公开(公告)号：US20150122789A1

公开(公告)日：2015-05-07

申请号：US14596507

申请日：2015-01-14

Applicant: FIRST SOLAR, INC

Inventor： Markus Gloeckler ,  Imran Khan ,  Jigish Trivedi ,  Thomas Truman

IPC: G01R31/40 ,  H01L31/18

CPC classification number: H02S50/00 ,  H01L31/048 ,  H01L31/1864 ,  H02S50/15 ,  Y02E10/50 ,  Y02P70/521

Abstract: A apparatus and method for manufacturing a photovoltaic module includes components for heating the module and applying an electrical bias to the module to improve photovoltaic module performance and manufacture multiple photovoltaic modules with similar performance.

Abstract translation: 用于制造光伏模块的装置和方法包括用于加热模块并向模块施加电偏压以改善光伏模块性能并且制造具有相似性能的多个光伏模块的组件。

公开(公告)号：US08940556B2

公开(公告)日：2015-01-27

申请号：US13748053

申请日：2013-01-23

Applicant: First Solar, Inc.

Inventor： Imran Khan ,  Markus Gloeckler ,  Jigish Trivedi ,  Thomas Truman

IPC: H01L21/66 ,  H01L21/00 ,  H05B1/00 ,  H01L31/048 ,  H01L31/18 ,  G01R31/40

CPC classification number: H02S50/00 ,  H01L31/048 ,  H01L31/18 ,  H01L31/1864 ,  H02S50/15 ,  H05B1/00 ,  Y02E10/50 ,  Y02P70/521

Abstract: A apparatus and method for manufacturing a photovoltaic module includes components for heating the module and applying an electrical bias to the module to improve photovoltaic module performance and manufacture multiple photovoltaic modules with similar performance.

Abstract translation: 用于制造光伏模块的装置和方法包括用于加热模块并向模块施加电偏压以改善光伏模块性能并且制造具有相似性能的多个光伏模块的组件。

公开(公告)号：US20140261687A1

公开(公告)日：2014-09-18

申请号：US14209589

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Dan Damjanovic ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/0296 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

Abstract translation: 描述了完成的形成它的光伏器件和方法，其中通过存在牺牲助熔层来减轻窗口层进入吸收层的磁化。

公开(公告)号：US20140216550A1

公开(公告)日：2014-08-07

申请号：US14171020

申请日：2014-02-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

Abstract translation: 光电器件包括衬底结构和p型半导体吸收层，该衬底结构包括CdSSe层。 光电器件可以替代地包括CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSSe层。 该方法包括在CdSSe层上形成p型吸收层。

公开(公告)号：US20130153031A1

公开(公告)日：2013-06-20

申请号：US13717789

申请日：2012-12-18

Applicant: FIRST SOLAR, INC

Inventor： Yu Yang ,  Jigish Trivedi

IPC: H01L31/052 ,  H01L31/18

CPC classification number: H01L31/1884 ,  H01L31/02168 ,  H01L31/02366 ,  H01L31/0547 ,  Y02E10/52

Abstract: A photovoltaic device comprising a substrate which has a porous first surface and a transparent conductive oxide layer located on a second surface opposite the first surface. A method of manufacturing the device is also described.

Abstract translation: 一种光电器件，包括具有多孔第一表面的衬底和位于与第一表面相对的第二表面上的透明导电氧化物层。 还描述了制造该装置的方法。

公开(公告)号：US20240030367A1

公开(公告)日：2024-01-25

申请号：US18372567

申请日：2023-09-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US10243092B2

公开(公告)日：2019-03-26

申请号：US15612078

申请日：2017-06-02

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US09799784B2

公开(公告)日：2017-10-24

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.

公开(公告)号：US09698285B2

公开(公告)日：2017-07-04

申请号：US14171020

申请日：2014-02-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US09437760B2

公开(公告)日：2016-09-06

申请号：US14209589

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Daniel Damjanovic ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/0296 ,  H01L31/18 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

Abstract translation: 描述了完成的形成它的光伏器件和方法，其中通过存在牺牲助熔层来减轻窗口层进入吸收层的磁化。