公开(公告)号：US20090052428A1

公开(公告)日：2009-02-26

申请号：US11568938

申请日：2005-05-10

Applicant: Ki Seon Ryu ,  Chang Jae Lee ,  Yong Suk Jin

Inventor： Ki Seon Ryu ,  Chang Jae Lee ,  Yong Suk Jin

IPC: H04J3/06

CPC classification number: H04L12/66

Abstract: A method of providing neighbor base station information via a mobile subscriber station in a broadband wireless access system is disclosed. In providing neighbor base station information (S316) to a serving base station from a mobile subscriber station in a broadband wireless access system, the present invention includes the steps of performing a scanning and a synchronization (S312, S313) on a mobile base station based on information provided from the serving base station (S311) and transmitting the neighbor base station information acquired from the scanning and the synchronization to the serving base station (S316) regardless of a presence or non-presence of a request from the serving base station. Accordingly, the present invention can efficiently transmit the neighbor base station signal intensity and frame information acquired by the mobile subscriber station.

Abstract translation: 公开了一种通过宽带无线接入系统中的移动用户站提供相邻基站信息的方法。 本发明在宽带无线接入系统中从移动用户台向服务基站提供相邻基站信息（S316），包括以下步骤：在移动基站上执行扫描和同步（S312，S313） 从服务基站提供的信息（S311），并且将从扫描和同步获取的相邻基站信息发送到服务基站（S316），而不管服务基站是否存在请求。 因此，本发明可以有效地发送由移动用户站获取的相邻基站信号强度和帧信息。

公开(公告)号：US06303493B1

公开(公告)日：2001-10-16

申请号：US08924534

申请日：1997-09-05

Applicant: Chang Jae Lee

Inventor： Chang Jae Lee

IPC: H01L2144

CPC classification number: H01L29/41783 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Wiring for a semiconductor device which is suitable for high density device packing, and a method for forming the same, are disclosed. The wiring includes: impurity regions formed in a substrate on both sides of an insulated gate electrode; a first conduction layer formed on the impurity regions; and a second conduction layer formed in contact with the first conduction layer on one side of the gate electrode. The method includes the steps of: forming impurity regions in a substrate on both sides of an insulated gate electrode; forming a first conduction layer on the impurity regions; and forming a second conduction layer in contact on one side of the gate electrode with the first conduction layer.

公开(公告)号：US5866458A

公开(公告)日：1999-02-02

申请号：US520440

申请日：1995-08-29

Applicant: Chang Jae Lee

Inventor： Chang Jae Lee

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/82

CPC classification number: H01L21/823878

Abstract: A CMOS fabrication method includes the steps of providing a substrate having a surface, forming a first conductive well adjacent to the surface of the substrate, forming a second conductive well adjacent to the surface of the substrate, a portion of the first conductive well overlapping a portion of the second conductive well, forming a field oxide in the overlapping portion of the first and second conductive wells forming a first gate over the first conductive well and a second gate over the second conductive well, masking the first conductive well and implanting second conductive impurities on the second conductive well and masking the second conductive well and implanting first conductive impurities on the first conductive well.

Abstract translation: CMOS制造方法包括以下步骤：提供具有表面的衬底，形成与衬底表面相邻的第一导电阱，形成与衬底表面相邻的第二导电阱，第一导电阱的一部分与 部分第二导电阱，在第一和第二导电阱的重叠部分中形成场氧化物，在第一导电阱上形成第一栅极，在第二导电阱上形成第二栅极，掩蔽第一导电阱并注入第二导电阱 在第二导电阱上的杂质并掩蔽第二导电阱并且在第一导电阱上注入第一导电杂质。

公开(公告)号：US5801086A

公开(公告)日：1998-09-01

申请号：US893739

申请日：1997-07-11

Applicant: Chang Jae Lee

Inventor： Chang Jae Lee

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/44 ,  H01L21/60 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/28518

Abstract: A method for forming a contact between a conductive layer and a portion of the substrate during manufacture of a semiconductor device is disclosed. The process includes the steps of: (a) covering a semiconductor substrate with an insulating layer, and forming a contact hole on the portion where a contact is to be formed; (b) forming a metal layer on the whole surface of the substrate, and implanting positive ions into the metal layer; and (c) heat-treating the whole substrate so as to form a silicide layer. The metals used are those which can react with silicon to form a silicide, and may be selected from high melting point metals including Co, Ti, Ta, Ni, Mo, and Hf. The ions used are ions including H+ or halogen element ions, and a heat treatment is carried out so that the implanted positive ions may spread on/in the grain boundaries, or that the positive ions may bond with dangling bonds. Further, a silicidation heat treatment is carried out so that the silicide would be formed on the portion where the metal and the silicon substrate contact together. These heat treatments may be carried out simultaneously. The heat treatment for the spreading of the positive ions is carried out at a low temperature of about 300.degree.-500.degree. C., while the heat treatment of the silicidation reaction is carried out at a proper temperature depending on the metal used.

