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17 条记录 (耗时 0.013 秒)

    Polishing system with in-line and in-situ metrology
    1.
    发明授权
    Polishing system with in-line and in-situ metrology 有权
    具有在线和原位计量的抛光系统

    公开(公告)号：US07101251B2

    公开(公告)日：2006-09-05

    申请号：US11166022

    申请日：2005-06-23

    申请人： Boguslaw A. Swedek ,  Bret W. Adams ,  Sanjay Rajaram ,  David A. Chan ,  Manoocher Birang

    发明人： Boguslaw A. Swedek ,  Bret W. Adams ,  Sanjay Rajaram ,  David A. Chan ,  Manoocher Birang

    IPC分类号： B24B49/00 ,  B24B51/00 ,  B24B1/00

    CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  B24B51/00 ,  H01L22/26

    摘要： A computer program product for process control in chemical mechanical polishing is described. The product includes instructions to cause a processor to receive a measurement of an initial pre-polishing thickness of a layer of a substrate from a metrology station, determine a value for a parameter of an endpoint algorithm from the initial thickness of the substrate, receive a monitoring signal generated from monitoring in-situ polishing of the substrate, process the monitoring signal to detect a signal feature indicating a final or intermediate endpoint and send instructions to stop polishing when an endpoint criterion is detected using the endpoint algorithm with the determined value for the parameter.

    摘要翻译： 描述了用于化学机械抛光中的过程控制的计算机程序产品。 该产品包括使得处理器从测量站接收基底层的初始预抛光厚度的测量的指令，从衬底的初始厚度确定端点算法的参数的值，接收 通过监测衬底的原位抛光产生的监测信号，处理监控信号以检测指示最终或中间端点的信号特征，并且当使用具有确定的值的端点算法检测到端点标准时，发送指令停止抛光 参数。

    Method and apparatus for positioning a restrictor shield of a pump in response to an electric signal
    2.
    发明授权
    Method and apparatus for positioning a restrictor shield of a pump in response to an electric signal 失效
    响应于电信号定位泵的限流器屏蔽的方法和装置

    公开(公告)号：US6000415A

    公开(公告)日：1999-12-14

    申请号：US855827

    申请日：1997-05-12

    申请人： David Datong Huo ,  Bret W. Adams ,  John Jarvis

    发明人： David Datong Huo ,  Bret W. Adams ,  John Jarvis

    IPC分类号： F04B37/16 ,  F04B37/08 ,  F16K51/00 ,  H01L21/00

    CPC分类号： F16K51/00 ,  F04B37/08 ,  F04B2205/08 ,  Y10T137/0318

    摘要： Apparatus, positioned at an inlet port to a pump, for shielding the pump from a process chamber of a semiconductor wafer processing system, where the apparatus has a controllably variable effective throughput area, and method for electrically controlling the size of the effective throughput area. Specifically, the apparatus is a controllable restrictor shield supported by an actuator, having a first effective throughput area and a second effective throughput area, where the first effective throughput area is typically less than the second effective throughput area. The size of the effective throughput area is directly responsive to an electric signal that controls the actuator.

    摘要翻译： 装置，位于泵的入口处，用于将泵从半导体晶片处理系统的处理室屏蔽，其中该装置具有可控制的有效吞吐量面积，以及用于电控制有效吞吐量区域的尺寸的方法。 具体地，该装置是由致动器支撑的可控制的限制器屏蔽物，其具有第一有效吞吐量区域和第二有效吞吐量区域，其中第一有效吞吐量区域通常小于第二有效吞吐量区域。 有效吞吐量区域的大小直接响应于控制致动器的电信号。

    TECHNIQUE FOR MATCHING PERFORMANCE OF ION IMPLANTATION DEVICES USING AN IN-SITU MASK
    3.
    发明申请
    TECHNIQUE FOR MATCHING PERFORMANCE OF ION IMPLANTATION DEVICES USING AN IN-SITU MASK 失效
    使用现场面膜匹配离子植入装置的性能的技术

    公开(公告)号：US20080087844A1

    公开(公告)日：2008-04-17

    申请号：US11549790

    申请日：2006-10-16

    申请人： Peter D. Nunan ,  Bret W. Adams

    发明人： Peter D. Nunan ,  Bret W. Adams

    IPC分类号： A61N5/00

    CPC分类号： H01L22/20 ,  H01J2237/30433 ,  H01J2237/31711 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A technique for matching performance of ion implantation devices using an in-situ mask. In one particular exemplary embodiment, ion implantation is performed on a portion of a substrate while the remainder is masked off. The substrate is then moved to a second implanter tool. Implantation is then performed on another portion of the same substrate using the second tool while a mask covers the remainder of the substrate, including the first portion. After the second implantation process, parametric testing may be performed on semiconductor devices manufactured on the first and second portions to determine if there is variation in one or more performance characteristics of these semiconductor devices. If variations are found, changes may be suggested to one or more operating parameters of one of the implantation tools to reduce performance variation of implanters within the fabrication facility.

    摘要翻译： 使用原位掩模来匹配离子注入装置的性能的技术。 在一个特定的示例性实施例中，在衬底的一部分上执行离子注入，而其余部分被掩蔽。 然后将衬底移动到第二植入器工具。 然后使用第二工具在相同基底的另一部分上进行植入，而掩模覆盖包括第一部分的基底的其余部分。 在第二植入过程之后，可以对在第一和第二部分上制造的半导体器件执行参数测试，以确定这些半导体器件的一个或多个性能特性是否存在变化。 如果发现变化，则可以对植入工具之一的一个或多个操作参数进行改变，以减少制造设备内的植入物的性能变化。

    Particle trap in a magnetron sputtering chamber
    6.
    发明授权
    Particle trap in a magnetron sputtering chamber 失效
    磁控溅射室中的粒子陷阱

    公开(公告)号：US6013159A

    公开(公告)日：2000-01-11

    申请号：US971246

    申请日：1997-11-16

    申请人： Bret W. Adams ,  Ivo Raaijmakers

    发明人： Bret W. Adams ,  Ivo Raaijmakers

    IPC分类号： C23C14/56 ,  H01J37/34 ,  C23C14/00 ,  C23C14/34

    CPC分类号： H01J37/3455 ,  C23C14/564 ,  H01J37/3408

    摘要： A plasma sputtering reactor in which a magnet is linearly scanned over the back of the sputtering target to enhance the sputtering. The magnet's linear scan is extended to beyond the wafer processing area. When the magnet reaches that point, conditions are changed within the reactor to cause particles otherwise trapped by the magnet to fall into an area of the reactor where they do not fall on the substrate being processed. The changed conditions may include extinguishing the plasma, reducing or reversing the target voltage, positively charging walls of the trap area, or pulsing gas through the plasma. Also, according to the invention, the plasma is ignited with the magnet positioned over the trap area so that particles generated in the ignition process are not immediately deposited on the wafer or the walls of the processing area, and they tend to stay in the trap area.

    摘要翻译： 一种等离子溅射反应器，其中磁体在溅射靶的背面线性扫描以增强溅射。 磁体的线性扫描扩展到晶片处理区域之外。 当磁体达到该点时，反应器内的条件被改变，导致由磁体捕获的颗粒落入反应器的不被落在被处理的基板上的区域中。 改变的条件可能包括熄灭等离子体，减少或反转目标电压，积极地填充陷阱区域的壁或脉冲气体通过等离子体。 此外，根据本发明，等离子体被定位在捕获区域上方的磁体点燃，使得在点火过程中产生的颗粒不会立即沉积在晶片或处理区域的壁上，并且它们倾向于停留在阱中 区。