Asymmetrical pulse width modulated resonant DC-DC converter with
compensating circuitry
    21.
    发明授权
    Asymmetrical pulse width modulated resonant DC-DC converter with compensating circuitry 失效
    具补偿电路的非对称脉宽调制谐振DC-DC转换器

    公开(公告)号:US6097614A

    公开(公告)日:2000-08-01

    申请号:US312306

    申请日:1999-05-14

    IPC分类号: H02M3/337 H02M3/335

    CPC分类号: H02M3/337 Y02B70/1433

    摘要: An asymmetrical pulse width modulated resonant DC--DC converter exhibiting improved zero voltage switching characteristics is disclosed. The converter includes a chopper circuit to convert the DC input voltage to a high frequency AC voltage which, in turn, is fed to a high frequency transformer whose secondary AC is rectified and filtered to produce a stable DC output. A compensation network is placed between the input and the chopper circuit which provides zero voltage switching of the converter over a wide input voltage range.

    摘要翻译: 公开了一种表现出改进的零电压开关特性的非对称脉宽调制谐振DC-DC转换器。 该转换器包括将DC输入电压转换成高频交流电压的斩波电路,该高频交流电压进而被馈送到二次交流整流和滤波以产生稳定的直流输出的高频变压器。 在输入和斩波电路之间放置补偿网络,该电路在宽输入电压范围内提供转换器的零电压开关。

    Gate Drivers and Voltage Regulators for Gallium Nitride Devices and Integrated Circuits

    公开(公告)号:US20200007119A1

    公开(公告)日:2020-01-02

    申请号:US16454078

    申请日:2019-06-27

    摘要: Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.

    Single-phase four-level inverter circuit topology and three-phase four-level inverter circuit topology

    公开(公告)号:US10389271B2

    公开(公告)日:2019-08-20

    申请号:US15768552

    申请日:2016-11-07

    IPC分类号: H02M7/483 H02M7/487

    摘要: A single-phase four-level inverter circuit topology and a three-phase four-level inverter circuit topology. The single-phase four-level inverter circuit topology is adapted to be used with two series-connected direct current power sources, so as to enable a first direct current power source or a second direct current power source to supply power to a load of the four-level inverter circuit topology, alternatively, any one of two direct current power sources is first algebraically superimposed with a flying capacitor and then supplies the power to the load of the four-level inverter circuit topology (M), thereby making the four-level inverter circuit topology output four different levels. The single-phase and three-phase four-level inverter circuit topologies reduce the system cost and volume by using a flying capacitor, the voltage utilization rate is three times that of the existing four-level inverter circuit topology under the same operating conditions, and the direct current side neutral point voltage can be balanced without requiring additional circuits.

    Five-level half bridge inverter topology with high voltage utilization ratio

    公开(公告)号:US10312825B2

    公开(公告)日:2019-06-04

    申请号:US15751329

    申请日:2016-08-15

    摘要: A single phase five-level inverter topology comprising a half-bridge inverter circuit with a floating capacitor which outputs five mutually different voltage levels including zero, wherein both the system cost and the size is reduced, the leakage current is eliminated substantially and high efficiency is achieved by using five-level half-bridge structure with only one AC filtering inductor. A three-phase five-level inverter topology wherein the voltage utilization is twice that of the present three-phase five-level half-bridge inverter under the same operating conditions; the AC filtering inductance is smaller than that of the three-level half-bridge inverter; the DC link mid-point voltage can be balanced without additional circuitry.

    Five-level inverter topology with high voltage utilization ratio

    公开(公告)号:US10250159B2

    公开(公告)日:2019-04-02

    申请号:US15767721

    申请日:2016-11-07

    摘要: A five-voltage level inverter topology circuit and a three-phase five-voltage level inverter topology circuit, suitable for use with two series-connected direct current (DC) power sources, include a half-bridge inverter circuit having a first circuit module and a second circuit module. The half-bridge inverter circuit outputs five voltage levels including a 0V level. The five-voltage level inverter topology circuit has a five-voltage level half-bridge structure, and only requires an alternating current (AC) filtering inductor, thereby reducing system cost and size, removing leakage current, and providing high efficiency.

    Five-Level Half Bridge Inverter Topology with High Voltage Utilization Ratio

    公开(公告)号:US20180241320A1

    公开(公告)日:2018-08-23

    申请号:US15751329

    申请日:2016-08-15

    摘要: Disclosed is single phase five-level inverter topology comprising a half-bridge inverter circuit with a floating capacitor which outputs five mutually different voltage levels including zero, wherein both the system cost and the size is reduced, the leakage current is eliminated substantially and high efficiency is achieved by using five-level half-bridge structure with only one AC filtering inductor. Provided also is three-phase five-level inverter topology wherein the voltage utilization is twice that of the present three-phase five-level half-bridge inverter under the same operating conditions; the AC filtering inductance is smaller than that of the three-level half-bridge inverter; the DC link mid-point voltage can be balanced without additional circuitry.

    Hybrid Modulation Strategy for Multilevel Inverters

    公开(公告)号:US20180062537A1

    公开(公告)日:2018-03-01

    申请号:US15662044

    申请日:2017-07-27

    IPC分类号: H02M7/487 H02M1/08

    摘要: Hybrid modulation strategies are provided for single phase and three phase inverter topologies. According to hybrid modulation strategy embodiments, one line frequency period is divided into two operation modes based on the polarities of output voltage and output current. When polarities of the output voltage and output current are the same, a nominal voltage level modulation is used to generate the output voltage. When polarities of the output voltage and output current are opposite, a lower voltage level modulation is used to generate the output voltage. In one embodiment, a nominal voltage level modulation is five voltage level modulation, and a lower voltage level modulation is three or two voltage level modulation. Embodiments allow inverters to be constructed with fewer switches, and improve performance of multilevel inverters. The hybrid modulation strategies may be implemented in multilevel inverters such as active neutral point clamped (ANPC) and neutral point clamped (NPC) inverters.

    Current-source gate driver
    30.
    发明授权
    Current-source gate driver 有权
    电流源驱动器

    公开(公告)号:US08085083B2

    公开(公告)日:2011-12-27

    申请号:US12379481

    申请日:2009-02-23

    IPC分类号: H03K17/687

    CPC分类号: H03K17/145 H03K2217/0036

    摘要: Provided is a current-source gate driver for use with a switching device having a gate capacitance, including an input terminal for receiving a DC voltage; a first switch connected between the input terminal and an output terminal; a second switch connected between the output terminal and a circuit common; a series circuit comprising a first capacitor and an inductor, the series circuit connected between the input terminal and the output terminal; wherein the gate capacitance of the switching device is connected between the output terminal and the circuit common. The current-source gate driver improves efficiency of the power switching devices of a voltage regulator module or other switching converter.

    摘要翻译: 提供了一种与具有栅极电容的开关器件一起使用的电流源栅极驱动器,包括用于接收DC电压的输入端子; 连接在输入端和输出端之间的第一开关; 连接在输出端和电路之间的第二开关; 串联电路,包括第一电容器和电感器,串联电路连接在输入端子和输出端子之间; 其中开关器件的栅极电容连接在输出端子和电路公共端之间。 电流源栅极驱动器提高了电压调节器模块或其他开关转换器的功率开关器件的效率。