公开(公告)号：US20090240362A1

公开(公告)日：2009-09-24

申请号：US12406828

申请日：2009-03-18

申请人： Shoji Mimotogi ,  Masafumi Asano

发明人： Shoji Mimotogi ,  Masafumi Asano

IPC分类号： G06F17/50 ,  G06F17/10

CPC分类号： G03F7/70641 ,  G03F1/36 ,  G03F1/68

摘要： A simulation model creating method computes, for measurement results of a line width of a resist pattern formed with varied an exposure amount and focus value, a permissible fluctuation range of the pattern line width from a distribution of the exposure amount and a distribution of the focus value; computes difference values between the measurement results and corresponding approximation values on a fitting function which has the exposure amount and focus value as parameters; compares the difference values with the permissible fluctuation range; deletes any measurement values for which the difference value is larger than the permissible fluctuation range, and recomputes the fitting function accordingly; and deletes measurement values outside a permissible fluctuation range of a pattern line width of the mask, and creates a simulation model.

摘要翻译： 仿真模型创建方法针对由曝光量和聚焦值变化形成的抗蚀剂图案的线宽的测量结果，计算曝光量的分布和焦点分布的图案线宽度的容许波动范围 值; 在具有曝光量和聚焦值作为参数的拟合函数上计算测量结果与相应近似值之间的差值; 将差值与允许的波动范围进行比较; 删除差值大于允许波动范围的任何测量值，并相应地重新计算拟合功能; 并将测量值删除在掩模的图案线宽度的允许波动范围之外，并创建仿真模型。

公开(公告)号：US20080004852A1

公开(公告)日：2008-01-03

申请号：US11806174

申请日：2007-05-30

申请人： Masaki Satake ,  Shoji Mimotogi

发明人： Masaki Satake ,  Shoji Mimotogi

IPC分类号： G06F17/50

CPC分类号： G03F7/70625 ,  G03F7/705 ,  G03F7/70516

摘要： A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.

摘要翻译： 一种创建仿真模型的方法，包括获取基于测试图案实际形成的光致抗蚀剂图案的CD值，获取关于光致抗蚀剂图案的形状的信息，基于测试图案获取光学图像的强度分布，通过执行 模拟，获取根据对应于光致抗蚀剂图案的CD值的强度分布上的CD值定义的经验阈值，基于光学图像的强度分布获取光学图像的参数，获取第一相关性 关于光致抗蚀剂图案的形状和光学图像的参数的信息，获取关于光致抗蚀剂图案的形状的信息与经验阈值之间的第二相关性，以及获取光学图像的参数和 经验阈值通过使用第一和第二相关。

公开(公告)号：US20070234269A1

公开(公告)日：2007-10-04

申请号：US11730102

申请日：2007-03-29

申请人： Satoshi Tanaka ,  Shoji Mimotogi ,  Takashi Sato ,  Soichi Inoue

发明人： Satoshi Tanaka ,  Shoji Mimotogi ,  Takashi Sato ,  Soichi Inoue

IPC分类号： G06F17/50

CPC分类号： G06F17/5009

摘要： A light intensity distribution simulation method for predicting an intensity distribution of light on a substrate when photomask including a pattern is irradiated with light in which a shape distribution of an effective light source is defined includes extracting plural point light sources from a shape distribution of the effective light source, entering the light emitted from each of the plural point light sources onto the pattern of the photomask, calculating an effective shape for each of the plural point light sources, the effective shape being a pattern obtained by excluding a part which is not irradiated with the light directly due to a sidewall of a pattern film including the pattern from a design shape of an aperture of the pattern, and calculating a distribution of diffraction light generated in the pattern for each of the plural point light sources by using the effective shape.

摘要翻译： 一种光强度分布模拟方法，用于当定义包含图案的光掩模在基板上的光的强度分布时，其中所述光被定义为其中限定有效光源的形状分布的光包括从有效光源的形状分布中提取多个点光源 光源，将从多个点光源中的每一个发射的光输入到光掩模的图案上，计算多个点光源中的每一个的有效形状，有效形状是通过排除未照射的部分获得的图案 直接由于来自图案的孔的设计形状的图案的图案膜的侧壁而直接导光，并且通过使用有效形状来计算针对每个多个点光源的图案中产生的衍射光的分布 。

公开(公告)号：US20070019058A1

公开(公告)日：2007-01-25

申请号：US11485554

申请日：2006-07-13

申请人： Toshiya Kotani ,  Shigeki Nojima ,  Shoji Mimotogi

发明人： Toshiya Kotani ,  Shigeki Nojima ,  Shoji Mimotogi

IPC分类号： B41J2/385

CPC分类号： G03F7/70433 ,  G03F7/705

摘要： A lithography simulation method includes: taking in design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of an energy ray; obtaining the latent image of the pattern by calculation of an intensity of the energy ray; locally changing, at least in a portion corresponding to a pattern to be interested, a relative position in a direction of the intensity of the energy ray between a latent image curve and a reference intensity line in accordance with a distance between the pattern to be interested and a pattern of a neighboring region, the latent image curve being an intensity distribution curve of the energy ray constituting the latent image, the reference intensity line being defined to specify a position of an edge of the pattern to be interested; and calculating a distance between intersections of a portion of the latent image curve corresponding to the pattern to be interested and the reference intensity line in the changed relative position to define an interested line width of the pattern to be interested.

