公开(公告)号：US20180018113A1

公开(公告)日：2018-01-18

申请号：US15546041

申请日：2015-05-13

Applicant: Hitachi, Ltd.

Inventor： Hideyuki KOSEKI ,  Masahiro ARAI

IPC: G06F3/06

Abstract: A storage device relating to one aspect of the present invention has a storage controller and multiple memory devices. The memory devices manage capacity equivalent to the size of a memory space provided to the storage controller among regions of a non-volatile storage medium as logical capacity and manage the remaining regions as reserve capacity. When a device controller determines that a portion of the memory regions in the non-volatile storage medium is in an unusable state, the device controller notifies the storage controller of the size of the memory regions in the unusable state. On the basis of a policy set by the memory device, the storage controller determines the reduction amount of the logical capacity and the reserve capacity and notifies the memory device of the determined reduction amount of the logical capacity.

公开(公告)号：US20160306557A1

公开(公告)日：2016-10-20

申请号：US15192066

申请日：2016-06-24

Applicant: Hitachi, Ltd.

Inventor： Hideyuki KOSEKI ,  Junji OGAWA

IPC: G06F3/06

CPC classification number: G06F3/0605 ,  G06F3/0608 ,  G06F3/0616 ,  G06F3/0647 ,  G06F3/0659 ,  G06F3/0665 ,  G06F3/067 ,  G06F3/0688

Abstract: A storage apparatus is provided with a plurality of nonvolatile semiconductor storage media and a storage controller that is a controller that is coupled to the plurality of semiconductor storage media. The storage controller identifies a first semiconductor storage unit that is at least one semiconductor storage media and a second semiconductor storage unit that is at least one semiconductor storage media and that is provided with a remaining length of life shorter than that of the first semiconductor storage unit based on the remaining life length information that has been acquired. The storage controller moreover identifies a first logical storage region for the first semiconductor storage unit and a second logical storage region that is provided with a write load higher than that of the first logical storage region for the second semiconductor storage unit based on the statistics information that indicates the statistics that is related to a write for every logical storage region. The storage controller reads data from the first logical storage region and the second logical storage region, and writes data that has been read from the first logical storage region to the second logical storage region and/or writes data that has been read from the second logical storage region to the first logical storage region.

公开(公告)号：US20160011938A1

公开(公告)日：2016-01-14

申请号：US14762841

申请日：2013-08-30

Applicant: HITACHI, LTD.

Inventor： Hideyuki KOSEKI ,  Takashi TSUNEHIRO ,  Junji OGAWA ,  Nagamasa MIZUSHIMA ,  Atsushi KAWAMURA

IPC: G06F11/10 ,  G11C29/52 ,  G06F3/06

CPC classification number: G06F11/1068 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0679 ,  G06F11/1076 ,  G06F12/0246 ,  G06F12/04 ,  G06F12/16 ,  G06F2211/1014 ,  G06F2212/214 ,  G06F2212/403 ,  G06F2212/7202 ,  G06F2212/7208 ,  G11C29/52

Abstract: In a storage apparatus including a storage medium including a plurality of pages as a unit of reading and writing data, a first data block including a data block received from a higher-level device is generated, a second data block of a predetermined size including one or more undivided first data blocks is generated, a third data block in which a correction code is added to the second data block is generated, the third data block is stored in a page buffer, and one or more of the third data blocks stored in the page buffer is written in a page, which is a write destination, out of the pages of the storage medium.

Abstract translation: 在包括作为读取和写入数据的单元的多个页面的存储介质的存储装置中，生成包括从上级装置接收的数据块的第一数据块，包括一个预定尺寸的第二数据块，包括一个 或更多未分割的第一数据块，则生成校正码被添加到第二数据块的第三数据块，第三数据块被存储在页缓冲器中，并且存储在第三数据块中的一个或多个 页面缓冲器被写入存储介质的页面中的作为写入目的地的页面中。

公开(公告)号：US20130151762A1

公开(公告)日：2013-06-13

申请号：US13760144

申请日：2013-02-06

Applicant: HITACHI, LTD.

Inventor： Hideyuki KOSEKI

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F3/061 ,  G06F3/0644 ,  G06F3/0688

Abstract: The present invention aims to improve the performance of accessing flash memory used as a storage medium in a storage device. In the storage device in accordance with the present invention, a storage controller, before accessing the flash memory, queries a flash controller as to whether the flash memory is accessible.

Abstract translation: 本发明旨在提高访问用作存储设备中的存储介质的闪速存储器的性能。 在根据本发明的存储装置中，存储控制器在访问闪速存储器之前向闪存控制器询问闪存是否可访问。