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公开(公告)号：US10855273B2
公开(公告)日：2020-12-01
申请号：US16423138
申请日：2019-05-27
申请人： Zhanming Li , Yan-Fei Liu , Yue Fu , Wai Tung Ng
发明人： Zhanming Li , Yan-Fei Liu , Yue Fu , Wai Tung Ng
摘要： A gate driver circuit for a gallium nitride (GaN) power transistor includes a RS-flipflop that receives a first pulse train at an S input terminal and a second pulse train at an R input terminal, and produces an output pulse train, and an amplifier that amplifies the output pulse train and produces a gate driver signal for the GaN power transistor. The RS-flipflop and the amplifier may be implemented together on a GaN monolithic integrated circuit, optionally together with the GaN power transistor. The GaN power transistor may be a high-side switch of a half-bridge circuit. The RS-flipflop may be implemented with enhancement mode and depletion mode GaN high electron mobility transistors (HEMTs). Embodiments avoid drawbacks of prior hybrid (e.g., silicon-GaN) approaches, such as parasitic inductances from bonding wires and on-board metal traces, especially at high operating frequencies, as well as reduce implementation cost and improve performance.
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公开(公告)号：US10686411B2
公开(公告)日：2020-06-16
申请号：US16449356
申请日：2019-06-22
申请人： Zhanming Li , Yue Fu , Yan-Fei Liu
发明人： Zhanming Li , Yue Fu , Yan-Fei Liu
IPC分类号： H03F1/30 , H03F1/52 , H01L29/20 , H01L27/02 , H01L27/06 , H01L29/778 , H03F3/213 , H01L21/8252
摘要： Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.
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公开(公告)号：US10388743B2
公开(公告)日：2019-08-20
申请号：US15783888
申请日：2017-10-13
申请人： Zhanming Li , Yue Fu , Wai Tung Ng , Yan-Fei Liu
发明人： Zhanming Li , Yue Fu , Wai Tung Ng , Yan-Fei Liu
IPC分类号： H01L29/417 , H01L29/40 , H01L29/778 , H01L31/0224 , H01L33/38 , H01L31/108 , H01L33/20
摘要： This invention relates to interdigitated electrodes for power electronic and optoelectronic devices where field and current distribution determine the device performance. Described are geometries based on rounded asymmetrical fingers and electrode bases of varying width. Simulations demonstrate benefits for reducing self-heating and thermal power loss, which reduces overall on-state resistance and increases reverse break down voltages.
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公开(公告)号：US20190246499A1
公开(公告)日：2019-08-08
申请号：US16254296
申请日：2019-01-22
申请人： Zhanming Li , Yan-Fei Liu , Yue Fu , Wai Tung Ng
发明人： Zhanming Li , Yan-Fei Liu , Yue Fu , Wai Tung Ng
CPC分类号： H05K1/181 , H01L23/3171 , H01L23/34 , H01L29/2003 , H01L29/778 , H05K1/0203 , H05K1/111 , H05K2201/10166 , H05K2201/10719 , H05K2201/10734
摘要： A packaged GaN semiconductor device with improved heat dissipation is provided. A GaN device is packaged on a printed circuit board (PCB) with a vertical side of the device, and optionally the back side of the device, in thermal contact with the PCB. The packaging is compatible with surface mount technologies such as land grid array (LGA), ball grid array (BGA), and other formats. Thermal contact between the PCB and a vertical side of the device, and optionally the back side of the device, is made through solder. The solder used for the thermal contact may also connect a source terminal of the device, which also improves electrical stability of the device. The packaging is particularly suitable for GaN HEMT devices.
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公开(公告)号：US10135359B2
公开(公告)日：2018-11-20
申请号：US15962102
申请日：2018-04-25
申请人： Yang Chen , Hongliang Wang , Yan-Fei Liu , Zhanming Li , Yue Fu
发明人： Yang Chen , Hongliang Wang , Yan-Fei Liu , Zhanming Li , Yue Fu
摘要： A hybrid rectifier that works as either a hybrid full bridge or a voltage doubler. Under 220 V AC input condition, the hybrid rectifier operates in full bridge mode, while at 110 V AC input, it operates as voltage doubler rectifier. The hybrid rectifier may be used with a DC-DC converter, such as an LLC resonant converter, in a power supply. With this mode switching, the LLC converter resonant tank design only takes consideration of 220 V AC input case, such that the required operational input voltage range is reduced, and the efficiency of the LLC converter is optimized. Both the size and power loss are reduced by using a single stage structure instead of the conventional two-stage configuration.
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公开(公告)号：US20180247879A1
公开(公告)日：2018-08-30
申请号：US15960508
申请日：2018-04-23
申请人： Zhanming Li , Yue Fu , Wai Tung Ng , Yan-Fei Liu
发明人： Zhanming Li , Yue Fu , Wai Tung Ng , Yan-Fei Liu
IPC分类号： H01L23/367 , H01L29/06 , H01L29/20 , H01L23/00 , H01L25/18 , H01L25/07 , H01L23/538 , H01L23/498 , H01L29/417
摘要： Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.
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