摘要:
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
摘要:
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
摘要:
Method for manufacturing electromagnetic radiation reflecting devices, said method comprising the steps of: a) providing a silicon substrate defined by at least one first free surface, b) forming on said first surface a layer of protective material provided with an opening which exposes a region of the first free surface, and c)etching the region of the free surface by means of an anisotropic agent to remove at least one portion of the substrate and define a second free surface of the substrate inclined in relation to said first surface. Furthermore, said first free surface is parallel to the crystalline planes {110} of silicon substrate and said step (c) comprises a progressing step of the anisotropic agent such that the second free surface resulting from the etching step is parallel to the planes {100} of said substrate.
摘要:
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
摘要:
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
摘要:
A process for manufacturing a suspended structure of semiconductor material envisages the steps of: providing a monolithic body of semiconductor material having a front face; forming a buried cavity within the monolithic body, extending at a distance from the front face and delimiting, with the front face, a surface region of the monolithic body, said surface region having a first thickness; carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body towards the surface region and thus form a suspended structure above the buried cavity, the suspended structure having a second thickness greater than the first thickness. The thickening thermal treatment is an annealing treatment.
摘要:
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
摘要:
In a process for manufacturing a SOI wafer, the following steps are envisaged: forming, in a monolithic body of semiconductor material having a front face, a buried cavity, which extends at a distance from the front face and delimits, with the front face, a surface region of the monolithic body, the surface region being surrounded by a bulk region and forming a flexible membrane suspended above the buried cavity; forming, through the monolithic body, at least one access passage, which reaches the buried cavity; and filling the buried cavity uniformly with an insulating region. The surface region is continuous and formed by a single portion of semiconductor material, and the buried cavity is contained and completely insulated within the monolithic body; the step of forming at least one access passage is performed after the step of forming a buried cavity.
摘要:
The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the flat of the wafer; carrying out an anisotropic etch in TMAH of the wafer, using said holed mask, thus forming a cavity, the cross section of which has the shape of an upside-down isosceles trapezium; and carrying out a chemical vapor deposition using TEOS, thus forming a TEOS layer which completely closes the openings of the holed mask and defines a diaphragm overlying the cavity and on which a suspended integrated structure can subsequently be manufactured.
摘要:
A process of forming on a monocrystalline-silicon body an etching-aid region of polycrystalline silicon; forming, on the etching-aid region a nucleus region of polycrystalline silicon surrounded by a protective structure having an opening extending as far as the etching-aid region; TMAH-etching the etching-aid region and the monocrystalline body to form a tub-shaped cavity; removing the top layer of the protective structure; and growing an epitaxial layer on the monocrystalline body and the nucleus region. The epitaxial layer, of monocrystalline type on the monocrystalline body and of polycrystalline type on the nucleus region, closes upwardly the etching opening, and the cavity is thus completely embedded in the resulting wafer.