摘要翻译： 光刻模拟方法包括：获取要在基板上形成的图案的设计数据，并且掩模数据，以通过透射能量线来制备用于在基板上形成图案的潜像所使用的掩模图案; 通过计算能量射线的强度来获得图案的潜像; 至少在与感兴趣的图案对应的部分中，根据感兴趣的图案之间的距离，在潜像图像曲线和参考强度线之间的能量射线的强度的方向上的相对位置 以及相邻区域的图案，所述潜像曲线是构成所述潜像的能量射线的强度分布曲线，所述基准强度线被定义为指定所述图案的边缘的位置; 以及计算与感兴趣的图案对应的潜在图像曲线的一部分的交点与变化的相对位置中的基准强度线之间的距离，以定义感兴趣的图案的感兴趣的线宽。

公开(公告)号：US20060073425A1

公开(公告)日：2006-04-06

申请号：US11282473

申请日：2005-11-21

申请人： Maki Miyazaki ,  Shoji Mimotogi

发明人： Maki Miyazaki ,  Shoji Mimotogi

IPC分类号： G03F7/00 ,  G03F9/00

CPC分类号： H01L21/0274 ,  G03F7/40

摘要： There is disclosed a method of designing a pattern comprising: preparing a first design pattern containing a first hole pattern, obtaining a distance between the first hole pattern and a pattern adjacent to the first hole pattern, obtaining an enlarged amount of the first hole pattern based on the distance and a reduction amount of a hole pattern formed in a photoresist film when the photoresist film is heated, and generating a second design pattern containing a second hole pattern which are obtained by enlarging the first hole pattern by the enlarged amount.

摘要翻译： 公开了一种设计图案的方法，包括：制备包含第一孔图案的第一设计图案，获得第一孔图案和与第一孔图案相邻的图案之间的距离，获得基于第一孔图案的第一孔图案的扩大量 在光致抗蚀剂膜被加热时，形成在光致抗蚀剂膜中的孔图案的距离和减少量，并且产生包含通过以扩大的量放大第一孔图案而获得的第二孔图案的第二设计图案。

公开(公告)号：US20050183056A1

公开(公告)日：2005-08-18

申请号：US11045296

申请日：2005-01-31

申请人： Shoji Mimotogi ,  Daisuke Kawamura ,  Akiko Yamada

发明人： Shoji Mimotogi ,  Daisuke Kawamura ,  Akiko Yamada

IPC分类号： G03F7/20 ,  G03C5/00 ,  G03F9/00 ,  G06F17/50 ,  H01L21/027

CPC分类号： G06F17/5009 ,  G03F7/70625

摘要： A simulator of a lithography tool includes a correcting parameter memory storing a correcting scaling value to correct a focus error of a projection optical system in the lithography tool and a correcting bias to correct a critical dimension error gene rated in the lithography tool. A model simulation engine simulates an image formation under a corrected focus calculated by multiplying a defocus of the projection optical system by the correcting scaling value to model a calculated critical dimension of an image. A bias corrector adds the correcting bias to the calculated critical dimension to correct the image.

摘要翻译： 光刻工具的模拟器包括校正参数存储器，其存储校正缩放值以校正光刻工具中的投影光学系统的聚焦误差，以及校正偏差以校正光刻工具中评估的关键尺寸误差基因。 模型仿真引擎模拟在通过将投影光学系统的散焦乘以校正缩放值计算的校正焦点下的图像形成，以对图像的计算临界尺寸进行建模。 偏置校正器将校正偏差添加到计算的临界尺寸以校正图像。

公开(公告)号：US20050058914A1

公开(公告)日：2005-03-17

申请号：US10912228

申请日：2004-08-06

申请人： Maki Miyazaki ,  Shoji Mimotogi

发明人： Maki Miyazaki ,  Shoji Mimotogi

IPC分类号： G03F1/30 ,  G03F1/68 ,  G03F7/00 ,  G03F7/20 ,  G03F7/40 ,  G03F9/00 ,  H01L21/00 ,  H01L21/027

CPC分类号： H01L21/0274 ,  G03F7/40

摘要： There is disclosed a method of designing a pattern comprising: preparing a first design pattern containing a first hole pattern, obtaining a distance between the first hole pattern and a pattern adjacent to the first hole pattern, obtaining an enlarged amount of the first hole pattern based on the distance and a reduction amount of a hole pattern formed in a photoresist film when the photoresist film is heated, and generating a second design pattern containing a second hole pattern which are obtained by enlarging the first hole pattern by the enlarged amount.

