming pattern of organic insulating film using the same
    22.
    发明授权
    Composition for forming organic insulating film and method for forming pattern of organic insulating film using the same 失效
    用于形成有机绝缘膜的组合物和使用其形成有机绝缘膜的图案的方法

    公开(公告)号：US07645556B2

    公开(公告)日：2010-01-12

    申请号：US11156489

    申请日：2005-06-21

    申请人： Jung Han Shin ,  Tae Woo Lee ,  Bon Won Koo ,  Bang Lin Lee ,  Sang Yoon Lee

    发明人： Jung Han Shin ,  Tae Woo Lee ,  Bon Won Koo ,  Bang Lin Lee ,  Sang Yoon Lee

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： H01L21/31133 ,  H01L21/0274 ,  H01L51/052

    摘要： A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.

    摘要翻译： 一种用于形成有机绝缘膜的光可图案组合物，其包含（i）含官能团的单体，（ii）在光照射时产生酸或自由基的引发剂，和（iii）有机或无机聚合物。 还公开了使用该组合物形成有机绝缘膜的图案的方法。 由于有机绝缘膜可以简单地构图而不涉及任何光致抗蚀剂工艺，所以整个工艺被简化，并且最终可以通过所有湿法制造具有高电荷载流子迁移率的有机薄膜晶体管。

    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same
    26.
    发明授权
    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same 有权
    有机聚合物半导体，其制备方法和使用其的双极性有机薄膜晶体管

    公开(公告)号：US08354666B2

    公开(公告)日：2013-01-15

    申请号：US11790755

    申请日：2007-04-27

    申请人： Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

    发明人： Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0036 ,  C08G61/122 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  C09K11/06 ,  C09K2211/1458 ,  C09K2211/1466 ,  H01L51/0545 ,  H05B33/14

    摘要： Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.

    摘要翻译： 公开了有机聚合物半导体，使用该有机聚合物半导体的双极性有机薄膜晶体管，包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体，其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环，因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层（例如有机薄膜晶体管，使用这种有机聚合物半导体的双极性有机薄膜晶体管），包括双极性有机薄膜晶体管的电子器件和方法 的制造。

    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same
    27.
    发明申请
    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same 有权
    有机聚合物半导体，其制备方法和使用其的双极性有机薄膜晶体管

    公开(公告)号：US20080099758A1

    公开(公告)日：2008-05-01

    申请号：US11790755

    申请日：2007-04-27

    申请人： Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

    发明人： Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

    IPC分类号： H01L51/00 ,  H01L51/40

    CPC分类号： H01L51/0036 ,  C08G61/122 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  C09K11/06 ,  C09K2211/1458 ,  C09K2211/1466 ,  H01L51/0545 ,  H05B33/14

    摘要： Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.

    摘要翻译： 公开了有机聚合物半导体，使用该有机聚合物半导体的双极性有机薄膜晶体管，包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体，其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环，因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层（例如有机薄膜晶体管，使用这种有机聚合物半导体的双极性有机薄膜晶体管），包括双极性有机薄膜晶体管的电子器件和方法 的制造。

    Organic semiconductor materials using stacking-inducing compounds, compositions comprising such materials, organic semiconductor thin films formed using such compositions, and organic electronic devices incorporating such thin films
    28.
    发明授权
    Organic semiconductor materials using stacking-inducing compounds, compositions comprising such materials, organic semiconductor thin films formed using such compositions, and organic electronic devices incorporating such thin films 有权
    使用堆积诱导化合物的有机半导体材料，包含这些材料的组合物，使用这种组合物形成的有机半导体薄膜，以及掺入这种薄膜的有机电子器件

    公开(公告)号：US07719000B2

    公开(公告)日：2010-05-18

    申请号：US11700028

    申请日：2007-01-31

    申请人： Eun Jeong Jeong ,  Bang Lin Lee

    发明人： Eun Jeong Jeong ,  Bang Lin Lee

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0036 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1088 ,  C09K2211/1092 ,  H01L51/0068 ,  H01L51/0545 ,  H01L51/0558 ,  H05B33/14 ,  Y02E10/549 ,  Y02P70/521

