摘要:
A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
摘要:
A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.
摘要:
A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
摘要:
A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.
摘要:
A lithography simulation method of obtaining a resist image by simulation using first and second functions, obtaining the resist image by the simulation includes determining a mask transmission function from a mask layout, modulating the mask transmission function using the first function to determine a modulated mask transmission function, obtaining an optical image of the mask layout using the modulated mask transmission function, and applying the second function to the optical image to obtain the resist image of the mask layout.
摘要:
A method of making a simulation model, includes specifying a feature factor which characterizes a pattern layout of a mask pattern, specifying a control factor which affects a dimension of a resist pattern to be formed on a substrate by means of a lithography process using the mask pattern, determining a predicted dimension of the resist pattern to be formed on the substrate by means of the lithography process using the mask pattern through the use of a model based on the feature and control factors, obtaining an actual dimension of the resist pattern actually formed on the substrate by means of the lithography process using the mask pattern, and setting the feature and control factors and the predicted dimension as input layers and setting the actual dimension as an output layer to construct a neural network.
摘要:
The present invention provides a magnetic recording medium having high durability and excellent electromagnetic transfer characteristics and having a lower coating layer, which contains a binder and has high dispersion property and durability. The magnetic recording medium comprises a lower coating layer where non-magnetic powder or ferromagnetic power is dispersed in a binder and an upper magnetic layer where ferromagnetic powder is dispersed in a binder, said two layers being placed on a non-magnetic support member, whereby the binder of the lower coating layer comprises polyurethane resin, which is a reaction product using diol and organic diisocyanate as major materials, the polyurethane resin contains short-chain diol having cyclic structure by 17 to 40 weight %, and the polyurethane resin contains long-chain diol, containing ether groups by 1.0 to 5.0 mmol/g to the entire polyurethane resin, by 10 to 50 weight %.
摘要:
A negative type silver halide photographic material is disclosed, which comprises a support having thereon at least one silver halide emulsion layer and at least one other hydrophilic colloidal layer, wherein at least one said silver halide emulsion layer or at least one said other hydrophilic colloidal layer contains a hydrazine derivative and a polyacrylamide derivative.
摘要:
A lithography simulation method of obtaining a resist image by a simulation using a first function and a second function, the lithography simulation method comprising: determining a mask transmission function from a mask layout, modulating the mask transmission function using the first function to determine a modulated mask transmission function, obtaining an optical image of the mask layout using the modulated mask transmission function, and applying the second function to the optical image to obtain the resist image of the mask layout.
摘要:
A lithography simulation method includes obtaining a mask transmission function from a mask layout, obtaining an optical image of the mask layout by using the mask transmission function, obtaining a function which is filtered by applying a predetermined function filter to the mask transmission function, and correcting the optical image by using the filtered function.