摘要:
An asymmetrical pulse width modulated resonant DC--DC converter exhibiting improved zero voltage switching characteristics is disclosed. The converter includes a chopper circuit to convert the DC input voltage to a high frequency AC voltage which, in turn, is fed to a high frequency transformer whose secondary AC is rectified and filtered to produce a stable DC output. A compensation network is placed between the input and the chopper circuit which provides zero voltage switching of the converter over a wide input voltage range.
摘要:
Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.
摘要:
Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.
摘要:
A single-phase four-level inverter circuit topology and a three-phase four-level inverter circuit topology. The single-phase four-level inverter circuit topology is adapted to be used with two series-connected direct current power sources, so as to enable a first direct current power source or a second direct current power source to supply power to a load of the four-level inverter circuit topology, alternatively, any one of two direct current power sources is first algebraically superimposed with a flying capacitor and then supplies the power to the load of the four-level inverter circuit topology (M), thereby making the four-level inverter circuit topology output four different levels. The single-phase and three-phase four-level inverter circuit topologies reduce the system cost and volume by using a flying capacitor, the voltage utilization rate is three times that of the existing four-level inverter circuit topology under the same operating conditions, and the direct current side neutral point voltage can be balanced without requiring additional circuits.
摘要:
A single phase five-level inverter topology comprising a half-bridge inverter circuit with a floating capacitor which outputs five mutually different voltage levels including zero, wherein both the system cost and the size is reduced, the leakage current is eliminated substantially and high efficiency is achieved by using five-level half-bridge structure with only one AC filtering inductor. A three-phase five-level inverter topology wherein the voltage utilization is twice that of the present three-phase five-level half-bridge inverter under the same operating conditions; the AC filtering inductance is smaller than that of the three-level half-bridge inverter; the DC link mid-point voltage can be balanced without additional circuitry.
摘要:
A five-voltage level inverter topology circuit and a three-phase five-voltage level inverter topology circuit, suitable for use with two series-connected direct current (DC) power sources, include a half-bridge inverter circuit having a first circuit module and a second circuit module. The half-bridge inverter circuit outputs five voltage levels including a 0V level. The five-voltage level inverter topology circuit has a five-voltage level half-bridge structure, and only requires an alternating current (AC) filtering inductor, thereby reducing system cost and size, removing leakage current, and providing high efficiency.
摘要:
A hybrid rectifier that works as either a hybrid full bridge or a voltage doubler. Under 220 V AC input condition, the hybrid rectifier operates in full bridge mode, while at 110 V AC input, it operates as voltage doubler rectifier. The hybrid rectifier may be used with a DC-DC converter, such as an LLC resonant converter, in a power supply. With this mode switching, the LLC converter resonant tank design only takes consideration of 220 V AC input case, such that the required operational input voltage range is reduced, and the efficiency of the LLC converter is optimized. Both the size and power loss are reduced by using a single stage structure instead of the conventional two-stage configuration.
摘要:
Disclosed is single phase five-level inverter topology comprising a half-bridge inverter circuit with a floating capacitor which outputs five mutually different voltage levels including zero, wherein both the system cost and the size is reduced, the leakage current is eliminated substantially and high efficiency is achieved by using five-level half-bridge structure with only one AC filtering inductor. Provided also is three-phase five-level inverter topology wherein the voltage utilization is twice that of the present three-phase five-level half-bridge inverter under the same operating conditions; the AC filtering inductance is smaller than that of the three-level half-bridge inverter; the DC link mid-point voltage can be balanced without additional circuitry.
摘要:
Hybrid modulation strategies are provided for single phase and three phase inverter topologies. According to hybrid modulation strategy embodiments, one line frequency period is divided into two operation modes based on the polarities of output voltage and output current. When polarities of the output voltage and output current are the same, a nominal voltage level modulation is used to generate the output voltage. When polarities of the output voltage and output current are opposite, a lower voltage level modulation is used to generate the output voltage. In one embodiment, a nominal voltage level modulation is five voltage level modulation, and a lower voltage level modulation is three or two voltage level modulation. Embodiments allow inverters to be constructed with fewer switches, and improve performance of multilevel inverters. The hybrid modulation strategies may be implemented in multilevel inverters such as active neutral point clamped (ANPC) and neutral point clamped (NPC) inverters.
摘要:
Provided is a current-source gate driver for use with a switching device having a gate capacitance, including an input terminal for receiving a DC voltage; a first switch connected between the input terminal and an output terminal; a second switch connected between the output terminal and a circuit common; a series circuit comprising a first capacitor and an inductor, the series circuit connected between the input terminal and the output terminal; wherein the gate capacitance of the switching device is connected between the output terminal and the circuit common. The current-source gate driver improves efficiency of the power switching devices of a voltage regulator module or other switching converter.