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51 条记录 (耗时 0.018 秒)

    Active manipulation of light in a silicon-on-insulator (SOI) structure
    22.
    发明申请
    Active manipulation of light in a silicon-on-insulator (SOI) structure 有权
    主动操纵绝缘体上硅（SOI）结构中的光

    公开(公告)号：US20050189591A1

    公开(公告)日：2005-09-01

    申请号：US11069852

    申请日：2005-02-28

    申请人： Prakash Gothoskar ,  Margaret Ghiron ,  Robert Montgomery ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine Yanushefski

    发明人： Prakash Gothoskar ,  Margaret Ghiron ,  Robert Montgomery ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine Yanushefski

    IPC分类号： G02B6/12 ,  H01L27/15

    CPC分类号： G02B6/12004 ,  G02F1/025 ,  G02F1/292 ,  G02F2001/294

    摘要： An arrangement for actively controlling, in two dimensions, the manipulation of light within an SOI-based optical structure utilizes doped regions formed within the SOI layer and a polysilicon layer of a silicon-insulator-silicon capacitive (SISCAP) structure. The regions are oppositely doped so as to form an active device, where the application of a voltage potential between the oppositely doped regions functions to modify the refractive index in the affected area and alter the properties of an optical signal propagating through the region. The doped regions may be advantageously formed to exhibit any desired “shaped” (such as, for example, lenses, prisms, Bragg gratings, etc.), so as to manipulate the propagating beam as a function of the known properties of these devices. One or more active devices of the present invention may be included within a SISCAP formed, SOI-based optical element (such as, for example, a Mach-Zehnder interferometer, ring resonator, optical switch, etc.) so as to form an active, tunable element.

    摘要翻译： 用于主动地控制SOI基光学结构内的光的操纵的布置利用形成在SOI层内的掺杂区域和硅绝缘体 - 硅电容（SISCAP）结构的多晶硅层。 这些区域相反地掺杂以形成有源器件，其中在相对掺杂区域之间施加电压电位用于改变受影响区域中的折射率并改变传播通过该区域的光信号的特性。 可以有利地形成掺杂区域以呈现任何期望的“成形”（例如，透镜，棱镜，布拉格光栅等），以便根据这些器件的已知特性来操纵传播光束。 本发明的一个或多个有源器件可以包括在形成SISCAP的SOI基光学元件（例如，诸如Mach-Zehnder干涉仪，环形谐振器，光学开关等）中，以形成活跃的 ，可调元素。

    Silicon nanotaper couplers and mode-matching devices
    25.
    发明申请
    Silicon nanotaper couplers and mode-matching devices 有权
    硅纳米器耦合器和模式匹配器件

    公开(公告)号：US20050201683A1

    公开(公告)日：2005-09-15

    申请号：US11054205

    申请日：2005-02-09

    申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine Yanushefski

    发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine Yanushefski

    IPC分类号： G02B6/122 ,  G02B6/14 ,  G02B6/26 ,  G02B6/34 ,  G02B6/42

    CPC分类号： G02B6/1228 ,  G02B6/4204

    摘要： An arrangement for providing optical coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer of a silicon-on-insulator (SOI) structure includes a silicon nanotaper structure formed in the upper silicon layer (SOI layer) of the SOI structure and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer, with a refractive index greater than the index of the dielectric insulating layer but less than the refractive index of silicon, is disposed so as to overly a portion of the dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space propagating optical signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement (such as a prism or grating) is disposed over the dielectric waveguide coupling layer and used to couple a propagating optical signal between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.

