Projection exposure method
    1.
    发明授权
    Projection exposure method 失效
    投影曝光法

    公开(公告)号:US08077292B2

    公开(公告)日:2011-12-13

    申请号:US12395513

    申请日:2009-02-27

    IPC分类号: G03B27/52

    CPC分类号: G03B27/42 G03B27/72

    摘要: A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.

    摘要翻译: 一种投影曝光方法,其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光,将衍射光投射到晶片上,其中 在基本上垂直于光轴的平面中,施加到掩模的光具有第一强度分布,其中在光轴中心的八边形的八个顶点附近的强度比在其他区域中的强度高,掩模具有 多个第一开口图案被布置成矩形格子构型,其具有平行于通过光轴的八边形的对角线的边,并且多个第二开口图案以面向中心的矩形格子构造布置,具有平行于 八角形通过光轴。

    Creating method of simulation model, manufacturing method of photo mask, manufacturing method of semiconductor device, and recording medium
    2.
    发明授权
    Creating method of simulation model, manufacturing method of photo mask, manufacturing method of semiconductor device, and recording medium 有权
    创建模拟模型的方法,光掩模的制造方法,半导体器件的制造方法和记录介质

    公开(公告)号:US07840390B2

    公开(公告)日:2010-11-23

    申请号:US11806174

    申请日:2007-05-30

    IPC分类号: G06F17/10

    摘要: A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.

    摘要翻译: 一种创建仿真模型的方法,包括获取基于测试图案实际形成的光致抗蚀剂图案的CD值,获取关于光致抗蚀剂图案的形状的信息,基于测试图案获取光学图像的强度分布,通过执行 模拟,获取根据对应于光致抗蚀剂图案的CD值的强度分布上的CD值定义的经验阈值,基于光学图像的强度分布获取光学图像的参数,获取第一相关性 关于光致抗蚀剂图案的形状和光学图像的参数的信息,获取关于光致抗蚀剂图案的形状的信息与经验阈值之间的第二相关性,以及获取光学图像的参数和 经验阈值通过使用第一和第二相关。

    PROJECTION EXPOSURE METHOD
    3.
    发明申请
    PROJECTION EXPOSURE METHOD 失效
    投影曝光方法

    公开(公告)号:US20090244504A1

    公开(公告)日:2009-10-01

    申请号:US12395513

    申请日:2009-02-27

    IPC分类号: G03B27/42 G03B27/72

    CPC分类号: G03B27/42 G03B27/72

    摘要: A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.

    摘要翻译: 一种投影曝光方法,其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光,将衍射光投射到晶片上,其中 在基本上垂直于光轴的平面中,施加到掩模的光具有第一强度分布,其中在光轴中心的八边形的八个顶点附近的强度比在其它区域中的强度高,掩模具有 多个第一开口图案被布置成矩形格子构型,其具有平行于通过光轴的八边形的对角线的边,并且多个第二开口图案以面向中心的矩形格子构造布置,具有平行于 八角形通过光轴。

    Creating method of simulation model, manufacturing method of photo mask, manufacturing method of semiconductor device, and recording medium
    4.
    发明申请
    Creating method of simulation model, manufacturing method of photo mask, manufacturing method of semiconductor device, and recording medium 有权
    创建模拟模型的方法,光掩模的制造方法,半导体器件的制造方法和记录介质

    公开(公告)号:US20080004852A1

    公开(公告)日:2008-01-03

    申请号:US11806174

    申请日:2007-05-30

    IPC分类号: G06F17/50

    摘要: A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.