摘要翻译： 公开了一种设计图案的方法，包括：制备包含第一孔图案的第一设计图案，获得第一孔图案和与第一孔图案相邻的图案之间的距离，获得基于第一孔图案的第一孔图案的扩大量 在光致抗蚀剂膜被加热时，形成在光致抗蚀剂膜中的孔图案的距离和减少量，并且产生包含通过以扩大的量放大第一孔图案而获得的第二孔图案的第二设计图案。

公开(公告)号：US06632592B1

公开(公告)日：2003-10-14

申请号：US09657049

申请日：2000-09-07

申请人： Shoji Mimotogi

发明人： Shoji Mimotogi

IPC分类号： G03F700

CPC分类号： G03F1/32 ,  G03F1/70 ,  G03F7/70466 ,  G03F7/70475

摘要： A resist pattern forming method of forming a pattern on a resist film formed on a wafer by using a projection exposure apparatus generates a resized pattern of an active area and its inverted pattern, then generates a logical product pattern of a gate pattern to be exposed and the resized pattern, generates a first mask having a logical sum pattern of the inverted pattern and the logical product pattern as a light shielding film, generates a second mask having a logical sum pattern of the resized pattern and the gate pattern as a light shielding film, exposes the resist film on the wafer using the first mask under a condition that an numerical aperture of the projection exposure apparatus is small, and then exposes the resist film on the wafer using the second mask under a condition that the numerical aperture of the projection exposure apparatus is large.

摘要翻译： 通过使用投影曝光装置在形成在晶片上的抗蚀剂膜上形成图案的抗蚀剂图案形成方法产生有效区域及其反转图案的调整大小的图案，然后生成要暴露的栅极图案的逻辑积图案， 调整大小的图案，生成具有反转图案和逻辑积图案的逻辑和图案的第一掩模作为遮光膜，生成具有调整大小的图案和栅极图案的逻辑和图案的第二掩模作为遮光膜 在投影曝光装置的数值孔径小的条件下，使用第一掩模在晶片上曝光抗蚀剂膜，然后使用第二掩模将抗蚀剂膜暴露在晶片上，条件是投影的数值孔径 曝光装置很大。

公开(公告)号：US06225033B1

公开(公告)日：2001-05-01

申请号：US09413543

申请日：1999-10-06

申请人： Yasunobu Onishi ,  Kentaro Matsunaga ,  Shoji Mimotogi ,  Katsuya Okumura

发明人： Yasunobu Onishi ,  Kentaro Matsunaga ,  Shoji Mimotogi ,  Katsuya Okumura

IPC分类号： G03F730

CPC分类号： G03F7/38

摘要： An anti-reflection film has been formed on an SiO2 film on a silicon substrate formed on a silicon wafer. A chemical amplification positive resist is formed on the anti-reflection film. The resist is exposed to light. Vapor of strong alkali is applied to a surface of the chemical amplification positive resist. The entire resist is developed with a developing solution, thereby forming a resist pattern.

摘要翻译： 在形成在硅晶片上的硅衬底上的SiO 2膜上形成防反射膜。 在抗反射膜上形成化学放大正光刻胶。 抗蚀剂曝光。 强碱的蒸气被施加到化学放大正性抗蚀剂的表面。 整个抗蚀剂用显影液显影，从而形成抗蚀剂图案。

公开(公告)号：US5745388A

公开(公告)日：1998-04-28

申请号：US551803

申请日：1995-11-07

申请人： Shoji Mimotogi ,  Soichi Inoue

发明人： Shoji Mimotogi ,  Soichi Inoue

IPC分类号： G01B11/24 ,  G03F7/26 ,  G06F17/50 ,  G06F19/00 ,  G06T11/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

CPC分类号： G06F17/5018 ,  G06T11/203

摘要： A profile simulation method of predicting a profile of a surface of a film to be processed which changes when the surface of the film on a substrate is physically or chemically processed, is characterized by comprising the steps of setting a plurality of representative points on the surface of the film before a process, moving the plurality of representative points in a first direction perpendicular to the surface of the film on the substrate in accordance with processing velocities at the plurality of representative points, switching the moving direction of the representative points from the first direction to a second direction parallel to the surface of the film on the substrate, and moving the plurality of representative points in the second direction in accordance with processing velocities at the plurality of representative points, and setting all loci of the plurality of representative points, which have moved from the first direction to the second direction in a predetermined processing time, as paths, and obtaining a envelope or surface for all the paths as a profile after the process.

摘要翻译： 一种轮廓模拟方法，其特征在于包括以下步骤：在所述表面上设置多个代表点，所述轮廓模拟方法用于预测在基材上的所述膜的表面物理或化学处理时改变的被处理膜表面的轮廓， 在所述处理之前，根据所述多个代表点处的处理速度，在与所述基板上的所述膜的表面垂直的第一方向上移动所述多个代表点，将所述代表点的移动方向从所述第一 方向到平行于基板上的膜表面的第二方向，并且根据多个代表点处的处理速度在第二方向上移动多个代表点，并且设置多个代表点的所有轨迹， 它们以预定的p从第一方向移动到第二方向 处理时间作为路径，并且在所有过程之后获得用于所有路径的包络或表面作为简档。