公开(公告)号：US07498105B2

公开(公告)日：2009-03-03

申请号：US11160420

申请日：2005-06-23

Applicant: Yung-Feng Cheng ,  Yueh-Lin Chou ,  Chin-Lung Lin

Inventor： Yung-Feng Cheng ,  Yueh-Lin Chou ,  Chin-Lung Lin

IPC: G03F9/00

CPC classification number: G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  G03F1/44 ,  G03F1/84

Abstract: A method for checking a phase shift angle of a PSM is described. A calibration curve of a characteristic value of lithography performance with respect to the phase shift angle of a type of PSM is acquired. The patterns of a PSM of the type to be checked are transferred to a photoresist layer to form photoresist patterns, and the characteristic value is measured. The real phase shift angle of the PSM is derived based on the characteristic value according to the calibration curve.

Abstract translation: 描述了用于检查PSM的相移角的方法。 获取相对于PSM类型的相移角的光刻性能的特征值的校准曲线。 要检查的类型的PSM的图案被转印到光致抗蚀剂层以形成光致抗蚀剂图案，并且测量特征值。 基于根据校准曲线的特征值导出PSM的实际相移角。

公开(公告)号：US07312020B2

公开(公告)日：2007-12-25

申请号：US10605968

申请日：2003-11-10

Applicant: Chin-Lung Lin ,  Chuen Huei Yang ,  Ming-Jui Chen ,  Venson Lee

Inventor： Chin-Lung Lin ,  Chuen Huei Yang ,  Ming-Jui Chen ,  Venson Lee

IPC: G03F1/00

CPC classification number: G03F7/70283 ,  G03F1/34

Abstract: A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.

Abstract translation: 一种用于在光致抗蚀剂层中形成多个图案的光刻方法。 提供了包括多个透明主要特征，多个第一相移透明区域和多个第二相移透明区域的相移掩模。 每个透明主要特征被第一相移透明区域包围，而第二相移透明区域沿着透明主要特征的周边连续交错。 第一相移透明区域中的每一个相对于第二相移透明区域中的每一个具有相移。 执行曝光处理以用光照射相移掩模，使得在光致抗蚀剂层中形成对应于透明主要特征的图案。

公开(公告)号：US20060292455A1

公开(公告)日：2006-12-28

申请号：US11160420

申请日：2005-06-23

Applicant: Yung-Feng Cheng ,  Yueh-Lin Chou ,  Chin-Lung Lin

Inventor： Yung-Feng Cheng ,  Yueh-Lin Chou ,  Chin-Lung Lin

IPC: G03C5/00 ,  G03F9/00 ,  G03F1/00

CPC classification number: G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  G03F1/44 ,  G03F1/84

Abstract: A method for checking a phase shift angle of a PSM is described. A calibration curve of a characteristic value of lithography performance with respect to the phase shift angle of a type of PSM is acquired. The patterns of a PSM of the type to be checked are transferred to a photoresist layer to form photoresist patterns, and the characteristic value is measured. The real phase shift angle of the PSM is derived based on the characteristic value according to the calibration curve.

Abstract translation: 描述了用于检查PSM的相移角的方法。 获取相对于PSM类型的相移角的光刻性能的特征值的校准曲线。 要检查的类型的PSM的图案被转印到光致抗蚀剂层以形成光致抗蚀剂图案，并且测量特征值。 基于根据校准曲线的特征值导出PSM的实际相移角。

公开(公告)号：US07141337B2

公开(公告)日：2006-11-28

申请号：US10249372

申请日：2003-04-03

Applicant: Chin-Lung Lin ,  Chuen-Huei Yang ,  Ming-Jui Chen ,  Wen-Tien Hung

Inventor： Chin-Lung Lin ,  Chuen-Huei Yang ,  Ming-Jui Chen ,  Wen-Tien Hung

IPC: G01F9/00

CPC classification number: G03F1/34 ,  G03F1/30

Abstract: A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.