Abstract translation: 公开了一种用于在制造半导体器件期间在导电层和衬底的一部分之间形成接触的方法。 该方法包括以下步骤：（a）用绝缘层覆盖半导体衬底，并在要形成接触的部分上形成接触孔; （b）在基板的整个表面上形成金属层，并将正离子注入到金属层中; 和（c）对整个基板进行热处理以形成硅化物层。 使用的金属是可以与硅反应形成硅化物的金属，并且可以选自包括Co，Ti，Ta，Ni，Mo和Hf的高熔点金属。 使用的离子包括H +或卤素元素离子，并且进行热处理，使得注入的正离子可以在晶界上/在晶界上扩散，或者正离子可以与悬挂键结合。 此外，进行硅化热处理，使得硅化物将形成在金属和硅衬底接触在一起的部分上。 这些热处理可以同时进行。 用于扩散正离子的热处理在约300-500℃的低温下进行，而硅化反应的热处理根据所使用的金属在适当的温度下进行。

公开(公告)号：US5741722A

公开(公告)日：1998-04-21

申请号：US698520

申请日：1996-08-15

Applicant: Chang Jae Lee

Inventor： Chang Jae Lee

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

CPC classification number: H01L27/10852 ,  H01L28/40

Abstract: A semiconductor device capacitor structure comprises a semiconductor substrate having an impurity diffusion region; an insulating layer formed on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode of a half ring type formed on the insulating film along an upper edge of the contact hole; a second lower electrode formed on a surface of the substrate exposed through the contact hole, a wall of the contact hole, and the first lower electrode; a dielectric layer formed on the first and second lower electrodes; and an upper electrode formed on the dielectric layer. This structure increases capacitance, thereby improving the characteristics and reliability of the device.

Abstract translation: 半导体器件电容器结构包括具有杂质扩散区域的半导体衬底; 绝缘层，其形成在所述半导体衬底上并且在所述杂质扩散区上具有接触孔; 沿所述接触孔的上边缘形成在所述绝缘膜上的半环型的第一下电极; 形成在通过接触孔露出的基板的表面上的第二下电极，接触孔的壁和第一下电极; 形成在第一和第二下部电极上的电介质层; 以及形成在电介质层上的上电极。 该结构增加了电容，从而提高了器件的特性和可靠性。

公开(公告)号：US08463976B2

公开(公告)日：2013-06-11

申请号：US12788108

申请日：2010-05-26

Applicant: Young Kim ,  Chang Hwan Lee ,  Young Hwan Lee ,  Chang Jae Lee

Inventor： Young Kim ,  Chang Hwan Lee ,  Young Hwan Lee ,  Chang Jae Lee

IPC: G06F13/00 ,  H04B1/38 ,  H04L5/16

CPC classification number: G06F13/4022 ,  G06F2213/0042 ,  Y02D10/14 ,  Y02D10/151

Abstract: A dual modem device includes a first processor to communicate with a first network and a second processor to communicate with a second network. The first processor includes a USB module to transceive a signal with a computer side using a universal serial bus (USB) interface, a first packet control block to determine a type of the signal transceived via the USB module and to decide a communication path, and a first function block to process a signal associated with the first network. The second processor includes a first control block to process a control signal for the first processor, a second control block to process a control signal for the second processor, and a second function block to process a signal associated with the second network.

Abstract translation: 双调制解调器装置包括与第一网络通信的第一处理器和与第二网络通信的第二处理器。 第一处理器包括USB模块，用于使用通用串行总线（USB）接口与计算机侧收发信号;第一分组控制块，用于确定通过USB模块收发的信号的类型并确定通信路径;以及 用于处理与第一网络相关联的信号的第一功能块。 第二处理器包括用于处理第一处理器的控制信号的第一控制块，用于处理第二处理器的控制信号的第二控制块以及处理与第二网络相关联的信号的第二功能块。

公开(公告)号：US08310971B2

公开(公告)日：2012-11-13

申请号：US13333784

申请日：2011-12-21

Applicant: Beom Joon Kim ,  Ki Seon Ryu ,  Chang Jae Lee ,  Yong Ho Kim

Inventor： Beom Joon Kim ,  Ki Seon Ryu ,  Chang Jae Lee ,  Yong Ho Kim

IPC: G08C17/00

CPC classification number: H04W52/0229 ,  H04W48/08 ,  Y02D70/146

Abstract: A method of indicating downlink traffic to a mobile subscriber station that is in a sleep mode includes transmitting a sleep request message to a base station (BS); entering the sleep mode in response to a sleep response message received from the BS, wherein the sleep response message includes a first SLPID; receiving a traffic indication message including a FMT field indicating formats for the traffic indication message from the BS during a listening interval of the sleep mode, wherein the FMT field indicates one of an SLPID bitmap based format and an SLPID based format, and the traffic indication message further includes a second SLPID when the SLPID based format is used; and terminating the sleep mode to receive the downlink traffic when the second SLPID in the traffic indication message is same as the first SLPID included in the sleep response message.