    摘要翻译： 用于在自由空间传播的光信号和形成在绝缘体上硅（SOI））结构的上硅层中的超薄硅波导之间提供光耦合的装置包括形成在上硅层（SOI层）中的硅纳米锥结构 ）和耦合到超薄硅波导。 具有大于介电绝缘层的折射率但小于硅的折射率的折射率的介质波导耦合层被布置成过度地在介电绝缘层的一部分中的相关部分 SOI层已被去除。 电介质波导耦合层的端部设置成与硅纳米锥的端部部分重叠以在自由空间传播的光信号和超薄硅波导之间形成模式转换区域。 自由空间光耦合装置（诸如棱镜或光栅）设置在介质波导耦合层之上，用于将传播的光信号耦合在自由空间与介质波导耦合层之间，然后耦合到超薄硅波导中。

    Wideband optical coupling into thin SOI CMOS photonic integrated circuit
    26.
    发明申请
    Wideband optical coupling into thin SOI CMOS photonic integrated circuit 有权
    宽带光耦合成薄SOI CMOS光子集成电路

    公开(公告)号：US20070274630A1

    公开(公告)日：2007-11-29

    申请号：US11652348

    申请日：2007-01-11

    申请人： Margaret Ghiron ,  Prakash Gothoskar ,  John Fangman ,  Robert Montgomery ,  Mary Nadeau

    发明人： Margaret Ghiron ,  Prakash Gothoskar ,  John Fangman ,  Robert Montgomery ,  Mary Nadeau

    IPC分类号： G02B6/26

    CPC分类号： G02B6/4231

    摘要： An arrangement for providing optical coupling into and out of a relatively thin silicon waveguide formed in the SOI layer of an SOI structure includes a lensing element and a defined reference surface within the SOI structure for providing optical coupling in an efficient manner. The input to the waveguide may come from an optical fiber or an optical transmitting device (laser). A similar coupling arrangement may be used between a thin silicon waveguide and an output fiber (either single mode fiber or multimode fiber).

    摘要翻译： 用于在SOI结构的SOI层中形成的相对薄的硅波导提供光耦合的装置包括在SOI结构内的透镜元件和限定的参考表面，用于以有效的方式提供光耦合。 波导的输入可以来自光纤或光发射装置（激光）。 可以在薄硅波导和输出光纤（单模光纤或多模光纤）之间使用类似的耦合布置。

    TAPERED STRUCTURE FOR PROVIDING COUPLING BETWEEN EXTERNAL OPTICAL DEVICE AND PLANAR OPTICAL WAVEGUIDE AND METHOD OF FORMING THE SAME
    27.
    发明申请
    TAPERED STRUCTURE FOR PROVIDING COUPLING BETWEEN EXTERNAL OPTICAL DEVICE AND PLANAR OPTICAL WAVEGUIDE AND METHOD OF FORMING THE SAME 有权
    用于提供外部光学装置与平面光波导之间的耦合的光栅结构及其形成方法

    公开(公告)号：US20050175286A1

    公开(公告)日：2005-08-11

    申请号：US10775872

    申请日：2004-02-10

    申请人： Vipulkumar Patel ,  Prakash Gothoskar ,  Robert Montgomery ,  Margaret Ghiron

    发明人： Vipulkumar Patel ,  Prakash Gothoskar ,  Robert Montgomery ,  Margaret Ghiron

    IPC分类号： G02B6/10 ,  G02B6/34 ,  G02B6/42

    CPC分类号： G02B6/42 ,  G02B6/34 ,  G02B6/4214

    摘要： Methods of forming a tapered evanescent coupling region for use with a relatively thin silicon optical waveguide formed with, for example, an SOI structure. A tapered evanescent coupling region is formed in a silicon substrate that is used as a coupling substrate, the coupling substrate thereafter joined to the SOI structure. A gray-scale photolithography process is used to define a tapered region in photoresist, the tapered pattern thereafter transferred into the silicon substrate. A material exhibiting a lower refractive index than the silicon optical waveguide layer (e.g., silicon dioxide) is then used to fill the tapered opening in the substrate. Advantageously, conventional silicon processing steps may be used to form coupling facets in the silicon substrate (i.e., angled surfaces, V-grooves) in an appropriate relation to the tapered evanescent coupling region. The coupling facets may be formed contiguous with the tapered evanescent coupling region, or formed through the opposing side of the silicon substrate.

