MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS
    3.
    发明申请
    MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS 有权
    包含三元金属元素的包含目标

    公开(公告)号:US20140102880A1

    公开(公告)日:2014-04-17

    申请号:US13856617

    申请日:2013-04-04

    申请人: H.C. STARCK, INC.

    IPC分类号: C23C14/34

    摘要: The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target while the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably is a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.5 to 45 atomic percent of a second metal element selected from the group consisting of niobium and vanadium; and 0.5 to 45 atomic percent of a third metal element selected from the group consisting of tantalum, chromium, vanadium, niobium, and titanium.

    摘要翻译: 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤:将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 当溅射靶位于真空室(例如,使用磁场和/或电场)时,从溅射靶的表面去除原子。 沉积层优选是包含约50原子%或更多的钼,0.5至45原子%的选自铌和钒的第二金属元素的含钼合金; 和0.5〜45原子%的选自钽,铬,钒,铌和钛的第三金属元素。

    MOLYBDENUM CONTAINING TARGETS
    5.
    发明申请

    公开(公告)号:US20180187297A1

    公开(公告)日:2018-07-05

    申请号:US15908896

    申请日:2018-03-01

    申请人: H.C. STARCK, INC.

    摘要: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

    MOLYBDENUM CONTAINING TARGETS
    7.
    发明申请

    公开(公告)号:US20210079512A1

    公开(公告)日:2021-03-18

    申请号:US17038325

    申请日:2020-09-30

    申请人: H.C. STARCK, INC.

    摘要: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.