公开(公告)号：US20050153214A1

公开(公告)日：2005-07-14

申请号：US10755500

申请日：2004-01-12

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03C5/00 ,  G03F1/00 ,  G03F9/00 ,  G03G16/00

CPC classification number: G03F1/32 ,  G03F1/72

Abstract: In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.

Abstract translation: 根据本发明的目的，提供了一种用于修复具有接触图案的衰减相移掩模的新方法。 本发明蚀刻移相器掩模的石英衬底中的单个沟槽并去除移相器材料中空隙的冲击。 或者，本发明提供了首先常规地恢复其中存在针孔的接触孔的原始尺寸，然后在恢复的接触开口的暴露的基底中蚀刻单个或双沟槽。

公开(公告)号：US20100081065A1

公开(公告)日：2010-04-01

申请号：US12243311

申请日：2008-10-01

Applicant: Dong-Hsu Cheng ,  Chein-Hao Huang ,  Cheng-Ming Lin

Inventor： Dong-Hsu Cheng ,  Chein-Hao Huang ,  Cheng-Ming Lin

IPC: G03F1/00

CPC classification number: G03F1/80 ,  G03F1/32 ,  G03F1/36

Abstract: A method of fabricating a photomask is provided. A masking layer (e.g., chrome) is deposited on a substrate. A plasma treatment may be performed on the chrome layer. A photoresist layer may be formed on the treated chrome layer. In an embodiment, the plasma treatment roughens the chrome layer. In an embodiment, the plasma treatment forms a barrier film on the chrome layer. The photoresist layer may be used to pattern a sub-resolution assist feature.

Abstract translation: 提供一种制造光掩模的方法。 掩模层（例如铬）沉积在衬底上。 可以在铬层上进行等离子体处理。 可以在经处理的铬层上形成光致抗蚀剂层。 在一个实施例中，等离子体处理使铬层变粗糙。 在一个实施例中，等离子体处理在铬层上形成阻挡膜。 光致抗蚀剂层可用于图案化分解辅助特征。

公开(公告)号：US20090035902A1

公开(公告)日：2009-02-05

申请号：US11831031

申请日：2007-07-31

Applicant: Jeff J. Xu ,  Anthony Yen ,  Chia-Ta Hsieh ,  Chia-Chi Chung ,  Cheng-Ming Lin

Inventor： Jeff J. Xu ,  Anthony Yen ,  Chia-Ta Hsieh ,  Chia-Chi Chung ,  Cheng-Ming Lin

IPC: H01L21/336

CPC classification number: H01L21/823468 ,  H01L27/105 ,  H01L27/1052

Abstract: Provided is a method of fabricating a memory device. A substrate including an array region and a peripheral region is provided. A first feature and a second feature are formed in the array region. The first feature and the second feature have a first pitch. A plurality of spacers abutting each of the first feature and the second feature are formed. The plurality of spacers have a second pitch. A third feature in the peripheral region and a fourth and fifth feature in the array region are formed concurrently. The forth and fifth feature have the second pitch.

Abstract translation: 提供一种制造存储器件的方法。 提供了包括阵列区域和外围区域的基板。 第一特征和第二特征形成在阵列区域中。 第一特征和第二特征具有第一音调。 形成邻接第一特征和第二特征的多个间隔件。 多个间隔件具有第二间距。 外围区域的第三特征和阵列区域中的第四和第五特征同时形成。 第四和第五特征具有第二音调。

公开(公告)号：US20090023099A1

公开(公告)日：2009-01-22

申请号：US11779741

申请日：2007-07-18

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03C5/00

CPC classification number: G03F1/26 ,  G03F1/00 ,  G03F7/70433 ,  G03F9/7003

Abstract: A method of manufacturing a semiconductor device comprising forming an active region in a device substrate using a first phase shift mask (PSM) having a first patterned light shielding layer formed thereon, forming a polysilicon feature on the device substrate over the active region using a second PSM having a second patterned light shielding layer formed thereon, forming a contact feature on the polysilicon feature using a third PSM having a third patterned light shielding layer formed thereon, and forming a metal feature on the contact feature using a fourth PSM having a fourth patterned light shielding layer formed thereon, wherein at least one of the third and fourth patterned light shielding layers is patterned substantially similarly to at least one of the first and second patterned light shielding layers.

