PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD
    28.
    发明申请
    PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD 审中-公开
    图案检查装置和图案检查方法

    公开(公告)号:US20120242985A1

    公开(公告)日:2012-09-27

    申请号:US13418940

    申请日:2012-03-13

    IPC分类号: G01N21/55

    CPC分类号: G01N21/9501 G01N21/95607

    摘要: In accordance with an embodiment, a pattern inspection apparatus includes a stage supporting a substrate with a pattern, a light source irradiating the substrate with light, a detection unit, an optical system, a focus position change unit, a control unit, and a determination unit. The detection unit detects reflected light from the substrate. The optical system leads the light from the light source to the substrate and leads the reflected light to the detection unit. The focus position change unit changes a focus position of the light to the substrate in a direction vertical to the surface of the substrate. The control unit associates the movement of the stage with the light irradiation and controls the stage drive unit and the focus position change unit, thereby changing the focus position. The determination unit determines presence/absence of a defect of the pattern based on the signal from the determination unit.

    摘要翻译: 根据一个实施例,图案检查装置包括支撑具有图案的基板的台,用光照射基板的光源,检测单元,光学系统,聚焦位置改变单元,控制单元和确定 单元。 检测单元检测来自基板的反射光。 光学系统将来自光源的光引导到基板,并将反射光引导到检测单元。 聚焦位置改变单元将垂直于基底表面的方向的光的聚焦位置改变为基底。 控制单元使舞台的移动与光照射相关联,并且控制舞台驱动单元和对焦位置改变单元,从而改变对焦位置。 确定单元基于来自确定单元的信号来确定模式的缺陷的存在/不存在。

    Semiconductor light-emitting device
    29.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号:US08242532B2

    公开(公告)日:2012-08-14

    申请号:US12873753

    申请日:2010-09-01

    IPC分类号: H01L33/26

    CPC分类号: H01L33/20 H01L33/46

    摘要: According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

    摘要翻译: 根据一个实施例,提供了具有高光提取效率的半导体发光器件。 半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层,其形成在所述透光性基板的底面上,折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。 并且透光基板和电介质层之间的界面是不平坦的面,并且介电层和金属层之间的界面是平坦的面。

    Semiconductor light-emitting device

    公开(公告)号:US08188510B2

    公开(公告)日:2012-05-29

    申请号:US12873753

    申请日:2010-09-01

    IPC分类号: H01L33/26

    摘要: According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.