公开(公告)号：US20130165813A1

公开(公告)日：2013-06-27

申请号：US13448297

申请日：2012-04-16

Applicant: Cheng-Hung Chang ,  Kuan-Jen Fang ,  Chun-Hsiang Huang ,  Chueh-Shan Liu ,  Yii-Tay Chiou ,  Yung-Ching Huang

Inventor： Cheng-Hung Chang ,  Kuan-Jen Fang ,  Chun-Hsiang Huang ,  Chueh-Shan Liu ,  Yii-Tay Chiou ,  Yung-Ching Huang

IPC: A61B5/0488 ,  A61B5/11

CPC classification number: A61B5/0492 ,  A61B5/1107 ,  A61B5/4519 ,  A61B2562/0219

Abstract: A sensor for acquiring EMG and MMG signals is provided, including a substrate, an inertial sensing element received in a hole of the substrate, a circuit element disposed on the substrate, a plurality of electrical connecting members connecting the inertial sensing element with the substrate, and a sensing ring disposed on the substrate and surrounding the hole. The electrical connecting members are flexible, and the circuit element and the sensing ring are disposed on opposite sides of the substrate.

Abstract translation: 提供一种用于获取EMG和MMG信号的传感器，包括基板，接收在基板的孔中的惯性感测元件，设置在基板上的电路元件，连接惯性感测元件与基板的多个电连接构件， 以及设置在基板上并围绕孔的感测环。 电连接构件是柔性的，并且电路元件和感测环设置在基板的相对侧上。

公开(公告)号：US08306597B2

公开(公告)日：2012-11-06

申请号：US12721513

申请日：2010-03-10

Applicant: Wen-Ying Chang ,  Cheng-Hung Chang

Inventor： Wen-Ying Chang ,  Cheng-Hung Chang

IPC: A61B5/1455 ,  A61B6/00

CPC classification number: A61B5/02427 ,  A61B5/02438 ,  A61B5/14532 ,  A61B5/14552 ,  A61B2562/0233 ,  A61B2562/043 ,  A61B2562/046 ,  A61B2562/146 ,  A61B2562/164 ,  A61B2562/223 ,  G01N21/474 ,  G01N21/49 ,  G01N2021/3144

Abstract: A physiological signal sensing device for examination of human is provided. The physiological signal sensing device includes a light emitting fiber and a light receiving fiber. The light emitting fiber includes a plurality of light emitting portions, wherein the light emitting fiber provides a plurality of sensing beams, and the sensing beams are respectively emitted through the light emitting portions. The light receiving fiber includes a plurality of light receiving portions. The light receiving fiber corresponds to the light emitting fiber. The sensing beams are emitted through the light emitting portions, reflected or refracted by the human. And then the sensing beams are received by the light receiving portions.

Abstract translation: 提供了一种用于人体检查的生理信号感测装置。 生理信号感测装置包括发光光纤和光接收光纤。 发光光纤包括多个发光部分，其中发光光纤提供多个感测光束，并且感测光束分别通过发光部分发射。 光接收光纤包括多个光接收部分。 光接收光纤对应于发光光纤。 感测光束通过发光部分发射，被人体反射或折射。 然后感光束被光接收部分接收。

公开(公告)号：US20110118574A1

公开(公告)日：2011-05-19

申请号：US12721513

申请日：2010-03-10

Applicant: Wen-Ying Chang ,  Cheng-Hung Chang

Inventor： Wen-Ying Chang ,  Cheng-Hung Chang

IPC: A61B5/1455 ,  A61B6/00

CPC classification number: A61B5/02427 ,  A61B5/02438 ,  A61B5/14532 ,  A61B5/14552 ,  A61B2562/0233 ,  A61B2562/043 ,  A61B2562/046 ,  A61B2562/146 ,  A61B2562/164 ,  A61B2562/223 ,  G01N21/474 ,  G01N21/49 ,  G01N2021/3144

Abstract: A physiological signal sensing device for examination of human is provided. The physiological signal sensing device includes a light emitting fiber and a light receiving fiber. The light emitting fiber includes a plurality of light emitting portions, wherein the light emitting fiber provides a plurality of sensing beams, and the sensing beams are respectively emitted through the light emitting portions. The light receiving fiber includes a plurality of light receiving portions. The light receiving fiber corresponds to the light emitting fiber. The sensing beams are emitted through the light emitting portions, reflected or refracted by the human. And then the sensing beams are received by the light receiving portions.

