公开(公告)号：US6060747A

公开(公告)日：2000-05-09

申请号：US159122

申请日：1998-09-23

申请人： Hideki Okumura ,  Akihiko Osawa ,  Yoshiro Baba ,  Noboru Matsuda ,  Masanobu Tsuchitani

发明人： Hideki Okumura ,  Akihiko Osawa ,  Yoshiro Baba ,  Noboru Matsuda ,  Masanobu Tsuchitani

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/739

CPC分类号： H01L29/0696

摘要： A semiconductor device is characterized in that source electrode contact regions, each of which is formed of a first conductivity type source layer and a second conductivity type base layer in a surface of a semiconductor surface, are formed at respective intersectional points of a diagonally-arranged lattice, and in that a trench having a gate electrode buried therein is formed so as to snake through the contact regions alternately. By virtue of the structure, the trench arrangement and source/base simultaneous contact quality are improved, to thereby increase a trench density (channel density) per unit area.

摘要翻译： 半导体器件的特征在于，在对角线布置的各个交点处形成源极电极接触区域，每个源极电极接触区域由半导体表面的第一导电型源极层和第二导电型基极层形成， 并且具有埋入其中的具有栅电极的沟槽形成为交替地穿过接触区域。 通过该结构，提高了沟槽布置和源极/基极同时接触质量，从而增加了每单位面积的沟槽密度（沟道密度）。

公开(公告)号：US08015704B2

公开(公告)日：2011-09-13

申请号：US11667066

申请日：2005-11-25

申请人： Masaki Kawamura ,  Hideki Okumura

发明人： Masaki Kawamura ,  Hideki Okumura

IPC分类号： B21D53/84

CPC分类号： F16C7/023 ,  B23D31/003 ,  B23Q11/0046 ,  F16C9/045 ,  F16C2322/39 ,  Y10S29/046 ,  Y10T29/49288 ,  Y10T29/49796 ,  Y10T29/49822 ,  Y10T29/53535

摘要： A method and a device for removing the chips of a connecting rod. The large end part of the connecting rod is placed on the step part of a pedestal, and the small end part thereof is placed on a pedestal formed of a vibration damping material. An air vibrator is energized to continuously supply compressed air to vibrate the large end part together with the pedestal until the vibrated large end part is brought into contact with a contact plate member. When chips fall from the rod body and the cap part of the connecting rod, the chips are collected to a transparent collection bag through a suction hose by a dust collector. The operations above are performed in a sound isolation box closed by a cover member. Then, the chips are separated from the broken-out sections of the rod body and the cap part by using, for example, a brush.

摘要翻译： 一种用于去除连杆的芯片的方法和装置。 连杆的大端部被放置在基座的台阶上，其小端部被放置在由减振材料形成的基座上。 空气振动器被通电以连续地供应压缩空气，以使大端部与基座一起振动，直到振动的大端部与接触板构件接触。 当碎片从杆体和连杆的盖部分落下时，碎屑通过抽吸软管被集尘器收集到透明收集袋中。 上述操作在由盖构件封闭的隔音箱中进行。 然后，通过使用例如电刷将芯片与棒体和帽部的断开部分分离。

公开(公告)号：US20090250859A1

公开(公告)日：2009-10-08

申请号：US12084544

申请日：2006-11-08

申请人： Hideki Okumura ,  Tsuguo Koguchi ,  Masao Kumagai ,  Tomoyuki Shiga ,  Yuukou Hashimoto ,  Yoshiaki Yanata

发明人： Hideki Okumura ,  Tsuguo Koguchi ,  Masao Kumagai ,  Tomoyuki Shiga ,  Yuukou Hashimoto ,  Yoshiaki Yanata

IPC分类号： B25B1/22 ,  B21D53/84

CPC分类号： B23D31/003 ,  B23P2700/04 ,  F16C9/045 ,  Y10T29/49288

摘要： A device for manufacturing a connecting rod comprises a fixed stage secured onto a base, a movable stage so installed as to be move close to and apart from the fixed stage, and a set of backup cylinders displacing the overall movable stage along the axial direction of the connecting rod. The set of backup cylinders are substantially simultaneously biased to displace a cap part together with the movable stage until the fractured surface of the cap part of the connecting rod abuts on the fractured surface of the rod part of the connecting rod held on the fixed stage. Consequently, the removal and release of chips produced on the mating fractured surfaces can be promoted.