    摘要翻译： 形成锥形渐逝耦合区域的方法，用于与例如SOI结构形成的相对薄的硅光波导一起使用。 在用作耦合衬底的硅衬底中形成锥形渐逝耦合区，然后耦合衬底连接到SOI结构。 使用灰度光刻工艺来限定光致抗蚀剂中的锥形区域，此后的锥形图案转移到硅衬底中。 然后使用显示比硅光波导层（例如二氧化硅）低的折射率的材料来填充衬底中的锥形开口。 有利地，可以使用常规的硅处理步骤以与锥形渐逝耦合区域适当的关系在硅衬底（即成角度的表面，V形槽）中形成耦合面。 耦合面可以形成为与锥形渐逝耦合区域相邻，或者通过硅衬底的相对侧形成。

    Low loss SOI/CMOS compatible silicon waveguide
    28.
    发明授权
    Low loss SOI/CMOS compatible silicon waveguide 有权
    低损耗SOI / CMOS兼容硅波导

    公开(公告)号：US07499620B2

    公开(公告)日：2009-03-03

    申请号：US11516217

    申请日：2006-09-06

    申请人： Vipulkumar Kantilal Patel ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Margaret Ghiron

    发明人： Vipulkumar Kantilal Patel ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Margaret Ghiron

    IPC分类号： G02B6/10

    CPC分类号： G02F1/025

    摘要： A method and structure for reducing optical signal loss in a silicon waveguide formed within a silicon-on-insulator (SOI) structure uses CMOS processing techniques to round the edges/corners of the silicon material along the extent of the waveguiding region. One exemplary set of processes utilizes an additional, sacrificial silicon layer that is subsequently etched to form silicon sidewall fillets along the optical waveguide, the fillets thus “rounding” the edges of the waveguide. Alternatively, the sacrificial silicon layer can be oxidized to consume a portion of the underlying silicon waveguide layer, also rounding the edges. Instead of using a sacrificial silicon layer, an oxidation-resistant layer may be patterned over a blanket silicon layer, the pattern defined to protect the optical waveguiding region. A thermal oxidation process is then used to convert the exposed portion of the silicon layer into silicon dioxide, forming a bird's beak structure at the edges of the silicon layer, thus defining the “rounded” edges of the silicon waveguiding structure.

    摘要翻译： 用于减少在绝缘体上硅（SOI）结构中形成的硅波导中的光信号损耗的方法和结构使用CMOS处理技术来沿着波导区域的范围舍入硅材料的边缘/角。 一个示例性的工艺集合利用附加的牺牲硅层，其随后被蚀刻以沿着光波导形成硅侧壁圆角，因此圆角“波浪”了波导的边缘。 或者，牺牲硅层可以被氧化以消耗下面的硅波导层的一部分，也是边缘的四周。 代替使用牺牲硅层，可以在覆盖硅层上图案化抗氧化层，所述图案被限定为保护光波导区域。 然后使用热氧化工艺将硅层的暴露部分转化成二氧化硅，在硅层的边缘处形成鸟的喙结构，从而限定硅波导结构的“圆形”边缘。

    Silicon modulator offset tuning arrangement
    29.
    发明授权
    Silicon modulator offset tuning arrangement 有权
    硅调制器偏移调谐布置

    公开(公告)号：US07447395B2

    公开(公告)日：2008-11-04

    申请号：US11810591

    申请日：2007-06-06

    申请人： Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Paulius Mindaugas Mosinskis ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Mark Webster

    发明人： Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Paulius Mindaugas Mosinskis ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Mark Webster

    IPC分类号： G02B6/12 ,  G02F1/295

    CPC分类号： G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

    摘要： A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.

    摘要翻译： 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一种可以容易地与硅基光学调制器结合。 对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率。