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    Surface charge storage and transfer devices
    25.
    发明授权
    Surface charge storage and transfer devices 失效
    表面充电储存和转移装置

    公开(公告)号：US3902187A

    公开(公告)日：1975-08-26

    申请号：US37575273

    申请日：1973-07-02

    Applicant: GEN ELECTRIC

    Inventor： ENGELER WILLIAM E ,  TIEMANN JEROME J

    IPC: G11C19/28 ,  G11C27/04 ,  H01L29/768 ,  H01L29/78

    CPC classification number: H01L29/76841 ,  G11C19/282 ,  G11C27/04

    Abstract: A conductor-insulator-semiconductor (CIS) information storage device employing a semiconductor substrate of one-conductivity type with a surface-adjacent region of an opposite-conductivity type as the storage media is disclosed. Means are disclosed for storing information in the form of electrical charges in a plurality of charge storage regions electrically isolated from each other by non-conducting barrier regions. Electrical charges are transferred from one storage region to another by controllably removing the non-conducting barrier regions therebetween. Various means for storing and transferring electrical charges are disclosed.

    Charge coupled imaging device with separate sensing and shift-out arrays
    26.
    发明授权
    Charge coupled imaging device with separate sensing and shift-out arrays 失效
    电荷耦合成像装置，具有独立的感测和移出阵列

    公开(公告)号：US3898685A

    公开(公告)日：1975-08-05

    申请号：US39163473

    申请日：1973-08-27

    Applicant: GEN ELECTRIC

    Inventor： ENGELER WILLIAM E ,  TIEMANN JEROME J

    IPC: H01L27/105 ,  H01L27/148 ,  H01L17/00 ,  H01L19/00

    CPC classification number: H01L27/1057 ,  H01L27/14831

    Abstract: Method and apparatus for moving selected electrical charges along the surface-adjacent portions of a semiconductor substrate are described. In one embodiment, a conductor-insulatorsemiconductor structure including an array of cellules formed in the insulator layer substantially defines potential wells in the semiconductor for storing electrical charges. Electrical charges are stored in the potential wells by an electric field produced from a voltage applied to an overlying conductor member. By arranging the cellules in rows and columns with row-associated ''''hold'''' lines, row-associated ''''charge transfer channels'''' and column-associated transfer means, selected electrical charges may be transferred along the surface-adjacent portions of the semiconductor underlying the charge transfer channels while other charges continue to be stored. Electrical charges representative of analog or digital information may be selectively introduced or removed from the potential wells by a single column-associated transfer means.

    Abstract translation: 描述了沿着半导体衬底的表面相邻部分移动所选电荷的方法和装置。 在一个实施例中，包括形成在绝缘体层中的阵列阵列的导体 - 绝缘体半导体结构基本上限定了用于存储电荷的半导体中的势阱。 通过由施加到上覆导体构件的电压产生的电场将电荷存储在势阱中。 通过将具有行关联的“保持”行，行相关联的“电荷转移通道”和列相关联的转移装置排列成行和列，可以将选定的电荷沿着位于电荷下方的半导体的表面相邻部分 传输频道，而其他费用继续存储。 代表模拟或数字信息的电荷可以通过单个列相关联的传输装置从势阱中选择性地引入或去除。

    Variable capacitance semiconductor devices
    27.
    发明授权
    Variable capacitance semiconductor devices 失效
    可变电容半导体器件

    公开(公告)号：US3890631A

    公开(公告)日：1975-06-17

    申请号：US42839473

    申请日：1973-12-26

    Applicant: GEN ELECTRIC

    Inventor： TIEMANN JEROME J

    IPC: H01L29/94 ,  H01L17/00

    CPC classification number: H01L29/94

    Abstract: A high frequency CIS capacitance device having a substrate of one conductivity type provides a capacitance for a high frequency signal applied across a pair of capacitance electrodes thereof which is dependent on the voltages applied to a pair of control electrodes, each connected to the surface adjacent region of the substrate underlying one of the pair of capacitance electrodes of the device through a respective channel region of opposite conductivity type. Means are provided for alternatively establishing one or the other channel regions of opposite conductivity type to establish values of capacitances dependent on the voltages applied to the control electrodes. Composite devices are formed of elemental devices such as described in which the capacitance of the composite device is the sum of the capacitance of the elemental devices and is variable in discrete increments to provide a large number of discrete values of capacitance in response to digital signals applied to a minimum number of control electrodes connected thereto.

    Abstract translation: 具有一种导电类型的衬底的高频CIS电容器件提供了跨越其一对电容电极施加的高频信号的电容，其取决于施加到一对控制电极的电压，每个控制电极连接到表面相邻区域 通过相反导电类型的相应通道区域将器件的一对电容电极中的一个电极放置在衬底之下。 提供了用于替代地建立相反导电类型的一个或另一个沟道区的装置，以建立取决于施加到控制电极的电压的电容值。 复合器件​​由诸如所描述的元件器件形成，其中复合器件的电容是元件器件的电容的总和，并且以离散增量可变，以响应于施加的数字信号提供大量的电容离散值 到与其连接的最小数量的控制电极。

    Magnetic transducer having a composite magnetic core structure
    28.
    发明授权
    Magnetic transducer having a composite magnetic core structure 失效
    具有复合磁性核心结构的磁性传感器

    公开(公告)号：US3639699A

    公开(公告)日：1972-02-01

    申请号：US3639699D

    申请日：1970-02-27

    Applicant: GEN ELECTRIC

    Inventor： TIEMANN JEROME J

    IPC: G11B5/245 ,  G11B5/31 ,  G11B5/22

    CPC classification number: G11B5/313 ,  G11B5/2452 ,  G11B5/3143

    Abstract: A magnetic transducer for read-write applications is disclosed in which a composite core having two closely spaced legs is provided with each leg having one layer of magnetic material of higher permeability and lower saturation flux density than the second layer of that leg. The read-write conductor means is positioned between the two legs and is thereby inductively coupled to the core. The higher permeability layer is narrow in a direction perpendicular to both the length of the leg and the thickness of the layer, is adjacent the conductor means and is saturated at flux densities encountered in writing so that the wider lower permeability outer layers of the two legs are effective during writing and the higher permeability narrower layers are effective or dominant during reading. In a modification, a composite shim is employed in the gap of a more conventional stacked lamination head to obtain some of the advantages of the present invention.

    Abstract translation: 公开了一种用于读写应用的磁换能器，其中具有两个紧密间隔的腿的复合芯设置有每个腿具有比该腿的第二层更高的磁导率和更低的饱和磁通密度的一层磁性材料。 读写导体装置位于两条腿之间，从而电感耦合到芯。 较高的导磁率层在垂直于腿的长度和层的厚度的方向上较窄，与导体装置相邻并且以书面遇到的通量密度饱和，使得两条腿的较宽的较低的透气性外层 在书写期间是有效的，并且较高的磁导率较窄的层在读取期间是有效的或占优势的 在一个变型中，复合垫片用于较传统的层压头的间隙中以获得本发明的一些优点。

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