    摘要翻译: 一种创建仿真模型的方法,包括获取基于测试图案实际形成的光致抗蚀剂图案的CD值,获取关于光致抗蚀剂图案的形状的信息,基于测试图案获取光学图像的强度分布,通过执行 模拟,获取根据对应于光致抗蚀剂图案的CD值的强度分布上的CD值定义的经验阈值,基于光学图像的强度分布获取光学图像的参数,获取第一相关性 关于光致抗蚀剂图案的形状和光学图像的参数的信息,获取关于光致抗蚀剂图案的形状的信息与经验阈值之间的第二相关性,以及获取光学图像的参数和 经验阈值通过使用第一和第二相关。

    LITHOGRAPHY SIMULATION METHOD, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND PROGRAM
    5.
    发明申请
    LITHOGRAPHY SIMULATION METHOD, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND PROGRAM 有权
    LITHOGRAPHY模拟方法,制造半导体器件和程序的方法

    公开(公告)号:US20080220376A1

    公开(公告)日:2008-09-11

    申请号:US12042879

    申请日:2008-03-05

    申请人: Masaki Satake

    发明人: Masaki Satake

    IPC分类号: G03F7/00 G06K9/00

    CPC分类号: G03F7/70675 G03F7/705

    摘要: A lithography simulation method of obtaining a resist image by simulation using first and second functions, obtaining the resist image by the simulation includes determining a mask transmission function from a mask layout, modulating the mask transmission function using the first function to determine a modulated mask transmission function, obtaining an optical image of the mask layout using the modulated mask transmission function, and applying the second function to the optical image to obtain the resist image of the mask layout.

    摘要翻译: 通过使用第一和第二功能的模拟获得抗蚀剂图像的光刻模拟方法,通过模拟获得抗蚀剂图像包括从掩模布局确定掩模传输功能,使用第一功能调制掩模传输功能以确定调制的掩模传输 使用调制掩模传输功能获得掩模布局的光学图像,并将第二功能应用于光学图像以获得掩模布局的抗蚀剂图像。

    Simulation model making method
    6.
    发明申请
    Simulation model making method 审中-公开
    仿真模型制作方法

    公开(公告)号:US20080134131A1

    公开(公告)日:2008-06-05

    申请号:US11976025

    申请日:2007-10-19

    IPC分类号: G06F17/50

    摘要: A method of making a simulation model, includes specifying a feature factor which characterizes a pattern layout of a mask pattern, specifying a control factor which affects a dimension of a resist pattern to be formed on a substrate by means of a lithography process using the mask pattern, determining a predicted dimension of the resist pattern to be formed on the substrate by means of the lithography process using the mask pattern through the use of a model based on the feature and control factors, obtaining an actual dimension of the resist pattern actually formed on the substrate by means of the lithography process using the mask pattern, and setting the feature and control factors and the predicted dimension as input layers and setting the actual dimension as an output layer to construct a neural network.

    摘要翻译: 一种制作仿真模型的方法包括指定表征掩模图案的图案布局的特征因子,通过使用掩模的光刻工艺指定影响待形成在抗蚀剂图案的尺寸的控制因素 通过使用基于特征和控制因子的模型通过使用掩模图案的光刻处理来确定要在基板上形成的抗蚀剂图案的预测尺寸,获得实际形成的抗蚀剂图案的实际尺寸 通过使用掩模图案的光刻工艺在衬底上,并将特征和控制因子和预测尺寸设置为输入层,并将实际尺寸设置为输出层以构建神经网络。

    Magnetic recording medium having a lower layer containing a specified
polyurethane binder
    7.
    发明授权
    Magnetic recording medium having a lower layer containing a specified polyurethane binder 失效
    具有含有特定聚氨酯粘合剂的下层的磁记录介质

    公开(公告)号:US5908691A

    公开(公告)日:1999-06-01

    申请号:US772575

    申请日:1996-12-26

    摘要: The present invention provides a magnetic recording medium having high durability and excellent electromagnetic transfer characteristics and having a lower coating layer, which contains a binder and has high dispersion property and durability. The magnetic recording medium comprises a lower coating layer where non-magnetic powder or ferromagnetic power is dispersed in a binder and an upper magnetic layer where ferromagnetic powder is dispersed in a binder, said two layers being placed on a non-magnetic support member, whereby the binder of the lower coating layer comprises polyurethane resin, which is a reaction product using diol and organic diisocyanate as major materials, the polyurethane resin contains short-chain diol having cyclic structure by 17 to 40 weight %, and the polyurethane resin contains long-chain diol, containing ether groups by 1.0 to 5.0 mmol/g to the entire polyurethane resin, by 10 to 50 weight %.