    摘要： Disclosed are organic semiconductor materials, including mixtures of relatively low molecular weight aromatic ring compounds, in which at least one nitrogen atom or oxygen atom is present as a heteroatom in the aromatic ring compounds for forming hydrogen bonds between the heteroatom(s) and adjacent molecules and thereby increase intermolecular stacking. Organic semiconductor layers formed using such organic semiconductor materials will, accordingly, exhibit increased intermolecular stacking and associated improvements in one or more electrical properties of the semiconductor layer. Organic thin film transistors incorporating such organic semiconductor layers will tend to exhibit improved transistor properties including, for example, increased carrier mobility and reduced off-state leakage current. Further, the organic semiconductor layers may be manufactured using conventional room temperature processes, for example, spin coating or printing, thereby simplifying the fabrication process.

    摘要翻译： 公开了有机半导体材料，包括相对低分子量芳族环化合物的混合物，其中至少一个氮原子或氧原子作为杂原子存在于用于在杂原子和相邻分子之间形成氢键的芳族环化合物中 从而增加分子间堆叠。 因此，使用这种有机半导体材料形成的有机半导体层将表现出增加的分子间堆叠和相关的改善半导体层的一个或多个电性能。 结合这样的有机半导体层的有机薄膜晶体管倾向于表现出改善的晶体管特性，包括例如增加的载流子迁移率和减小的截止状态漏电流。 此外，可以使用常规室温工艺（例如旋涂或印刷）制造有机半导体层，从而简化制造过程。

    Organic semiconductor materials using stacking-inducing compounds, compositions comprising such materials, organic semiconductor thin films formed using such compositions, and organic electronic devices incorporating such thin films
    30.
    发明申请
    Organic semiconductor materials using stacking-inducing compounds, compositions comprising such materials, organic semiconductor thin films formed using such compositions, and organic electronic devices incorporating such thin films 有权
    使用堆积诱导化合物的有机半导体材料，包含这些材料的组合物，使用这种组合物形成的有机半导体薄膜，以及掺入这种薄膜的有机电子器件

    公开(公告)号：US20070287220A1

    公开(公告)日：2007-12-13

    申请号：US11700028

    申请日：2007-01-31

    申请人： Eun Jeong Jeong ,  Bang Lin Lee

    发明人： Eun Jeong Jeong ,  Bang Lin Lee

    IPC分类号： H01B1/12 ,  H01L27/01

    CPC分类号： H01L51/0036 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1088 ,  C09K2211/1092 ,  H01L51/0068 ,  H01L51/0545 ,  H01L51/0558 ,  H05B33/14 ,  Y02E10/549 ,  Y02P70/521

    摘要： Disclosed are organic semiconductor materials, including mixtures of relatively low molecular weight aromatic ring compounds, in which at least one nitrogen atom or oxygen atom is present as a heteroatom in the aromatic ring compounds for forming hydrogen bonds between the heteroatom(s) and adjacent molecules and thereby increase intermolecular stacking. Organic semiconductor layers formed using such organic semiconductor materials will, accordingly, exhibit increased intermolecular stacking and associated improvements in one or more electrical properties of the semiconductor layer. Organic thin film transistors incorporating such organic semiconductor layers will tend to exhibit improved transistor properties including, for example, increased carrier mobility and reduced off-state leakage current. Further, the organic semiconductor layers may be manufactured using conventional room temperature processes, for example, spin coating or printing, thereby simplifying the fabrication process.

    摘要翻译： 公开了有机半导体材料，包括相对低分子量芳族环化合物的混合物，其中至少一个氮原子或氧原子作为杂原子存在于用于在杂原子和相邻分子之间形成氢键的芳族环化合物中 从而增加分子间堆叠。 因此，使用这种有机半导体材料形成的有机半导体层将表现出增加的分子间堆叠和相关的改善半导体层的一个或多个电性能。 结合这样的有机半导体层的有机薄膜晶体管倾向于表现出改善的晶体管特性，包括例如增加的载流子迁移率和减小的截止状态漏电流。 此外，可以使用常规室温工艺（例如旋涂或印刷）制造有机半导体层，从而简化制造工艺。