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公开(公告)号：US10312447B2
公开(公告)日：2019-06-04
申请号：US15696194
申请日：2017-09-06
Applicant: FUJIFILM CORPORATION
Inventor： Tetsu Kitamura , Yosuke Yamamoto , Fumiko Tamakuni , Yuta Shigenoi , Takashi Goto , Tetsuya Watanabe
IPC: H01L51/00 , C08L65/00 , H01L29/786 , H01L51/05 , C08G61/12 , C09D165/00
Abstract: Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater. D-A (1)
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公开(公告)号：US10276806B2
公开(公告)日：2019-04-30
申请号：US15943968
申请日：2018-04-03
Applicant: FUJIFILM Corporation , The University of Tokyo
Inventor： Hiroaki Tsuyama , Kimiatsu Nomura , Yoshihisa Usami , Masatoshi Yumoto , Tetsu Kitamura , Masashi Koyanagi , Tetsuya Watanabe , Toshihiro Okamoto , Junichi Takeya
IPC: C07D495/14 , C09B57/00 , C09D5/24 , H01L51/00 , H01L51/05
Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
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公开(公告)号：US10115911B2
公开(公告)日：2018-10-30
申请号：US15274016
申请日：2016-09-23
Applicant: FUJIFILM Corporation , The University of Tokyo
Inventor： Hiroaki Tsuyama , Kimiatsu Nomura , Yoshihisa Usami , Masatoshi Yumoto , Tetsu Kitamura , Masashi Koyanagi , Tetsuya Watanabe , Toshihiro Okamoto , Junichi Takeya
IPC: C07D495/14 , C09B57/00 , C09D5/24 , H01L51/00 , H01L51/05
Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
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公开(公告)号：US09792944B2
公开(公告)日：2017-10-17
申请号：US14944345
申请日：2015-11-18
Applicant: FUJIFILM Corporation
Inventor： Hidehiro Mochizuki , Tetsuya Watanabe
CPC classification number: G11B7/246 , C09B5/347 , C09B57/00 , C09B69/10 , C09B69/105 , C09B69/109 , G11B7/24038 , G11B7/245
Abstract: A recording material includes a dye-bonded polymer compound which contains a polymer compound to which a one-photon absorption dye is bonded, and a glass transition temperature of the recording material is higher than 200° C. An optical information recording medium includes a recording layer and an intermediate layer adjacent to the recording layer, and the recording layer contains the above-described recording material.
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Patent Agency Ranking
25.发明申请COLORING COMPOSITION, CURED FILM, COLOR FILTER, METHOD FOR PRODUCING COLOR FILTER, SOLID-STATE IMAGING ELEMENT, AND IMAGE DISPLAY DEVICE 审中-公开彩色组合物，固化膜，彩色滤光片，生产彩色滤光片的方法，固态成像元件和图像显示装置公开(公告)号：US20160116838A1
公开(公告)日：2016-04-28
申请号：US14988908
申请日：2016-01-06
Applicant: FUJIFILM Corporation
Inventor： Akihiro Hara , Tetsuya Watanabe , Yuushi Kaneko , Suguru Samejima , Junichi Ito , Naotsugu Muro , Kazuya Oota , Yoshinori Taguchi
CPC classification number: G03F7/0007 , C08F2/44 , C08F2/48 , C09B11/12 , C09B11/24 , C09B23/04 , C09B23/06 , C09B23/083 , C09B57/00 , C09B57/007 , C09B69/008 , C09B69/06 , C09B69/103 , C09B69/105 , C09B69/109 , C09K11/06 , C09K2211/1022 , C09K2211/1029 , C09K2211/188 , G02B5/223 , G03F7/031 , G03F7/105 , G03F7/20 , G03F7/32 , G03F7/36