    摘要翻译: 本发明提供一种具有高耐久性和优异的电磁传递特性的磁记录介质,并具有包含粘合剂并具有高分散性和耐久性的下涂层。 磁记录介质包括其中非磁性粉末或铁磁力分散在粘合剂中的下涂层和将铁磁性粉末分散在粘合剂中的上磁性层,所述两层位于非磁性支撑构件上,由此 下涂层的粘合剂包含聚氨酯树脂,其是使用二醇和有机二异氰酸酯作为主要材料的反应产物,所述聚氨酯树脂包含具有17至40重量%的环状结构的短链二醇,并且所述聚氨酯树脂包含长链, 链状二醇,含有醚基团,1.0〜5.0mmol / g,相对于整个聚氨酯树脂,为10〜50重量%。

    Silver halide photographic material
    8.
    发明授权
    Silver halide photographic material 失效
    卤化银照相材料

    公开(公告)号:US4996130A

    公开(公告)日:1991-02-26

    申请号:US492212

    申请日:1990-03-13

    IPC分类号: G03C1/053 G03C1/06

    CPC分类号: G03C1/053 G03C1/061

    摘要: A negative type silver halide photographic material is disclosed, which comprises a support having thereon at least one silver halide emulsion layer and at least one other hydrophilic colloidal layer, wherein at least one said silver halide emulsion layer or at least one said other hydrophilic colloidal layer contains a hydrazine derivative and a polyacrylamide derivative.

    摘要翻译: 公开了一种负型卤化银照相材料,其包括其上具有至少一个卤化银乳剂层和至少一种其它亲水胶体层的载体,其中至少一种所述卤化银乳剂层或至少一种所述其它亲水胶体层 含有肼衍生物和聚丙烯酰胺衍生物。

    Lithography simulation method, method of manufacturing a semiconductor device and program
    9.
    发明授权
    Lithography simulation method, method of manufacturing a semiconductor device and program 有权
    平版印刷模拟方法,制造半导体器件和程序的方法

    公开(公告)号:US07870532B2

    公开(公告)日:2011-01-11

    申请号:US12042879

    申请日:2008-03-05

    申请人: Masaki Satake

    发明人: Masaki Satake

    IPC分类号: G06F17/50

    CPC分类号: G03F7/70675 G03F7/705

    摘要: A lithography simulation method of obtaining a resist image by a simulation using a first function and a second function, the lithography simulation method comprising: determining a mask transmission function from a mask layout, modulating the mask transmission function using the first function to determine a modulated mask transmission function, obtaining an optical image of the mask layout using the modulated mask transmission function, and applying the second function to the optical image to obtain the resist image of the mask layout.

    摘要翻译: 一种通过使用第一函数和第二函数的模拟获得抗蚀剂图像的光刻模拟方法,所述光刻模拟方法包括:从掩模布局确定掩模传输函数,使用所述第一函数调制所述掩模传输函数,以确定调制 掩模传送功能,使用调制掩模传输功能获得掩模布局的光学图像,以及将第二功能应用于光学图像以获得掩模布局的抗蚀剂图像。

    Lithography simulation method, photomask manufacturing method, semiconductor device manufacturing method, and recording medium
    10.
    发明授权
    Lithography simulation method, photomask manufacturing method, semiconductor device manufacturing method, and recording medium 失效
    光刻模拟法,光掩模制造方法,半导体器件制造方法和记录介质

    公开(公告)号:US07784017B2

    公开(公告)日:2010-08-24

    申请号:US11783935

    申请日:2007-04-13

    IPC分类号: G06F17/50

    CPC分类号: G03F7/70666 G03F7/705

    摘要: A lithography simulation method includes obtaining a mask transmission function from a mask layout, obtaining an optical image of the mask layout by using the mask transmission function, obtaining a function which is filtered by applying a predetermined function filter to the mask transmission function, and correcting the optical image by using the filtered function.

    摘要翻译: 平版印刷模拟方法包括从掩模布局获得掩模传输功能,通过使用掩模传输功能获得掩模布局的光学图像,获得通过对掩模传输功能应用预定功能滤波器而被滤波的功能,以及校正 通过使用滤波功能的光学图像。