Abstract translation: 相移掩模包括透明衬底，半致密图案和致密图案。 半致密图案形成在包括相继排列的多个相移区域和非相移区域的透明基板上。 密集图案形成在包括多个非相移区域，相移区域和不透明区域的透明基板上。

公开(公告)号：US20060118232A1

公开(公告)日：2006-06-08

申请号：US11002152

申请日：2004-12-03

Applicant: Geng-Wen Chang ,  Mau-Yi Huang ,  Chin-Lung Lin ,  Chih-Chin Lu

Inventor： Geng-Wen Chang ,  Mau-Yi Huang ,  Chin-Lung Lin ,  Chih-Chin Lu

IPC: B29C47/00

CPC classification number: B32B5/28 ,  B29C43/027 ,  B29C70/345 ,  B29K2105/06 ,  B29K2105/0854 ,  B29L2009/00 ,  B29L2023/00 ,  B29L2031/3041 ,  B29L2031/3097 ,  B29L2031/7724 ,  B32B1/08 ,  B32B5/02 ,  B32B5/06 ,  B32B5/12 ,  B32B5/26 ,  B32B2250/05 ,  B32B2250/20 ,  B32B2255/02 ,  B32B2255/26 ,  B32B2262/106 ,  B32B2307/304 ,  B32B2307/3065 ,  B32B2307/54

Abstract: A manufacture method of a laminated hollow composite cylinder with an arranged ply angle is disclosed. The fiber in the hollow composite cylinder can be arranged in an angle Φ between 30° and 60° according the applications. Prepregs were cut into fan-shaped pieces and laminated in a metal mold to form an annular lamina assembly. The metal mold comprises a concave female mold and a convex male mold that both have a tapered angle complying with the ply angle Φ. Hot press molding with pressure over 140.6 kg/cm2 was then used for solidifying the lamina assembly to produce the composite hollow cylinders with the ply angle Φ. The laminated hollow composite cylinder can achieve excellent thermal and mechanical properties to meet design requirements.

Abstract translation: 公开了一种具有布置层叠角度的层压中空复合圆筒的制造方法。 根据应用，中空复合圆筒中的纤维可以以30°和60°之间的角度Phi布置。 将预浸料切成扇形片并层压在金属模具中以形成环形片组件。 金属模具包括凹形阴模和凸形阳模，两者均具有与帘布层角度Phi相符的锥形角度。 然后使用压力超过140.6kg / cm 2的热压成型固化层板组件以制备具有层角度Phi的复合中空圆柱体。 层压中空复合圆筒可以获得优异的热和机械性能，以满足设计要求。

公开(公告)号：US20050116845A1

公开(公告)日：2005-06-02

申请号：US10904545

申请日：2004-11-16

Applicant: Chin-Lung Lin

Inventor： Chin-Lung Lin

IPC: H03M1/10 ,  H03M1/80 ,  H03M1/06

CPC classification number: H03M1/1061 ,  H03M1/804

Abstract: A training method of a digital-analog converter is provided. The digital-analog converter comprises a plurality of parallel capacitors, each of which is floatingly coupled to a plurality of correcting capacitors. Two voltages outputted from the digital-analog converter are received and compared. When a latter output voltage is lower than or equal to a former output voltage, the correcting capacitor is used to correct the capacitor corresponding to the latter output voltage until the latter output voltage is higher than the former output voltage. When the latter output voltage is higher than the former output voltage, a new voltage is outputted from the digital-analog convert and compared with the latter output voltage. The steps of comparing and correcting are repeated until every latter output voltage is higher than every former output voltage.

Abstract translation: 提供了数模转换器的训练方法。 数模转换器包括多个并联电容器，每个并联电容器浮动耦合到多个校正电容器。 接收并比较从数模转换器输出的两个电压。 当后一个输出电压低于或等于前一个输出电压时，校正电容器用于校正与后一个输出电压相对应的电容，直到后一个输出电压高于前一个输出电压。 当后一个输出电压高于前一个输出电压时，从数模转换器输出一个新的电压，并与后一个输出电压进行比较。 重复比较和校正的步骤，直到每个后一个输出电压高于每个先前的输出电压。

公开(公告)号：US06420077B1

公开(公告)日：2002-07-16

申请号：US09767304

申请日：2001-01-23

Applicant: Ming-Jui Chen ,  Chin-Lung Lin

Inventor： Ming-Jui Chen ,  Chin-Lung Lin

IPC: G03F900

CPC classification number: G03F1/36 ,  G03F7/70483

Abstract: A contact hole model-based optical proximity correction method. The method includes building a contact hole model from the database obtained through a series of test patterns each having a plurality of contact holes of different line widths but identical distance of separation. Line width offsets due to proximity effect are eliminated by referring to the contact hole model.