摘要翻译： 用于制造连杆的装置包括固定在基座上的固定台，安装成能够靠近和远离固定台移动的可移动台，以及一组备用气缸，沿着轴向方向 连杆。 支撑筒的组合基本上同时被偏置以与可移动台一起移位盖部分，直到连杆的盖部分的断裂表面与保持在固定平台上的连杆的杆部分的断裂表面相接触。 因此，可以促进在配合的断裂表面上产生的切屑的去除和释放。

公开(公告)号：US20080209708A1

公开(公告)日：2008-09-04

申请号：US11667066

申请日：2005-11-25

申请人： Masaki Kawamura ,  Hideki Okumura

发明人： Masaki Kawamura ,  Hideki Okumura

IPC分类号： B23P19/00

CPC分类号： F16C7/023 ,  B23D31/003 ,  B23Q11/0046 ,  F16C9/045 ,  F16C2322/39 ,  Y10S29/046 ,  Y10T29/49288 ,  Y10T29/49796 ,  Y10T29/49822 ,  Y10T29/53535

摘要： A method and a device for removing the chips of a connecting rod. The large end part of the connecting rod is placed on the step part of a pedestal, and the small end part thereof is placed on a pedestal formed of a vibration damping material. An air vibrator is energized to continuously supply compressed air to vibrate the large end part together with the pedestal until the vibrated large end part is brought into contact with a contact plate member. When chips fall from the rod body and the cap part of the connecting rod, the chips are collected to a transparent collection bag through a suction hose by a dust collector. The operations above are performed in a sound isolation box closed by a cover member. Then, the chips are separated from the broken-out sections of the rod body and the cap part by using, for example, a brush.

摘要翻译： 一种用于去除连杆的芯片的方法和装置。 连杆的大端部被放置在基座的台阶上，其小端部被放置在由减振材料形成的基座上。 空气振动器被通电以连续地供应压缩空气，以使大端部与基座一起振动，直到振动的大端部与接触板构件接触。 当碎片从杆体和连杆的盖部分落下时，碎屑通过抽吸软管被集尘器收集到透明收集袋中。 上述操作在由盖构件封闭的隔音箱中进行。 然后，通过使用例如电刷将芯片与棒体和帽部的断开部分分离。

公开(公告)号：US20060108600A1

公开(公告)日：2006-05-25

申请号：US11265208

申请日：2005-11-03

申请人： Hideki Okumura ,  Hitoshi Kobayashi ,  Masanobu Tsuchitani ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa ,  Satoshi Taji ,  Kenichi Tokano

发明人： Hideki Okumura ,  Hitoshi Kobayashi ,  Masanobu Tsuchitani ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa ,  Satoshi Taji ,  Kenichi Tokano

IPC分类号： H01L29/423

CPC分类号： H01L29/66712 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/7811

摘要： The present application provides a semiconductor device including a first-conductivity type semiconductor substrate, a pillar structure portion formed on the first-conductivity type semiconductor substrate and formed of five semiconductor pillar layers arranged in one direction parallel to a main surface of the first-conductivity type semiconductor substrate, and isolation insulating portions formed on the first-conductivity type semiconductor substrate and sandwiching the pillar structure portion between the isolation insulating portions, wherein the pillar structure portion is formed of a first first-conductivity type pillar layer, a second first-conductivity type pillar layer and a third first-conductivity type pillar layer which sandwich the first first-conductivity type pillar layer, a first second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the second first-conductivity type pillar layer, and a second second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the third first-conductivity type pillar layer.