Abstract translation: 一种向处于睡眠模式的移动用户台指示下行链路业务的方法包括向基站（BS）发送睡眠请求消息; 响应于从BS接收到的睡眠响应消息进入睡眠模式，其中所述睡眠响应消息包括第一SLPID; 在休眠模式的监听间隔期间接收包括指示来自BS的业务指示消息的格式的FMT字段的业务指示消息，其中FMT字段指示基于SLPID位图的格式和基于SLPID的格式之一，并且业务指示 消息还包括当使用基于SLPID的格式时的第二SLPID; 以及当所述业务指示消息中的第二SLPID与包括在所述睡眠响应消息中的所述第一SLPID相同时，终止所述睡眠模式以接收所述下行链路业务。

公开(公告)号：US20110116430A1

公开(公告)日：2011-05-19

申请号：US13013742

申请日：2011-01-25

Applicant: Beom Joon KIM ,  Ki Seom Ryu ,  Chang Jae Lee ,  Yong Ho Kim

Inventor： Beom Joon KIM ,  Ki Seom Ryu ,  Chang Jae Lee ,  Yong Ho Kim

IPC: H04W52/02

CPC classification number: H04W52/0229 ,  H04W48/08 ,  Y02D70/146

Abstract: A method of supporting operation of sleep mode in a wideband radio access system is disclosed. More specifically, a mobile subscriber station (MSS) which determines a frame offset information for synchronizing listening windows of at least one MSS that is in sleep mode, and transmits the determined framed offset information to at least one MSS.

Abstract translation: 公开了一种在宽带无线电接入系统中支持睡眠模式操作的方法。 更具体地，移动用户台（MSS）确定用于同步处于休眠模式的至少一个MSS的监听窗口的帧偏移信息，并将确定的成帧偏移信息发送到至少一个MSS。

公开(公告)号：US07853286B2

公开(公告)日：2010-12-14

申请号：US11756551

申请日：2007-05-31

Applicant: Ki Seon Ryu ,  Chang Jae Lee ,  Yong Suk Jin

Inventor： Ki Seon Ryu ,  Chang Jae Lee ,  Yong Suk Jin

IPC: H04B7/00

CPC classification number: H04W36/12 ,  H04W48/08 ,  H04W92/18

Abstract: A method uses inter-base station control messages to provide neighbor base station information to mobile subscriber stations in a mobile communication system. The method includes obtaining, at a serving base station, physical channel information of neighbor base stations over a backbone network via, either directly or via a server; periodically transmitting the obtained physical channel information from the serving base station to a mobile subscriber station connected to the serving base station; and measuring, based on the updated physical channel information, signal quality of the at least one neighbor base station at the mobile subscriber station. Thus, the serving base station receives from the neighbor base stations the inter-base station control messages containing the neighbor base station information, updates the information, and provides the updated information to the corresponding mobile subscriber station(s), to be used for a specific purpose such as handover or network entry.

Abstract translation: 一种方法使用基站间控制消息来向移动通信系统中的移动用户台提供相邻基站信息。 该方法包括：通过直接或经由服务器，在服务基站处经由骨干网络获得邻近基站的物理信道信息; 将获得的物理信道信息周期性地从服务基站发送到与服务基站连接的移动用户站; 以及基于更新的物理信道信息来测量移动用户台处的至少一个相邻基站的信号质量。 因此，服务基站从邻近基站接收到包含相邻基站信息的基站间控制消息，更新信息，并将更新的信息提供给相应的移动用户站，以用于 具体目的，如切换或网络输入。

公开(公告)号：US06495920B2

公开(公告)日：2002-12-17

申请号：US09883988

申请日：2001-06-20

Applicant: Chang Jae Lee

Inventor： Chang Jae Lee

IPC: H01L2348

CPC classification number: H01L29/41783 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Wiring for a semiconductor device which is suitable for high density device packing, and a method for forming the same, are disclosed. The wiring includes: impurity regions formed in a substrate on both sides of an insulated gate electrode; a first conduction layer formed on the impurity regions; and a second conduction layer formed in contact with the first conduction layer on one side of the gate electrode. The method includes the steps of: forming impurity regions in a substrate on both sides of an insulated gate electrode; forming a first conduction layer on the impurity regions; and forming a second conduction layer in contact on one side of the gate electrode with the first conduction layer.

Abstract translation: 公开了适用于高密度器件封装的半导体器件的接线及其形成方法。 布线包括：形成在绝缘栅电极两侧的基板中的杂质区域; 在杂质区上形成的第一导电层; 以及与栅电极的一侧上的第一导电层接触形成的第二导电层。 该方法包括以下步骤：在绝缘栅电极两侧的衬底中形成杂质区; 在杂质区上形成第一导电层; 以及在栅电极的一侧与第一导电层形成接触的第二导电层。