公开(公告)号：US09123773B1

公开(公告)日：2015-09-01

申请号：US14461015

申请日：2014-08-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： HongLiang Shen ,  Fangyu Wu ,  Haigou Huang ,  Xusheng Wu ,  Changyong Xiao ,  Wanxum He

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/76224 ,  H01L21/3086 ,  H01L21/76232 ,  H01L29/66795

Abstract: Methods of forming a T-shaped SBD using a single-mask process flow are disclosed. Embodiments include providing a substrate having STI regions; forming a hard mask layer over the substrate and the STI regions, the hard mask having an opening laterally separated from the STI regions; forming a recess in the substrate through the opening, the recess having a first width; forming spacers on sidewalls of the recess, with a gap therebetween; forming a trench in the substrate through the gap, the trench having a second width less than the first; removing the spacers; removing the hard mask layer; filling the trench and the recess with an oxide layer, forming a T-shaped STI region; forming another hard mask layer on a portion of the T-shaped STI region; and revealing a Fin by removing portions of the STI regions and the T-shaped STI region.

Abstract translation: 公开了使用单掩模工艺流程形成T形SBD的方法。 实施例包括提供具有STI区域的基板; 在所述基板和所述STI区域上形成硬掩模层，所述硬掩模具有与所述STI区域横向分离的开口; 通过所述开口在所述基板中形成凹部，所述凹部具有第一宽度; 在凹槽的侧壁上形成间隔物，其间具有间隙; 通过所述间隙在所述衬底中形成沟槽，所述沟槽具有小于所述第一宽度的第二宽度; 去除垫片; 去除硬掩模层; 用氧化物层填充沟槽和凹部，形成T形STI区域; 在T形STI区域的一部分上形成另一个硬掩模层; 并且通过去除STI区域和T形STI区域的部分来显露Fin。

公开(公告)号：US20140227858A1

公开(公告)日：2014-08-14

申请号：US13765723

申请日：2013-02-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hongliang Shen ,  Kyutae Na ,  Sandeep Gaan ,  Hsin-Neng Tai ,  Weihua Tong ,  Sang Cheol Han ,  Tae Hoon Kim ,  Ja Hyung Han ,  Haigou Huang ,  Changyong Xiao ,  Huang Liu ,  Seung Yeon Kim

IPC: H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/02123 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/0886

Abstract: Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a “buffer zone” or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress thin film fill material that controls stresses and crack formation on the devices. Further, the gap layer ensures a certain spatial distance between TSVs and transistors to reduce the adverse effects of temperature excursion.

Abstract translation: 本发明的方面通常涉及用于形成半导体器件的方法，例如在TSV和晶体管之间具有“缓冲区”或间隙层的TSV器件。 间隙层通常填充有低应力薄膜填充材料，其控制器件上的应力和裂纹形成。 此外，间隙层确保TSV和晶体管之间的一定空间距离，以减少温度偏移的不利影响。