摘要翻译： 本申请提供了一种半导体器件，其包括第一导电型半导体衬底，形成在第一导电型半导体衬底上的柱结构部分，并且由平行于第一导电型主要表面的一个方向排列的五个半导体柱层 以及形成在第一导电型半导体基板上并将柱结构部分夹在隔离绝缘部分之间的隔离绝缘部分，其中柱结构部分由第一第一导电型柱层，第二第一导电型支柱层， 导电型柱层和夹着第一第一导电型柱层的第三第一导电型柱层，设置在第一第一导电型柱层和第二第一导电型柱之间的第一第二导电型柱层 层和第二第二导电类型 柱层，设置在第一第一导电型柱层和第三第一导电型柱层之间。

公开(公告)号：US20050129860A1

公开(公告)日：2005-06-16

申请号：US10480347

申请日：2003-04-02

申请人： Noriyasu Echigo ,  Hiroshi Satani ,  Hideki Okumura ,  Hisaaki Tachihara

发明人： Noriyasu Echigo ,  Hiroshi Satani ,  Hideki Okumura ,  Hisaaki Tachihara

IPC分类号： B05D7/24 ,  C23C14/12 ,  C23C14/24 ,  H01G4/14 ,  H01L51/52 ,  B05D3/02 ,  B05C5/00 ,  B05D1/02 ,  B67B7/00

CPC分类号： H01G4/145 ,  B05D1/60 ,  C23C14/12 ,  C23C14/246 ,  H01L51/5256

摘要： A liquid resin material stored in a resin material cup is sent to a supply tank under pressure through a primary side supply pipe by increasing the pressure in a pressure tank. The supply tank is provided with a piston that is displaced in accordance with the amount of the resin material in the supply tank, and the resin material is quantified by the stroke of the piston. The quantified resin material is sent to a heating member through an evaporation side supply pipe, is evaporated by heating, and condenses on a substrate. The resin material is quantified by filling the supply tank with the resin material temporarily, and only the filling resin material is sent to the heating member. Therefore, an evaporation amount becomes constant, and as a result, the thickness of a resin thin film is stabilized.

摘要翻译： 通过增加压力罐中的压力，将储存在树脂材料杯中的液态树脂材料通过初级侧供给管在压力下送入供给箱。 供应罐设有根据供应罐中的树脂材料量移动的活塞，并且树脂材料由活塞的行程量化。 定量树脂材料通过蒸发侧供应管送到加热件，通过加热蒸发，并在基材上冷凝。 树脂材料通过临时填充供给槽与树脂材料进行定量，仅将填充树脂材料送至加热部件。 因此，蒸发量变得恒定，结果树脂薄膜的厚度稳定。

公开(公告)号：US06578949B2

公开(公告)日：2003-06-17

申请号：US09950716

申请日：2001-09-13

申请人： Masaru Takahashi ,  Hitoshi Hayakawa ,  Kojiro IIzuka ,  Mitsugu Ota ,  Takashi Akase ,  Hideki Okumura

发明人： Masaru Takahashi ,  Hitoshi Hayakawa ,  Kojiro IIzuka ,  Mitsugu Ota ,  Takashi Akase ,  Hideki Okumura

IPC分类号： B41J2165

CPC分类号： B41J2/16547 ,  B41J2/16526 ,  B41J2/16532

摘要： A cap member (10) which is brought into contact with a nozzle forming surface of a recording head (15) to seal up the nozzle forming surface, and a wiping member (11) which may be brought into sliding contact with the nozzle forming surface of the recording head (15) are disposed on a cap holder (31). With progress of a cleaning operation in which ink is placed under a negative pressure, and sucked and discharged from the recording head, a cap retaining member (50) is moved upward and placed to a set state, whereby blocking the slanting and downward movement of the cap member (10). Then, the wiping member (11) located on the cap holder (31) slides on the nozzle forming surface to wipe the nozzle forming surface. To a flushing operation, the cap retaining member (50) is moved downward and placed to a reset state. In this state, the wiping member (11) does not slide on the nozzle forming surface.

公开(公告)号：US06265744B1

公开(公告)日：2001-07-24

申请号：US09304342

申请日：1999-05-04

申请人： Hideki Okumura

发明人： Hideki Okumura

IPC分类号： H01L2976

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7811

摘要： An electronic field reduction in a corner of a trench section of a semiconductor is achieved by forming a p-type base region in a source area of an n-type drain region, and both an n-type source region and a gate leading region are formed in a surface area of the p-type base region separately from each other. A trench section is formed in both the source region and gate leading region to reach the drain region. Polysilicon is formed in the trench section and on the surface of a semiconductor substrate with a gate insulation film interposed therebetween and then thermally treated. An interlayer insulation film is deposited on the entire surface of the semiconductor substrate, and then contact holes reaching the gate leading region and the source and base regions in the peripheral portion of the trench section in the source region are formed. A source/base electrode which contacts both the source and base regions through one of the contact holes is formed. A gate electrode is formed which contacts both the gate leading region and the polysilicon in the trench through the other contact hole.