Abstract: Provided are a coloring composition having improved heat resistance; and a cured film, a color filter, a method for producing a color filter, and a solid-state imaging element and an image display device, each of which uses the coloring composition.The coloring composition includes a dye (A) represented by the following General Formula (I) and a polymerizable compound (B). In General Formula (I), Q represents an (m+n)-valent linking group, R represents a substituent, represents a dye residue, m represents an integer of 0 to 6, n represents an integer of 2 to 8, and (m+n) represents an integer of 2 to 8. In the case where m is 2 or more, a plurality of R's may be different from each other, and in the case where n is 2 or more, a plurality of D's may be different from each other. (R)m-Q-(D)n General Formula(I)
Abstract translation: 提供具有改善的耐热性的着色组合物; 以及固化膜，滤色器，滤色器的制造方法以及使用着色组合物的固体摄像元件和图像显示装置。 着色组合物包括由以下通式（I）表示的染料（A）和可聚合化合物（B）。 在通式（I）中，Q表示（m + n）价的连接基，R表示取代基，表示染料残基，m表示0〜6的整数，n表示2〜8的整数，（ m + n）表示2〜8的整数。在m为2以上的情况下，多个R可以彼此不同，在n为2以上的情况下，多个D可以 彼此不同。 （R）m-Q-（D）n通式（I）
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公开(公告)号：US11081651B2
公开(公告)日：2021-08-03
申请号：US16588574
申请日：2019-09-30
Applicant: FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
Inventor： Kenji Shirokane , Eiji Fukuzaki , Yukio Tani , Fumiko Tamakuni , Yoshihisa Usami , Tetsuya Watanabe , Toshihiro Okamoto , Junichi Takeya
IPC: H01L51/00 , H01B1/12 , B05D5/12 , C07D495/16 , C07D495/22 , C07D517/22 , C08G61/12 , H01L51/05
Abstract: An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10): in which X1 represents a nitrogen atom or CRa, and rings A to B each represent a specific nitrogen-containing ring; Y1 represents an oxygen atom, a sulfur atom, CRb2, or NRc; V1 represents NRd, an oxygen atom, a sulfur atom, or a selenium atom; Ra to Rd each represent a hydrogen atom or a substituent; R1 represents a specific substituent, and p is an integer of 0 to 2; n represents 1 or 2; and * represents a bonding site.
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公开(公告)号：US10985327B2
公开(公告)日：2021-04-20
申请号：US16358910
申请日：2019-03-20
Applicant: FUJIFILM Corporation
Inventor： Takashi Goto , Eiji Fukuzaki , Tetsuya Watanabe
IPC: H01L51/00 , C07D517/14 , C07D493/14 , C07D495/14 , C07D513/14 , C07D498/14 , H01L29/786 , H01L51/05
Abstract: Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat.
Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.-
公开(公告)号：US10270044B2
公开(公告)日：2019-04-23
申请号：US16180118
申请日：2018-11-05
Applicant: FUJIFILM Corporation , The University of Tokyo
Inventor： Hiroaki Tsuyama , Kimiatsu Nomura , Yoshihisa Usami , Masatoshi Yumoto , Tetsu Kitamura , Masashi Koyanagi , Tetsuya Watanabe , Toshihiro Okamoto , Junichi Takeya
IPC: C07D495/14 , C09B57/00 , C09D5/24 , H01L51/00 , H01L51/05
Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
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公开(公告)号：US10131656B2
公开(公告)日：2018-11-20
申请号：US15887174
申请日：2018-02-02
Applicant: FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
Inventor： Hiroaki Tsuyama , Masashi Koyanagi , Eiji Fukuzaki , Masatoshi Yumoto , Yoshihisa Usami , Tetsuya Watanabe , Toshihiro Okamoto , Junichi Takeya
IPC: C07D495/18 , H01L51/00 , H01L29/00 , C07D471/02 , C07D495/14 , H01L29/786 , H01L51/05 , H01L29/45 , H01L29/768 , C09B57/08
Abstract: An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).
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