PIEZOELECTRIC MATERIAL
    25.
    发明申请
    PIEZOELECTRIC MATERIAL 有权
    压电材料

    公开(公告)号:US20090026408A1

    公开(公告)日:2009-01-29

    申请号:US12135980

    申请日:2008-06-09

    IPC分类号: H01L41/187

    CPC分类号: H01L41/1871 H01L41/43

    摘要: The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)O3 and A(2)B(2)O3 different from each other in crystalline phase, the oxide being represented by the following general formula (1): X{A(1)B(1)O3}−(1−X){A(2)B(2)O3}  (1) wherein “A(1)” and “A(2)” are each an element including an alkali earth metal and may be the same or different from each other; “B(1)” and “B(2)” each include two or more metal elements, and either one of “B(1)” and “B(2)” contains Cu in a content of 3 atm % or more; and “X” satisfies the relation 0

    摘要翻译: 本发明提供一种甚至可以应用于MEMS技术的压电材料,即使在高环境温度下也表现出令人满意的压电性,并且是环境清洁的,即包括通过形成由两种钙钛矿氧化物A形成的固溶体获得的氧化物的压电材料 (1)在结晶相中彼此不同的B(1)O 3和A(2)B(2)O 3,所述氧化物由以下通式(1)表示:<?in-line-formula description =“In (1)B(1)O3} - (1-X){A(2)B(2)O3}(1)<?在线公式 description =“In-line Formulas”end =“tail”?>其中“A(1)”和“A(2)”分别是包含碱土金属的元素,可以相同或不同; “B(1)”和“B(2)”各自包含两个或更多个金属元素,“B(1)”和“B(2)”中的任一个含有3atm%以上的Cu; 和“X”满足0

    Piezoelectric element, ink jet head and producing method for piezoelectric element
    27.
    发明授权
    Piezoelectric element, ink jet head and producing method for piezoelectric element 有权
    压电元件,喷墨头和压电元件的制造方法

    公开(公告)号:US08033654B2

    公开(公告)日:2011-10-11

    申请号:US12893726

    申请日:2010-09-29

    IPC分类号: B41J2/045

    摘要: A piezoelectric element includes a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

    摘要翻译: 压电元件包括​​设置在基板上的压电膜和与压电膜接触设置并利用弯曲模式的一对电极。 该压电薄膜包括由四方晶体构成的并由具有与压电薄膜的膜表面平行的(100)面的晶体形成的a畴的a畴,a畴包括具有正常 基本上平行于压电薄膜的主弯曲方向的(001)面的轴线和与压电薄膜的主弯曲方向垂直的法线轴(001)面的B域,A畴具有 体积比例大于50体积%,相对于A结构域的体积和B结构域的体积的总和。

    PIEZOELECTRIC ELEMENT, INK JET HEAD AND PRODUCING METHOD FOR PIEZOELECTRIC ELEMENT
    28.
    发明申请
    PIEZOELECTRIC ELEMENT, INK JET HEAD AND PRODUCING METHOD FOR PIEZOELECTRIC ELEMENT 有权
    压电元件,喷墨头和压电元件的生产方法

    公开(公告)号:US20110018945A1

    公开(公告)日:2011-01-27

    申请号:US12893726

    申请日:2010-09-29

    IPC分类号: B41J2/045 H01L41/00 H01L41/22

    摘要: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

    摘要翻译: 压电元件包括​​设置在基板上的压电膜和与压电膜接触设置并利用弯曲模式的一对电极。 该压电薄膜包括由四方晶体构成的并由具有与压电薄膜的膜表面平行的(100)面的晶体形成的a畴的a畴,A畴包括具有正常的 基本上平行于压电薄膜的主弯曲方向的(001)面的轴线和与压电薄膜的主弯曲方向垂直的法线轴(001)面的B域,A畴具有 体积比例大于50体积%,相对于A结构域的体积和B结构域的体积的总和。