摘要翻译： 通过在n型漏极区域的源区域中形成p型基极区域，并且n型源极区域和栅极引出区域都是在半导体的沟槽部分的拐角处的电场减小 形成在p型基底区域的表面区域中。 在源极区域和栅极引出区域中形成沟槽部分以到达漏极区域。 在沟槽部分和半导体衬底的表面上形成多晶硅，并在其间插入栅极绝缘膜，然后进行热处理。 在半导体衬底的整个表面上沉积层间绝缘膜，然后形成到达栅极引导区域的接触孔，并且形成源极区域中的沟槽部分的周边部分中的源极和基极区域。 形成通过一个接触孔接触源极和基极区域的源/底电极。 形成栅极电极，其通过另一个接触孔与沟槽中的栅极引出区域和多晶硅接触。

公开(公告)号：US5811179A

公开(公告)日：1998-09-22

申请号：US554281

申请日：1995-11-06

申请人： Kazunori Sakamoto ,  Hideo Hatanaka ,  Yasuhiro Ueyama ,  Kiyoshi Kobata ,  Kazunori Kubota ,  Hideki Okumura

发明人： Kazunori Sakamoto ,  Hideo Hatanaka ,  Yasuhiro Ueyama ,  Kiyoshi Kobata ,  Kazunori Kubota ,  Hideki Okumura

IPC分类号： G11B5/708

CPC分类号： G11B5/708 ,  Y10S428/90 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/257 ,  Y10T428/26

摘要： A magnetic recording medium including a non-magnetic polymeric support and a magnetic layer on the non-magnetic polymeric support. The magnetic layer is positioned to be in contact with a record/playback head and includes ferromagnetic powder, abrasive material and binder resin, with at least 40 parts by weight of the abrasive material per 100 parts by weight of the ferromagnetic powder. The ferromagnetic powder has a saturation magnetization .sigma.s of 80 emu/g or more and long axis length of 0.25 .mu.m or less.

摘要翻译： 包括非磁性聚合物载体和在非磁性聚合物载体上的磁性层的磁记录介质。 磁性层定位成与记录/回放头接触，并且包括铁磁粉末，研磨材料和粘合剂树脂，每100重量份铁磁粉末至少40重量份的研磨材料。 铁磁粉末的饱和磁化σs为80emu / g以上，长轴长度为0.25μm以下。

公开(公告)号：US08890237B2

公开(公告)日：2014-11-18

申请号：US13419396

申请日：2012-03-13

申请人： Takahiro Kawano ,  Hideki Okumura

发明人： Takahiro Kawano ,  Hideki Okumura

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L23/48

CPC分类号： H01L23/48 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/407 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor device according to one embodiment includes a first electrode, a semiconductor substrate provided on the first electrode, and an insulating member. A terminal trench is made in the upper surface of the semiconductor substrate in a region including a boundary between a cell region and a terminal region. The semiconductor substrate includes a first portion of a first conductivity type and connected to the first electrode, a second portion of the first conductivity type, a third portion of a second conductivity type provided on the second portion in the cell region and connected to the second electrode, and a fourth portion of the first conductivity type selectively provided on the third portion and connected to the second electrode. The insulating member is disposed between the third portion and the second portion in a direction from the cell region toward the terminal region.

摘要翻译： 根据一个实施例的功率半导体器件包括第一电极，设置在第一电极上的半导体衬底和绝缘构件。 在包括单元区域和端子区域之间的边界的区域中，在半导体衬底的上表面中形成端子沟槽。 半导体衬底包括第一导电类型的第一部分并连接到第一电极，第一导电类型的第二部分，第二导电类型的第三部分，设置在电池区域的第二部分上，并连接到第二导电类型的第二部分 电极，以及选择性地设置在第三部分上并连接到第二电极的第一导电类型的第四部分。 绝缘构件在从单元区域朝向端子区域的方向上配置在第三部分和第二部分之间。