Abstract translation: 提供了一种用于人体检查的生理信号感测装置。 生理信号感测装置包括发光光纤和光接收光纤。 发光光纤包括多个发光部分，其中发光光纤提供多个感测光束，并且感测光束分别通过发光部分发射。 光接收光纤包括多个光接收部分。 光接收光纤对应于发光光纤。 感测光束通过发光部分发射，被人体反射或折射。 然后感光束被光接收部分接收。

公开(公告)号：US20090095980A1

公开(公告)日：2009-04-16

申请号：US11873156

申请日：2007-10-16

Applicant: Chen-Hua Yu ,  Yu-Rung Hsu ,  Chen-Nan Yeh ,  Cheng-Hung Chang

Inventor： Chen-Hua Yu ,  Yu-Rung Hsu ,  Chen-Nan Yeh ,  Cheng-Hung Chang

IPC: H01L29/778 ,  H01L29/786

CPC classification number: H01L29/1033 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor structure includes a semiconductor fin on a top surface of a substrate, wherein the semiconductor fin includes a middle section having a first width; and a first and a second end section connected to opposite ends of the middle section, wherein the first and the second end sections each comprises at least a top portion having a second width greater than the first width. The semiconductor structure further includes a gate dielectric layer on a top surface and sidewalls of the middle section of the semiconductor fin; and a gate electrode on the gate dielectric layer.

Abstract translation: 半导体结构包括在基板的顶面上的半导体翅片，其中半导体鳍片包括具有第一宽度的中间部分; 以及连接到中间部分的相对端部的第一和第二端部分，其中第一和第二端部部分至少包括具有大于第一宽度的第二宽度的顶部部分。 半导体结构还包括在半导体鳍片的顶表面和中间部分的侧壁上的栅介质层; 以及栅极电介质层上的栅电极。

公开(公告)号：US20090035909A1

公开(公告)日：2009-02-05

申请号：US11831098

申请日：2007-07-31

Applicant: Cheng-Hung Chang ,  Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Yu-Rung Hsu ,  Ding-Yuan Chen

Inventor： Cheng-Hung Chang ,  Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Yu-Rung Hsu ,  Ding-Yuan Chen

IPC: H01L21/8238

CPC classification number: H01L21/823828 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823857 ,  H01L29/66795 ,  H01L29/785

Abstract: The present disclosure provides a method of fabricating a FinFET element including providing a substrate including a first fin and a second fin. A first layer is formed on the first fin. The first layer comprises a dopant of a first type. A dopant of a second type is provided to the second fin. High temperature processing of the substrate is performed on the substrate including the formed first layer and the dopant of the second type.

Abstract translation: 本公开提供了一种制造FinFET元件的方法，包括提供包括第一鳍片和第二鳍片的衬底。 在第一散热片上形成第一层。 第一层包括第一类型的掺杂剂。 第二类型的掺杂剂被提供到第二鳍。 在包括所形成的第一层和第二类型的掺杂剂的衬底上进行衬底的高温处理。

公开(公告)号：US20070149282A1

公开(公告)日：2007-06-28

申请号：US11519229

申请日：2006-09-12

Applicant: Ying-Ko Lu ,  Ming-Jye Tsai ,  Shun-Nan Liou ,  Cheng-Hung Chang

Inventor： Ying-Ko Lu ,  Ming-Jye Tsai ,  Shun-Nan Liou ,  Cheng-Hung Chang

IPC: A63F9/24

CPC classification number: A63F13/212 ,  A63F13/06 ,  A63F13/211 ,  A63F13/235 ,  A63F13/428 ,  A63F2009/2402 ,  A63F2009/2408 ,  A63F2009/243 ,  A63F2009/2436 ,  A63F2300/1012 ,  A63F2300/105 ,  A63F2300/204

Abstract: The present invention relates to an interactive gaming method and apparatus with emotion perception ability, by which not only gestures of a user can be detected and used as inputs for controlling a game, but also physiological attributes of the user such as heart beats, galvanic skin response (GSR), etc., can be sensed and used as emotional feedbacks of the game affecting the user. According to the disclosed method, the present invention further provides an interactive gaming apparatus that will interpret the signals detected by the inertial sensing module and the bio sensing module and use the interpretation as a basis for evaluating the movements and emotions of a user immediately, and then the evaluation obtained by the interactive gaming apparatus is sent to the gaming platform to be used as feedbacks for controlling the game to interact with the user accordingly. Therefore, by the method and apparatus according to the present invention, not only the harmonics of human motion can be trained to improve, but also the self-control of a user can be enhanced.

Abstract translation: 本发明涉及具有情绪感知能力的交互式游戏方法和装置，通过该游戏方法和装置不仅可以检测用户的手势并将其用作控制游戏的输入，还包括用户的生理属性，例如心跳，电流皮肤 响应（GSR）等可被感知并用作影响用户的游戏的情感反馈。 根据所公开的方法，本发明还提供了一种交互式游戏装置，其将解释由惯性感测模块和生物传感模块检测到的信号，并将该解释用作立即评估用户的运动和情绪的基础，以及 那么由交互式游戏装置获得的评估被发送到游戏平台，以被用作控制游戏的反馈，以相应地与用户交互。 因此，通过根据本发明的方法和装置，不仅可以训练人体运动的谐波以改善，而且可以提高用户的自我控制。

公开(公告)号：US20060226786A1

公开(公告)日：2006-10-12

申请号：US11260011

申请日：2005-10-26

Applicant: Chaung Lin ,  Ken-Chyang Leou ,  Cheng-Hung Chang ,  Kai-Mu Hsiao

Inventor： Chaung Lin ,  Ken-Chyang Leou ,  Cheng-Hung Chang ,  Kai-Mu Hsiao

IPC: H01J7/24

CPC classification number: H01J37/3299 ,  H01J37/321

Abstract: An inductively-coupled plasma etch apparatus and a feedback control method thereof are provided. A voltage/current measuring device is connected to an electrostatic chuck of the plasma etching apparatus, so as to measure the RF current, voltage and the phase angle between them on the electrostatic chuck. The ion current and the RF bias voltage are obtained by calculation of the RF current, voltage and the phase angle. Finally, using the obtained ion current and the RF bias voltage to feedback control the RF power generator in order to achieve the desired plasma status.

