摘要:
Disclosed is a pharmaceutical composition containing p-aminobenzoic acid-N-D-xyloside or a pharmaceutically a acceptable salt thereof as an active ingredient.
摘要:
Disclosed is a method for the treatment of hyperglycemia, hyperlipemia, inflammatory diseases, pains due to the accentuation of central nerve, pyrexia due to the accentuation of central nerve or tumor, which comprises administering to a patient suffering therefrom a pharmaceutically effective amount of p-aminobenzoic acid-N-L-rhamnoside or a pharmaceutically acceptable salt thereof.
摘要:
Disclosed is a pharmaceutical composition in dosage unit form which comprises a dosage effective for the treatment of myodystrophia of a compound of 24,25-dihydroxycholecalciferol and a pharmaceutical acceptable carrier or diluent therefor.
摘要:
Disclosed is a pharmaceutical composition containing an aminobenzoic acid derivative as an active ingredient represented by the following general formula: ##STR1## wherein .sup.1 R denotes one member selected from the group consisting of the residual groups formed by removing OH at 1(alpha) or 1(beta) position from arabinose, xylose, glucose, galactose, rhamnose and mannose, and .sup.2 R denotes hydrogen or methyl group, or a pharmaceutically acceptable salt thereof.
摘要:
The novel derivatives of saccharide obtained by bringing a saccharide into reaction with an ester of aminobenzoic acid, an aminobenzoic acid amide, an aminophenylacetic acid or an ester thereof have various physiological activities.
摘要:
Disclosed is a pharmaceutical composition containing p-aminobenzoic acid-N-D-xyloside or a pharmaceutically acceptable salt thereof as an active ingredient.
摘要:
Disclosed is a pharmaceutical composition containing p-aminobenzoic acid-N-L-rhamnoside or a pharmaceutically acceptable salt thereof as an active ingredient.
摘要:
In accordance with an embodiment, a pattern inspection apparatus includes a stage supporting a substrate with a pattern, a light source irradiating the substrate with light, a detection unit, an optical system, a focus position change unit, a control unit, and a determination unit. The detection unit detects reflected light from the substrate. The optical system leads the light from the light source to the substrate and leads the reflected light to the detection unit. The focus position change unit changes a focus position of the light to the substrate in a direction vertical to the surface of the substrate. The control unit associates the movement of the stage with the light irradiation and controls the stage drive unit and the focus position change unit, thereby changing the focus position. The determination unit determines presence/absence of a defect of the pattern based on the signal from the determination unit.
摘要:
According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.
摘要:
According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.