Abstract translation: 基于接触孔模型的光学邻近校正方法。 该方法包括从通过一系列测试图形获得的数据库构建接触孔模型，每个测试图案具有多个不同线宽但接近距离的接触孔。 通过参考接触孔模型消除由于邻近效应引起的线宽偏移。

公开(公告)号：US06265121B1

公开(公告)日：2001-07-24

申请号：US09619966

申请日：2000-07-20

Applicant: Chin-Lung Lin

Inventor： Chin-Lung Lin

IPC: G03F900

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: A method of optical proximity correction. A main pattern is provided. The main pattern has a critical dimension. When the critical dimension is reduced to reach a first reference value or below, a serif/hammerhead is added onto the main pattern. When the critical dimension is further reduced to a second reference value or below, an assist feature is added onto the main pattern. The corrected pattern is then transferred to a layer on wafer with an improved fidelity.

公开(公告)号：US06013397A

公开(公告)日：2000-01-11

申请号：US186127

申请日：1998-11-04

Applicant: Chin-Lung Lin ,  Yao-Ching Ku

Inventor： Chin-Lung Lin ,  Yao-Ching Ku

IPC: G03F1/26 ,  G03F1/36 ,  G03F9/00

CPC classification number: G03F1/26 ,  G03F1/36

Abstract: A method for automatically forming a sub-resolution PSM is provided. The shielding layer is designed by adding an assist feature to a peripheral region of an original shielding layer formed on a quartz substrate. Using an etching process with a etching mask, a portion of the original shielding layer is removed to form an original pattern and an assist feature. The assist feature is separated from the original pattern by a distance. A photoresist layer is tormed on the rim of the shielding layer so that the original pattern, half of the assist feature, and an exposed portion of the quartz substrate between the original pattern and the assist feature are exposed. A selective etching process is performed to etch the exposed portion of the quartz substrate to a certain depth so that it behaves like a phase shifting layer. After removing the photoresist layer, the sub-resolution PSM including the integrated circuit pattern and the assist feature is complete.

Abstract translation: 提供了一种自动形成子分辨率PSM的方法。 通过向形成在石英基板上的原始屏蔽层的外围区域添加辅助特征来设计屏蔽层。 使用具有蚀刻掩模的蚀刻工艺，去除原始屏蔽层的一部分以形成原始图案和辅助特征。 辅助功能与原始图案分开一段距离。 光致抗蚀剂层被置于屏蔽层的边缘上，使原始图案（辅助特征的一半）和原始图案与辅助特征之间的石英基板的暴露部分露出。 执行选择性蚀刻处理以将石英衬底的暴露部分蚀刻到一定深度，使得其表现为类似于移相层。 在去除光致抗蚀剂层之后，包括集成电路图案和辅助特征的子分辨率PSM完成。

公开(公告)号：US5710076A

公开(公告)日：1998-01-20

申请号：US707038

申请日：1996-09-03

Applicant: Chang-Ming Dai ,  Horng-Chang Dai ,  Chin-Lung Lin

Inventor： Chang-Ming Dai ,  Horng-Chang Dai ,  Chin-Lung Lin

IPC: H01L21/336 ,  H01L21/762

CPC classification number: H01L29/6659 ,  H01L21/76224

Abstract: A process for globally planarizing the insulator used to fill narrow and wide shallow trenches, used in a MOSFET device, structure, has been developed. The process features smoothing the topography that exists after the insulator filling of narrow and shallow trenches, via use of a two layer planarization composite, consisting of an underlying, anti-reflective coating, which enhances the flow of an overlying photoresist layer. A two phase, RIE procedure is then employed, with the initial phase exposing thick insulator in narrow shallow trench regions, but leaving the two layer planarization composite protecting the thinner insulator in the wide shallow trenches. The second phase of the RIE procedure removes thick insulator, overlying the narrow shallow trenches, resulting in a planarized topography.

Abstract translation: 已经开发了用于全局平坦化用于填充用于MOSFET器件结构的窄且宽的浅沟槽的绝缘体的工艺。 该工艺特征是通过使用由下面的抗反射涂层组成的两层平坦化复合材料来平滑狭窄和浅沟槽的绝缘体填充之后存在的形貌，这增强了上覆的光致抗蚀剂层的流动。 然后采用两相RIE程序，其初始阶段在窄的浅沟槽区域中暴露厚绝缘体，但留下两层平面化复合材料保护较宽的沟槽中较薄的绝缘体。 RIE程序的第二阶段去除了厚的绝缘体，覆盖在窄的浅沟槽上，导致平面化的地形。