Abstract translation: 一种制造半导体器件的方法，其包括：在其上形成有第一图案化遮光层的第一相移掩模（PSM）在器件衬底中形成有源区，在有源区上使用第二相位移位掩模 PSM具有形成在其上的第二图案化遮光层，使用其上形成有第三图案化遮光层的第三PSM在多晶硅特征上形成接触特征，并使用具有第四图案化遮光层的第四图案形成金属特征 形成在其上的遮光层，其中第三和第四图案化遮光层中的至少一个图案基本上类似于第一和第二图案化遮光层中的至少一个。

公开(公告)号：US20080241708A1

公开(公告)日：2008-10-02

申请号：US11695319

申请日：2007-04-02

Applicant: Cheng-Ming Lin ,  Jen-Hsi Chiu

Inventor： Cheng-Ming Lin ,  Jen-Hsi Chiu

IPC: G03F1/00

CPC classification number: G03F1/34 ,  G03F1/36

Abstract: The present disclosure provides a mask. The mask includes a transparent substrate, a main feature, and an assistant feature. The main feature includes attenuating material and is disposed on the substrate. The assistant feature includes a sub-resolution feature providing a phase shift. The assistant feature is spaced a distance from the main feature. The assistant feature includes a trench defined by the substrate. The present disclosure further provides a method of fabricating the mask.

Abstract translation: 本公开提供了一种掩模。 掩模包括透明基板，主要特征和辅助特征。 主要特征包括衰减材料并设置在基板上。 辅助功能包括提供相移的子分辨率功能。 辅助功能与主要功能间隔一段距离。 辅助特征包括由衬底限定的沟槽。 本公开还提供了一种制造掩模的方法。

公开(公告)号：US06982134B2

公开(公告)日：2006-01-03

申请号：US10402196

申请日：2003-03-28

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G01F9/00 ,  G03C5/00

CPC classification number: G03F1/72

Abstract: A method for repairing a transparent photomask substrate and a transparent photomask substrate repaired in accord with the method employ when eliminating a defect within a transparent photomask substrate a multi-stepped aperture having a series of progressive steps which separate a series of progressive plateaus. Each plateau has a plateau width and a step height such as to enhance transparent photomask substrate transmittance within the multi-stepped aperture. The method provides for efficient repair of a transparent photomask substrate.

Abstract translation: 根据该方法修复透明光掩模基板和透明光掩模基板的方法，当消除透明光掩模基板内的缺陷时，采用具有分离一系列渐进平台的一系列渐进步骤的多阶孔。 每个平台具有平台宽度和台阶高度，以增强多台阶孔内的透明光掩模基板透射率。 该方法提供透明光掩模衬底的有效修复。

公开(公告)号：US20050032003A1

公开(公告)日：2005-02-10

申请号：US10637862

申请日：2003-08-09

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F1/32 ,  G03F7/70283 ,  G03F7/7045 ,  G03F7/70466 ,  Y10S430/143 ,  Y10S430/146

Abstract: A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.

Abstract translation: 用于曝光橡皮布光致抗蚀剂层的方法采用：（1）毯式光致抗蚀剂层的第一直接写入曝光，以在其中形成所需曝光图案的暴露外围子区域; 和（2）所述覆盖光致抗蚀剂层的第二掩蔽曝光，以在其中形成与所暴露的外围子区域重叠但不延伸超过所述暴露的外围子区域的所需曝光图案的被掩蔽的光曝光的体区子区域。 可以显影一次被曝光的一次直接写曝光的覆盖光致抗蚀剂层，以形成用于在不透明的边界衰减相移掩模内形成图案化不透明层边界的图案化光致抗蚀剂层。