Abstract translation: 提供了电感耦合等离子体蚀刻装置及其反馈控制方法。 电压/电流测量装置连接到等离子体蚀刻装置的静电卡盘，以便测量静电卡盘上的RF电流，电压和它们之间的相位角。 通过计算RF电流，电压和相位角获得离子电流和RF偏置电压。 最后，使用获得的离子电流和RF偏置电压来反馈控制RF发生器，以实现期望的等离子体状态。

公开(公告)号：US07119404B2

公开(公告)日：2006-10-10

申请号：US10849689

申请日：2004-05-19

Applicant: Cheng-Hung Chang ,  Weng Chang ,  Chu-Yun Fu

Inventor： Cheng-Hung Chang ,  Weng Chang ,  Chu-Yun Fu

IPC: H01L31/62 ,  H01L21/8238

CPC classification number: H01L29/7845 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7846

Abstract: Strained channel transistors including a PMOS and NMOS device pair to improve an NMOS device performance without substantially degrading PMOS device performance and method for forming the same, the method including providing a semiconductor substrate; forming strained shallow trench isolation regions in the semiconductor substrate; forming PMOS and NMOS devices on the semiconductor substrate including doped source and drain regions; forming a tensile strained contact etching stop layer (CESL) over the PMOS and NMOS devices; and, forming a tensile strained dielectric insulating layer over the CESL layer.

Abstract translation: 包括PMOS和NMOS器件对的应变沟道晶体管，以改善NMOS器件性能而不会使PMOS器件性能基本上降低，并且用于形成PMOS器件性能的方法，所述方法包括提供半导体衬底; 在半导体衬底中形成应变浅沟槽隔离区; 在包括掺杂源极和漏极区域的半导体衬底上形成PMOS和NMOS器件; 在PMOS和NMOS器件上形成拉伸应变接触蚀刻停止层（CESL）; 并在CESL层上形成拉伸应变电介质绝缘层。

公开(公告)号：US20060154481A1

公开(公告)日：2006-07-13

申请号：US10905517

申请日：2005-01-07

Applicant: Zhen-Cheng Wu ,  Cheng-Hung Chang ,  Yu-Lien Huang ,  Shwang-Ming Cheng

Inventor： Zhen-Cheng Wu ,  Cheng-Hung Chang ,  Yu-Lien Huang ,  Shwang-Ming Cheng

IPC: H01L21/44

CPC classification number: H01L21/76888 ,  H01L21/3003 ,  H01L29/665

Abstract: Disclosed herein are various embodiments of semiconductor devices and related methods of manufacturing a semiconductor device. In one embodiment, a method includes providing a semiconductor substrate and forming a metal silicide on the semiconductor substrate. In addition, the method includes treating an exposed surface of the metal silicide with a hydrogen/nitrogen-containing compound to form a treated layer on the exposed surface, where the composition of the treated layer hinders oxidation of the exposed surface. The method may then further include depositing a dielectric layer over the treated layer and the exposed surface of the metal silicide.

Abstract translation: 这里公开了半导体器件的各种实施例和制造半导体器件的相关方法。 在一个实施例中，一种方法包括提供半导体衬底并在半导体衬底上形成金属硅化物。 此外，该方法包括用含氢/氮化合物处理金属硅化物的暴露表面以在暴露表面上形成处理层，其中处理层的组成阻碍了暴露表面的氧化。 该方法可以进一步包括在经处理的层和金属硅化物的暴露表面上沉积介电层。

公开(公告)号：US20060024879A1

公开(公告)日：2006-02-02

申请号：US10902973

申请日：2004-07-31

Applicant: Chu-Yun Fu ,  Cheng-Hung Chang

Inventor： Chu-Yun Fu ,  Cheng-Hung Chang

IPC: H01L21/8238 ,  H01L21/31

CPC classification number: H01L21/0214 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7842 ,  H01L29/7843

Abstract: A MOSFET device pair with improved drive current and a method for producing the same to selectively introduce strain into a respective N-type and P-type MOSFET device channel region, the method including forming a compressive stressed nitride layer on over the P-type MOSFET device and a tensile stressed nitride layer on the N-type MOSFET device followed by forming a PMD layer having a less compressive or tensile stress.

Abstract translation: 一种具有改进的驱动电流的MOSFET器件对及其制造方法，用于选择性地将应变引入相应的N型和P型MOSFET器件沟道区，该方法包括在P型MOSFET上形成压应力氮化物层 器件和N型MOSFET器件上的拉伸应力氮化物层，随后形成具有较小压缩或拉伸应力的PMD层。