Polishing system with in-line and in-situ metrology
    22.
    发明授权
    Polishing system with in-line and in-situ metrology 有权
    具有在线和原位计量的抛光系统

    公开(公告)号:US07101251B2

    公开(公告)日:2006-09-05

    申请号:US11166022

    申请日:2005-06-23

    IPC分类号: B24B49/00 B24B51/00 B24B1/00

    摘要: A computer program product for process control in chemical mechanical polishing is described. The product includes instructions to cause a processor to receive a measurement of an initial pre-polishing thickness of a layer of a substrate from a metrology station, determine a value for a parameter of an endpoint algorithm from the initial thickness of the substrate, receive a monitoring signal generated from monitoring in-situ polishing of the substrate, process the monitoring signal to detect a signal feature indicating a final or intermediate endpoint and send instructions to stop polishing when an endpoint criterion is detected using the endpoint algorithm with the determined value for the parameter.

    摘要翻译: 描述了用于化学机械抛光中的过程控制的计算机程序产品。 该产品包括使得处理器从测量站接收基底层的初始预抛光厚度的测量的指令,从衬底的初始厚度确定端点算法的参数的值,接收 通过监测衬底的原位抛光产生的监测信号,处理监控信号以检测指示最终或中间端点的信号特征,并且当使用具有确定的值的端点算法检测到端点标准时,发送指令停止抛光 参数。

    Chemical mechanical polishing control system and method
    23.
    发明授权
    Chemical mechanical polishing control system and method 有权
    化学机械抛光控制系统及方法

    公开(公告)号:US07074109B1

    公开(公告)日:2006-07-11

    申请号:US10920701

    申请日:2004-08-17

    IPC分类号: B24B49/00

    摘要: A system, method, and computer program product for chemical mechanical polishing a substrate in which initially a plurality of predetermined pressures are applied to a plurality of regions of the substrate. A plurality of portions of the substrate are monitored during polishing with an in-situ monitoring system. If the difference in thickness between two portions of the substrate exceeds a predetermined threshold, a plurality of adjusted pressures are calculated in a closed-loop control system, and the plurality of adjusted pressures are applied to the plurality of regions of the substrate. The predetermined threshold includes an initial threshold for the start of the polishing process and a second threshold for a period of polishing after the start of the polishing process.

    摘要翻译: 一种用于化学机械抛光衬底的系统,方法和计算机程序产品,其中最初将多个预定压力施加到衬底的多个区域。 在用原位监测系统进行抛光时监测基板的多个部分。 如果基板的两个部分之间的厚度差超过预定阈值,则在闭环控制系统中计算多个调节压力,并且将多个调节压力施加到基板的多个区域。 预定阈值包括用于开始抛光处理的初始阈值和在抛光过程开始之后的抛光周期的第二阈值。

    Signal improvement in eddy current sensing
    27.
    发明授权
    Signal improvement in eddy current sensing 有权
    涡流检测信号改进

    公开(公告)号:US07016795B2

    公开(公告)日:2006-03-21

    申请号:US10359107

    申请日:2003-02-04

    IPC分类号: G06F19/00 G01B7/06

    摘要: Improved endpoint detection and/or thickness measurements may be obtained by correcting sensor data using calibration parameters and/or drift compensation parameters. Calibration parameters may include an offset and a slope, or other parameters. Drift compensation parameters may include off-wafer measurements.

    摘要翻译: 可以通过使用校准参数和/或漂移补偿参数校正传感器数据来获得改进的端点检测和/或厚度测量。 校准参数可以包括偏移和斜率,或其他参数。 漂移补偿参数可能包括晶圆外测量。

    Eddy Current System for In-Situ Profile Measurement
    30.
    发明申请
    Eddy Current System for In-Situ Profile Measurement 审中-公开
    用于原位轮廓测量的涡流系统

    公开(公告)号:US20110294402A1

    公开(公告)日:2011-12-01

    申请号:US13207213

    申请日:2011-08-10

    IPC分类号: B24B49/00

    摘要: An eddy current monitoring system may include an elongated core. One or more coils may be coupled with the elongated core for producing an oscillating magnetic field that may couple with one or more conductive regions on a wafer. The core may be translated relative to the wafer to provide improved resolution while maintaining sufficient signal strength. An eddy current monitoring system may include a DC-coupled marginal oscillator for producing an oscillating magnetic field at a resonant frequency, where the resonant frequency may change as a result of changes to one or more conductive regions. Eddy current monitoring systems may be used to enable real-time profile control.

    摘要翻译: 涡流监视系统可以包括细长的核心。 一个或多个线圈可以与细长铁芯耦合以产生可与晶片上的一个或多个导电区域耦合的振荡磁场。 芯可以相对于晶片翻转以提供改善的分辨率,同时保持足够的信号强度。 涡流监测系统可以包括用于产生谐振频率的振荡磁场的DC耦合边缘振荡器,其中谐振频率可能由于对一个或多个导电区域的改变而改变。 涡流监视系统可用于实现实时配置文件控制。