公开(公告)号：US20180190476A1

公开(公告)日：2018-07-05

申请号：US15890463

申请日：2018-02-07

申请人： H.C. STARCK, INC.

发明人： Gary Alan Rozak ,  Mark E. Gaydos

IPC分类号： H01J37/34 ,  B22F3/15 ,  B22F3/24 ,  C23C14/34 ,  C22C27/04 ,  B22F1/00

CPC分类号： H01J37/3429 ,  B22F1/0003 ,  B22F3/15 ,  B22F3/24 ,  B22F2003/153 ,  B22F2003/247 ,  B22F2301/20 ,  B22F2998/10 ,  C22C27/04 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3491

摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

公开(公告)号：US20180076011A1

公开(公告)日：2018-03-15

申请号：US15804365

申请日：2017-11-06

申请人： H.C. STARCK INC.

发明人： Gary Alan Rozak ,  Mark E. Gaydos ,  Patrick Alan Hogan ,  Shuwei Sun

IPC分类号： H01J37/34 ,  C03C17/40

CPC分类号： H01J37/3429 ,  B22F2998/10 ,  C03C17/40 ,  C22C1/045 ,  C22C27/04 ,  C23C14/0688 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  C23C14/5873 ,  C23G1/106 ,  C23G1/205 ,  G06F3/044 ,  G06F2203/04103 ,  Y10T428/12014 ,  Y10T428/12021 ,  Y10T428/12597 ,  Y10T428/31678 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/18

摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

公开(公告)号：US20160196962A1

公开(公告)日：2016-07-07

申请号：US15067652

申请日：2016-03-11

申请人： H.C. Starck, Inc.

发明人： Gary Alan Rozak ,  Mark E. Gaydos ,  Christopher Michaluk

IPC分类号： H01J37/34 ,  B22F3/24 ,  B22F3/15 ,  C22C27/04 ,  B22F1/00

CPC分类号： H01J37/3429 ,  B22F1/0003 ,  B22F3/15 ,  B22F3/24 ,  B22F7/064 ,  B22F2003/153 ,  B22F2003/247 ,  B22F2301/20 ,  B22F2998/10 ,  C22C1/045 ,  C22C27/04 ,  C23C14/3407 ,  C23C14/3414 ,  C23C24/04

摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including a first metal (e.g., a refractory metal such as molybdenum in an amount greater than about 30 percent by weight) and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being prepared free of any microstructure derived from a diffusion bond of an added loose powder. A process for making the target includes hot isostatically pressing (e.g., below a temperature of 1080° C.), consolidated preform blocks that, prior to pressing, have interposed between the consolidated powder metal blocks at least one continuous solid interface portion. The at least one continuous solid interface portion may include a cold spray body, which may be a mass of cold spray deposited powders on a surface a block, a sintered preform, a compacted powder body (e.g., a tile), or any combination thereof.

公开(公告)号：US20150332903A1

公开(公告)日：2015-11-19

申请号：US14813732

申请日：2015-07-30

申请人： H.C. Starck Inc.

发明人： Gary Alan Rozak ,  Mark E. Gaydos ,  Patrick Alan Hogan ,  Shuwei Sun

IPC分类号： H01J37/34 ,  C23C14/58 ,  G06F3/044 ,  C23C14/34

CPC分类号： H01J37/3429 ,  B22F2998/10 ,  C03C17/40 ,  C22C1/045 ,  C22C27/04 ,  C23C14/0688 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  C23C14/5873 ,  C23G1/106 ,  C23G1/205 ,  G06F3/044 ,  G06F2203/04103 ,  Y10T428/12014 ,  Y10T428/12021 ,  Y10T428/12597 ,  Y10T428/31678 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/18

摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

摘要翻译： 本发明涉及包括50原子％或更多的钼，钛的第二金属元素和铬​​或钽的第三金属元素以及由溅射靶制备的沉积膜的溅射靶。 在本发明的优选方面，溅射靶包括富含钼的相，富含钛的相和富含第三金属元素的相。